IE33320B1 - Voltage- controllable capacitor - Google Patents
Voltage- controllable capacitorInfo
- Publication number
- IE33320B1 IE33320B1 IE1300/69A IE130069A IE33320B1 IE 33320 B1 IE33320 B1 IE 33320B1 IE 1300/69 A IE1300/69 A IE 1300/69A IE 130069 A IE130069 A IE 130069A IE 33320 B1 IE33320 B1 IE 33320B1
- Authority
- IE
- Ireland
- Prior art keywords
- electrode
- junction
- layer
- insulation
- voltage
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76654668A | 1968-10-10 | 1968-10-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
IE33320L IE33320L (en) | 1970-04-10 |
IE33320B1 true IE33320B1 (en) | 1974-05-15 |
Family
ID=25076769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IE1300/69A IE33320B1 (en) | 1968-10-10 | 1969-09-16 | Voltage- controllable capacitor |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE740058A (enrdf_load_stackoverflow) |
DE (1) | DE1951242A1 (enrdf_load_stackoverflow) |
FR (1) | FR2020336B1 (enrdf_load_stackoverflow) |
GB (1) | GB1283383A (enrdf_load_stackoverflow) |
IE (1) | IE33320B1 (enrdf_load_stackoverflow) |
SE (1) | SE343426B (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3391282A (en) * | 1965-02-19 | 1968-07-02 | Fairchild Camera Instr Co | Variable length photodiode using an inversion plate |
FR1535286A (fr) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication |
FR1572934A (enrdf_load_stackoverflow) * | 1967-10-09 | 1969-06-27 |
-
1969
- 1969-09-16 IE IE1300/69A patent/IE33320B1/xx unknown
- 1969-09-26 GB GB47576/69A patent/GB1283383A/en not_active Expired
- 1969-10-09 BE BE740058D patent/BE740058A/xx unknown
- 1969-10-09 SE SE13885/69A patent/SE343426B/xx unknown
- 1969-10-10 FR FR6934705A patent/FR2020336B1/fr not_active Expired
- 1969-10-10 DE DE19691951242 patent/DE1951242A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2020336A1 (enrdf_load_stackoverflow) | 1970-07-10 |
IE33320L (en) | 1970-04-10 |
SE343426B (enrdf_load_stackoverflow) | 1972-03-06 |
DE1951242A1 (de) | 1970-05-27 |
FR2020336B1 (enrdf_load_stackoverflow) | 1974-02-01 |
GB1283383A (en) | 1972-07-26 |
BE740058A (enrdf_load_stackoverflow) | 1970-04-09 |
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