IE43560B1 - Hall effect device - Google Patents
Hall effect deviceInfo
- Publication number
- IE43560B1 IE43560B1 IE2361/76A IE236176A IE43560B1 IE 43560 B1 IE43560 B1 IE 43560B1 IE 2361/76 A IE2361/76 A IE 2361/76A IE 236176 A IE236176 A IE 236176A IE 43560 B1 IE43560 B1 IE 43560B1
- Authority
- IE
- Ireland
- Prior art keywords
- layer
- resistivity
- type
- substrate
- hall effect
- Prior art date
Links
- 230000005355 Hall effect Effects 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000002019 doping agent Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical group [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000219793 Trifolium Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB48355/75A GB1518957A (en) | 1975-11-25 | 1975-11-25 | Hall effect device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE43560L IE43560L (en) | 1977-05-25 |
| IE43560B1 true IE43560B1 (en) | 1981-03-25 |
Family
ID=10448322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE2361/76A IE43560B1 (en) | 1975-11-25 | 1976-10-26 | Hall effect device |
Country Status (9)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19857275A1 (de) * | 1998-12-11 | 2000-06-15 | Johannes V Kluge | Integrierbarer Magnetfeldsensor aus Halbleitermaterial |
| DE19908473B4 (de) * | 1999-02-26 | 2004-01-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hall-Sensor mit reduziertem Offset-Signal |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL158658B (nl) * | 1967-09-08 | 1978-11-15 | Philips Nv | Hall-element, alsmede collectorloze elektromotor waarin dit hall-element is toegepast. |
-
1975
- 1975-11-25 GB GB48355/75A patent/GB1518957A/en not_active Expired
-
1976
- 1976-10-13 ZA ZA766083A patent/ZA766083B/xx unknown
- 1976-10-26 IE IE2361/76A patent/IE43560B1/en unknown
- 1976-11-17 DE DE19762652322 patent/DE2652322A1/de not_active Withdrawn
- 1976-11-17 FR FR7634660A patent/FR2333354A1/fr not_active Withdrawn
- 1976-11-22 AU AU19861/76A patent/AU1986176A/en not_active Expired
- 1976-11-24 NL NL7613064A patent/NL7613064A/xx not_active Application Discontinuation
- 1976-11-24 ES ES453598A patent/ES453598A1/es not_active Expired
- 1976-11-25 CH CH1482776A patent/CH601919A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1518957A (en) | 1978-07-26 |
| ES453598A1 (es) | 1977-12-16 |
| ZA766083B (en) | 1977-10-26 |
| IE43560L (en) | 1977-05-25 |
| NL7613064A (nl) | 1977-05-27 |
| AU1986176A (en) | 1978-06-01 |
| FR2333354A1 (fr) | 1977-06-24 |
| DE2652322A1 (de) | 1977-06-02 |
| CH601919A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cook et al. | Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements | |
| US3878552A (en) | Bipolar integrated circuit and method | |
| GB1393123A (en) | Semiconductor device manufacture | |
| CN109996908B (zh) | 碳化硅半导体晶片、碳化硅半导体芯片及碳化硅半导体装置的制造方法 | |
| US3538399A (en) | Pn junction gated field effect transistor having buried layer of low resistivity | |
| US3659160A (en) | Integrated circuit process utilizing orientation dependent silicon etch | |
| GB1080177A (en) | Improved method of manufacturing planar transistors | |
| GB2061003A (en) | Zener diode | |
| GB1041836A (en) | Semiconductor devices | |
| US3869322A (en) | Automatic P-N junction formation during growth of a heterojunction | |
| US4032373A (en) | Method of manufacturing dielectrically isolated semiconductive device | |
| GB1559930A (en) | Temperature-compensated voltage reference diode | |
| IE43560B1 (en) | Hall effect device | |
| GB1277973A (en) | Semiconductor device | |
| KR970004850B1 (ko) | 광위치검출 반도체장치 | |
| JPS646547B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US3798753A (en) | Method for making bulk resistor and integrated circuit using the same | |
| EP0046257A1 (en) | Semiconductor device | |
| Patrick | Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer | |
| US4206468A (en) | Contacting structure on a semiconductor arrangement | |
| US3443167A (en) | Strain gage | |
| US3337780A (en) | Resistance oriented semiconductor strain gage with barrier isolated element | |
| US3443174A (en) | L-h junction lateral transistor | |
| SE500944C2 (sv) | Halvledaranordning med begravd resistans och förfarande för dess tillverkning | |
| JPH07193260A (ja) | ツェナーダイオード |