IE940533A1 - Method for producing cubic boron nitride - Google Patents
Method for producing cubic boron nitrideInfo
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- IE940533A1 IE940533A1 IE940533A IE940533A IE940533A1 IE 940533 A1 IE940533 A1 IE 940533A1 IE 940533 A IE940533 A IE 940533A IE 940533 A IE940533 A IE 940533A IE 940533 A1 IE940533 A1 IE 940533A1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
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- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
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Abstract
hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides and imides of metal elements from Groups Ia and IIa, or in its copresence with at least one metal selected from elements of Groups Ia, IIa, IIIa, VIa, VIIa, VIII, IIb and IIIb.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an improved method of synthesizing cubic boron nitride from hexagonal boron nitride.
2. Description of the Related Art
Cubic boron nitride is second only to diamond in hardness while having greater chemical stability, and therefore it is becoming increasingly more important as a grinding, polishing and cutting material. A variety of methods have been proposed for producing cubic boron nitride, but the most well-known of these, which is widely used industrially, is a method of converting hexagonal boron nitride to cubic boron nitride under high-temperature, high-pressure conditions of about 5.5 GPa, 1600°C, in the presence of a solvent (catalyst).
The well-known solvents (catalysts) for this method have conventionally been nitrides and boronitrides of alkali metals and alkaline earth metals. Of these, lithium-type solvents (catalysts) have been thoroughly studied, and lithium nitride and lithium boronitride are considered to be particularly effective solvents (catalysts) (see, for example, U.S. Patent No. 3,772,428).
Nevertheless, use of the above mentioned solvents (catalysts) does not provide sufficient yields, and consequently the above methods have not been satisfactory from an industrial point of view.
It is an object of the present invention, in light of these circumstances, to provide a method of converting hexagonal boron nitride to cubic boron nitride at a high conversion rate.
DISCLOSURE OF THE INVENTION
In order to achieve the above mentioned object, the present invention provides a method for producing cubic
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SECTION 28 AND RULE 23
JNL. tio /TN'.........OF , boron nitride which is characterized by keeping hexagonal boron nitride under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of one or more compounds selected from amides and imides of elements from Groups Ia and Ila of the Periodic Table, or in the presence both of one or more compounds selected from amides and imides of elements from Groups Ia and Ila of the Periodic Table and of one or more metals selected from elements of Groups Ia, Ila, Ilia, Via, Vila, VIII, lib and Illb of the Periodic Table, to convert the same to cubic boron nitride .
The hexagonal boron nitride to be used as the starting material may be commercially available hexagonal boron nitride (hBN) powder. Contaminant oxygen impurities in the form of boron oxide, etc. slow the conversion from hBN to cubic boron nitride (cBN), and thus materials with low oxygen contents are preferred.
The granularity thereof is not particularly restricted, but generally 150 mesh or lower is suitable. This is because too great a granularity may result in a lower reactivity with the solvent (catalyst).
The present invention is characterized in that the conversion from hBN to cBN is performed in the presence of at least one compound selected from amides and imides of Group Ia and Ila elements, or in the presence of both at least one compound selected from amides and imides of Group Ia and Ila elements and one or more metals selected from elements of Group Ia, Ila, Ilia, Via, Vila, VIII, lib and Illb elements. It has been found that performing the conversion in the presence of these compounds alone or together with the metals results in a dramatic improvement in the conversion rate over the method of the prior art. It is generally believed that the hBN reacts with alkali metals, alkaline earth metals or their compounds, functioning as a solvent, or catalyst, to promote the reaction to cBN, and it is likewise believed that the amide or imide compound or its combination with the above metals according to the present invention also functions in the same manner as a solvent or catalyst.
According to the present invention, the Periodic Table is the long period type, and the elements in each Group are considered to be the following.
Ia: Li, Na, K, Rb, Cs, Fr Ila: Be, Mg, Ca, Sr, Ba, Ra Ilia: Sc, Y, lanthanoids (atomic numbers 57-71), actinoids (atomic numbers 89-103) Via: Cr, Mo, w Vila: Mn, Tc, Re VIII: Fe, Co, Ni , Ru, Rh, Pd, Os, Ir, Pt lib: Zn, Cd, Hg 111b: B, Al, Ga , In, Tl Both the amide or imide of a Group la or Ila element (hereunder referred to as simply amide or imide) and
the metal selected from Group Ia, Ila, Ilia, Via, Vila, VIII, lib and lib elements preferably contain few oxygen impurities, as in the case of the hBN starting material, and usually powder of 150 mesh or lower is used.
The amount of the amide or imide, or the amide or imide and a metal, to be used is such that the total number of metal atoms making up the additive (the amide or imide, or the amide or imide and a metal) is 2 parts or more, and preferably 5-50 parts, to 100 parts by the number of boron atoms making up the hBN. If the amount of the additive is less than 2 parts, a long time will be required to obtain a sufficient conversion rate. On the other hand, since there is no improvement in the conversion rate even at greater than 50 parts, it is not economical, and therefore neither situation is preferred.
If one or more compounds selected from amides or imides of Group Ia and Ila elements are combined with one or more metals selected from Group Ia, Ila, Ilia, Via, Vila, VIII, lib and 111b elements, they may be used in any desired proportion, but the atomic ratio of the metal elements is preferably between 95:5 and 5:95. Outside of this range, the effect of the simultaneous addition of the above mentioned compounds and metals will not be sufficiently exhibited, and as a result it will be difficult to achieve a sufficiently high conversion rate.
Furthermore, when an amide or imide is used in combination with a metal, it is possible to obtain cBN at a higher conversion rate than when an amide or imide is used alone, even at lower temperature and pressure.
As a preferred mode of combining the above mentioned additives with the hexagonal boron nitride, their powders may be mixed together, but layers of the hexagonal boron nitride and the additives may also be arranged for alternate lamination in a reaction container.
Actually, the hBN and the amide or imide, or the amide or imide and a metal, are preferably compacted at about 1-2 t/cm pressure, either separately or after being filled into the reaction container. This will have an effect of improving the handleability of the crude powders while increasing the productivity by reducing the amount of shrinkage in the reaction container.
The reaction container may be a high-temperature, high-pressure generator capable of maintaining crude powders (hBN and additives) or their compacts, etc. under conditions of temperature and pressure in the range of stability of cBN. This range of stability (temperature and pressure) is reported in P. Bundy, R.H. Wentorf, J. Chem. Phys. 38(5), pp.1144-1149, (1963), and in most cases a minimum temperature and pressure of 1100°C and 3.8 GPa are effective; however, this will vary depending on the types and combination of the additives (solvent, catalyst), and conversion to cBN is also possible at lower than 1100°C, 3.8 GPa. The retention time is not particularly limited and should be enough to allow the desired conversion rate to be attained, but in most cases it is from about one second to 6 hours.
The hBN is converted to cBN by being kept in the above mentioned stability range, and if the temperature and pressure conditions are extremely high a near 100% conversion rate may be attained; however, usually a composite lump consisting of a mixture of hBN and cBN is obtained.
The composite lump is crushed to isolate the cBN.
The method used for the isolation may be the one described in Japanese Examined Patent Publication (Kokoku) No. 49-27757, wherein, for example, the composite lump is crushed to a size of 5 mm or smaller, preferably 1 mm or smaller, after which sodium hydroxide and a small amount of water are added thereto and heating is effected to about 300°C to selectively dissolve the hBN, and thus upon cooling, acid cleaning and filtration the cBN is obtained. Also, in the case of residue of a metal used as an additive, it may be removed using hydrochloric acid, nitric acid or the like.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 shows a sectional view of a reaction container used for converting hBN to cBN in the Examples.
EXAMPLE
Example 1
Lithium amide was added to hexagonal boron nitride with a granularity of 150 mesh or lower and containing, as impurities, 0.8 wt% of oxygen and 0.2 wt% of a metal impurity other than an alkali metal or alkaline earth metal, at an atomic ratio of 20 parts lithium to 100 parts of the boron atoms in the compound. This mixture was subjected to 1.5 ton/cm pressure to make a 26 mm x 32 mmh compact, which was kept in the reaction container shown in Fig. 1.
In the reaction container shown in Fig. 1, the outer wall 1 of the container is made of pyrophyllite as a pressure conveyor, into a cylindrical shape, while the inner side thereof is provided with a heater 2 consisting of a graphite cylinder and pyrophyllite 8 as a partitioning material. Also, the top and bottom ends of the container are each provided with a conducting steel ring 3 and a conducting steel plate 4, while the inner sides thereof are provided with a sintered alumina plate 5 and pyrophyllite 6 as a pressure conveyor, and the space surrounded by this pyrophyllite 6 and the pyrophyllite 8 as a partitioning material is used as the holding compartment 7 for holding the raw materials for the reaction.
The above mentioned compact was treated for 10 minutes in this reaction container, under conditions of
4.5 GPa and 1400°C.
The specimen was crushed in a mortar, and an X-ray powder diffraction instrument was used to determine the conversion rate to cubic boron nitride from the intensity ratio of the diffracted rays of the cubic boron nitride (111) and the hexagonal boron nitride (002) with respect to CuK α-rays, and the conversion rate was found to be 84% .
The cubic boron nitride may be isolated (purified) by adding sodium hydroxide and a small amount of water to the specimen prepared by crushing to about 1 mm or less in a mortar or the like, heating it to 300°C, following this with cooling, cleaning with distilled water and hydrochloric acid and filtration, and then drying the filtered residue.
Example 2
Magnesium amide was added to hexagonal boron nitride at an atomic ratio of 20 parts magnesium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 88%.
Example 3
Calcium amide was added to hexagonal boron nitride at an atomic ratio of 20 parts calcium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 82%.
Example 4
Lithium imide was added to hexagonal boron nitride at an atomic ratio of 20 parts lithium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 83%.
Example 5
Magnesium imide was added to hexagonal boron nitride at an atomic ratio of 20 parts magnesium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 85%.
Example 6
Calcium imide was added to hexagonal boron nitride at an atomic ratio of 20 parts calcium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 85%.
Example 7
Lithium amide and magnesium amide were added to hexagonal boron nitride at an atomic ratio of 10 parts each of lithium and magnesium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 93%.
Comparison 1
Lithium nitride was added to hexagonal boron nitride at an atomic ratio of 20 parts lithium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 7%.
Comparison 2
Lithium boronitride was added to hexagonal boron nitride at an atomic ratio of 20 parts lithium to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 14%.
Comparison 3
Magnesium was added to hexagonal boron nitride at an atomic ratio of 20 parts to 100 parts of the boron atoms in the compound, to synthesize cubic boron nitride in the same manner as in Example 1, and upon evaluation the conversion rate to cubic boron nitride was found to be 54%.
Example 8
Hexagonal boron nitride containing, as impurities,
0.8 wt% of oxygen and 0.2 wt% of a metal impurity, was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and magnesium at an atomic ratio of 10 parts to 100 parts of the boron atoms 2 in the compound. This was subjected to 1.5 ton/cm pressure to make a 26 mm x 32 mmh compact, which was kept in the reaction container shown in Fig. 1, in the same manner as in Example 1.
The above mentioned compact was treated for 10 minutes in this reaction container, under conditions of 4.0 GPa and 1200°C.
The specimen was crushed in a mortar, and an X-ray powder diffractor was used to determine the conversion rate to cubic boron nitride from the intensity ratio of the diffracted rays of the cubic boron nitride (111) and the hexagonal boron nitride (002) with respect to CuK
Example 9
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and lithium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 73%.
Example 10
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and chromium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 80%.
Example 11
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and manganese at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 81%.
Example 12
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and iron at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 79%.
Example 13
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and cobalt at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 80%.
Example 14
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and nickel at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 88%.
Example 15
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and zinc at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 85%.
Example 16
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and aluminum at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 72%.
Example 17
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and lanthanum at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 76%.
Example 18
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and cerium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 77%.
Example 19
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and praseodymium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 78%.
Example 20
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and neodymium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 77%.
Example 21
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and samarium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 76%.
Example 22
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium and gadolinium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 76%.
Example 23
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium, magnesium at an atomic ratio of 10 parts and nickel at an atomic ratio of 5 parts, to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 95%.
Example 24
Hexagonal boron nitride was mixed with weighed out portions of lithium amide at an atomic ratio of 10 parts lithium, magnesium amide at an atomic ratio of 10 parts magnesium and manganese at an atomic ratio of 5 parts, to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 86%.
Example 25
Hexagonal boron nitride was mixed with weighed out portions of lithium imide at an atomic ratio of 10 parts lithium and magnesium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 74%.
Comparison 4
Hexagonal boron nitride was mixed with a weighed out portion of lithium nitride at an atomic ratio of 10 parts lithium to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 0%.
Comparison 5
Hexagonal boron nitride was mixed with a weighed out portion of lithium boronitride at an atomic ratio of 10 parts lithium to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 0%.
Comparison 6
Hexagonal boron nitride was mixed with a weighed out portion of magnesium at an atomic ratio of 10 parts to 100 parts of the boron atoms in the compound. This was used to synthesize cubic boron nitride in the same manner 10 as in Example 8, and upon evaluation the conversion rate to cubic boron nitride was found to be 0%.
According to the present invention, it is possible to considerably improve the conversion rate in methods of synthesizing cubic boron nitride using hexagonal boron nitride as the starting material.
Claims (12)
1. A method for producing cubic boron nitride, characterized by keeping hexagonal boron nitride under temperature and pressure conditions within the range of stability of cubic boron nitride in the presence of one or more compounds selected from amides and imides of elements from Groups Ia and Ila of the Periodic Table, to convert it to cubic boron nitride.
2. A method according to claim 1, wherein said one or more compounds of amides and imides are used such that the total number of metal atoms making up the compounds is 2 parts or more to 100 parts of the number of boron making up the hexagonal boron nitride.
3. A method according to claim 2, wherein said one or more compounds of amides and imides of the metals are used such that the total number of the metal atoms making up the compounds is 5 to 50 parts to 100 parts of the number of boron atoms making up the hexagonal boron nitride.
4. A method according to claim 1, wherein said region of stability of cubic boron nitride is selected to have a temperature of 1100°C or higher and a pressure of 3.8 GPa or higher.
5. A method according to claim 1, wherein the converted cubic boron nitride is crushed, after which sodium hydroxide and water are added thereto and heating is effected to selectively dissolve the hexagonal boron nitride, and then cooling, acid cleaning and filtration are conducted, so as to isolate the cubic boron nitride.
6. A method for producing cubic boron nitride, characterized by keeping hexagonal boron nitride under temperature and pressure conditions within the range of stability of cubic boron nitride in the presence both of one or more compounds selected from amides and imides of elements from Groups Ia and Ila of the Periodic Table and of one or more metals selected from elements of Groups la, Ila, Ilia, Via, Vila, VIII, lib and Illb of the Periodic Table, to convert it to cubic boron nitride.
7. A method according to claim 6, wherein said one or more compounds of amides and imides of elements from Groups Ia, Ila and said one or more metals from Groups Ia, Ila, Ilia, Via, Vila, VIII, lib and Illb are used such that the total number of the metal atoms making up the compounds and the latter metals is 2 parts or more to 100 parts of the number of boron making up the hexagonal boron nitride.
8. A method according to claim 7, wherein said one or more compounds of amides and imides of elements from Groups Ia and Ila and said one or more metals from Groups Ia, Ila, Ilia, Via, Vila, VIII, lib and Illb are used such that the total number of the metal atoms making up the compounds and the latter metals is 5 to 50 parts or more to 100 parts of the number of boron making up the hexagonal boron nitride.
9. A method according to claim 6, wherein said region of stability of cubic boron nitride is selected to have a temperature of 1100°C or higher and a pressure of 3.8 GPa or higher.
10. A method according to claim 6, wherein the converted cubic boron nitride is crushed, after which sodium hydroxide and water are added thereto and heating is effected to selectively dissolve the hexagonal boron nitride, and then cooling, acid cleaning and filtration are conducted, so as to isolate the cubic boron nitride.
11. A method according to claim 1 for producing cubic boron nitride, substantially as hereinbefore described and exemplified.
12. Cubic boron nitride whenever produced by a method claimed in a preceding claim.
Applications Claiming Priority (2)
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JP17053793 | 1993-07-09 | ||
JP01950894A JP3400842B2 (en) | 1993-07-09 | 1994-02-16 | Method for producing cubic boron nitride |
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IE940533A1 true IE940533A1 (en) | 1995-01-11 |
IE80824B1 IE80824B1 (en) | 1999-03-10 |
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JP (1) | JP3400842B2 (en) |
KR (1) | KR100351712B1 (en) |
DE (1) | DE4423987C2 (en) |
IE (1) | IE80824B1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3565615B2 (en) * | 1995-06-12 | 2004-09-15 | 昭和電工株式会社 | Method for producing cubic boron nitride |
JP3471167B2 (en) * | 1996-05-21 | 2003-11-25 | 昭和電工株式会社 | Method for producing cubic boron nitride |
JP4183317B2 (en) * | 1997-11-25 | 2008-11-19 | 昭和電工株式会社 | Method for producing cubic boron nitride |
KR100636415B1 (en) * | 1997-11-25 | 2006-12-28 | 쇼와 덴코 가부시키가이샤 | Manufacturing method of cubic boron nitride |
JP4155473B2 (en) * | 1998-02-27 | 2008-09-24 | モーメンティブ・パフォーマンス・マテリアルズ・インク | Method for producing high density boron nitride and high density agglomerated boron nitride particles |
JP4202521B2 (en) * | 1999-04-08 | 2008-12-24 | 昭和電工株式会社 | Method for producing cubic boron nitride |
JP4145533B2 (en) * | 2002-02-28 | 2008-09-03 | 昭和電工株式会社 | Method for producing cubic boron nitride |
US7244406B2 (en) | 2002-02-28 | 2007-07-17 | Showa Denko K.K. | Method for producing cubic boron nitride |
DE102011009834B4 (en) | 2011-01-31 | 2015-06-03 | Georg Vogt | Process for the preparation of cubic boron nitride |
CN115279519A (en) * | 2020-03-18 | 2022-11-01 | 住友电工硬质合金株式会社 | Composite sintered body and tool using the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2947617A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Abrasive material and preparation thereof |
NL302348A (en) * | 1963-01-17 | |||
SU674372A1 (en) * | 1977-07-05 | 1983-11-15 | Всесоюзный Научно-Исследовательский Институт Абразивов И Шлифования | Method for preparing cubical boron nitride |
-
1994
- 1994-02-16 JP JP01950894A patent/JP3400842B2/en not_active Expired - Lifetime
- 1994-06-30 IE IE940533A patent/IE80824B1/en not_active IP Right Cessation
- 1994-07-07 DE DE4423987A patent/DE4423987C2/en not_active Expired - Lifetime
- 1994-07-08 KR KR1019940016500A patent/KR100351712B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960013987A (en) | 1996-05-22 |
DE4423987A1 (en) | 1995-01-12 |
KR100351712B1 (en) | 2002-11-02 |
IE80824B1 (en) | 1999-03-10 |
JPH0768153A (en) | 1995-03-14 |
DE4423987C2 (en) | 1996-09-05 |
JP3400842B2 (en) | 2003-04-28 |
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