HUP9902355A2 - High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors - Google Patents

High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors

Info

Publication number
HUP9902355A2
HUP9902355A2 HU9902355A HUP9902355A HUP9902355A2 HU P9902355 A2 HUP9902355 A2 HU P9902355A2 HU 9902355 A HU9902355 A HU 9902355A HU P9902355 A HUP9902355 A HU P9902355A HU P9902355 A2 HUP9902355 A2 HU P9902355A2
Authority
HU
Hungary
Prior art keywords
microwave
semiconductor material
contact
charge carriers
circulator
Prior art date
Application number
HU9902355A
Other languages
Hungarian (hu)
Inventor
Tibor Pavelka
Original Assignee
SEMILAB Félvezető Fizikai Laboratórium Rt.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMILAB Félvezető Fizikai Laboratórium Rt. filed Critical SEMILAB Félvezető Fizikai Laboratórium Rt.
Priority to HU9902355A priority Critical patent/HUP9902355A2/en
Publication of HU9902355D0 publication Critical patent/HU9902355D0/en
Priority to PCT/HU2000/000077 priority patent/WO2001004610A2/en
Publication of HUP9902355A2 publication Critical patent/HUP9902355A2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials

Abstract

A találmány tárgya eljárás félvezetőkben lévő kisebbségitöltéshordozók rekombinációs élettartamának a mérésére oly módon, hogya félvezető anyagot (6) célszerűen megválasztott (a félvezető anyagtiltott sávjánál nagyobb energiájú) fényforrással impulzusszerűenmegvilágítják, és a félvezető anyagban (6) a mikrohullámú reflexiónaka fény hatására keletkező kisebbségi töltéshordozók által okozottváltozását az idő függvényében úgy detektálják, hogy a mikrohullámúvezetőt a vizsgálandó mintával közvetlen kontaktusba hozzák. Atalálmány lényege, hogy a mikrohullámot koaxiális kábelen avizsgálandó minta térfogat közvetlen közelébe vezetik és kontaktusrévén a mikrohullámot az anyagba becsatolják. Ezáltal a mikrohullámúreflexió a kontaktusmentes eljárásokhoz képest jelentősen kisebbtérrészből következik be. A mikrohullámú reflexió által érzékelttérfogat jellemzően a megvilágított, kb. 1 mm-es átmérőjű foltkörnyezetére szűkíthető. Ennek következtében a korábbi eljárásoknáljelentősen jobb érzékenység illetve jel/zaj viszony érhető el. Atalálmány szerinti berendezés tartalmaz egy varaktorral (1) hangolhatómikrohullámú jelgenerátort (2), amelynek kimenete egy izolátor (3)bemenetére van elvezetve, amelynek kimenete koaxiális kábelenkeresztül van egy cirkulátor (4) első kapujára csatlakoztatva. Acirkulátor (4) második kapuja szintén koaxiális kábelen keresztül vanegy érintkezőtűre (5) vezetve, míg a cirkulátor (4) harmadik kapujakoaxiális csatlakozón keresztül van egy detektorra (8), elvezetve. Azérintkezőtű (5) a mikrohullámú teret a félvezető anyagra (6) vezeti.Az érintkezőtű (5) a félvezető anyaggal (6) érintkezik, és a félvezetőanyag (6) képezi a mikrohullámú útvonal lezáró impedanciáját, és enneka változását mérik. ÓThe subject of the invention is a method for measuring the recombination lifetime of minority charge carriers in semiconductors in such a way that the semiconductor material (6) is pulsed with an appropriately chosen light source (with an energy higher than the band gap of the semiconductor material) and the changes in the microwave reflections in the semiconductor material (6) caused by the minority charge carriers produced under the influence of light as a function of time, it is detected by bringing the microwave guide into direct contact with the sample to be tested. The essence of the invention is that the microwave is guided on a coaxial cable in the immediate vicinity of the sample volume to be examined and the microwave is attached to the material via a contact patch. As a result, the microwave reflection takes place in a significantly smaller area compared to non-contact procedures. The volume sensed by microwave reflection is typically the illuminated, approx. It can be narrowed down to a spot area of 1 mm in diameter. As a result, significantly better sensitivity and signal/noise ratio can be achieved than in previous procedures. The device according to the invention includes a tunable microwave signal generator (2) with a varactor (1), the output of which is led to the input of an isolator (3), the output of which is connected via a coaxial cable to the first gate of a circulator (4). The second gate of the circulator (4) is also connected via a coaxial cable to a contact pin (5), while the circulator (4) is connected to a detector (8) via the third gate's coaxial connector. The contact needle (5) conducts the microwave field to the semiconductor material (6). HE

HU9902355A 1999-07-12 1999-07-12 High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors HUP9902355A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
HU9902355A HUP9902355A2 (en) 1999-07-12 1999-07-12 High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors
PCT/HU2000/000077 WO2001004610A2 (en) 1999-07-12 2000-07-12 Method and apparatus for sensitive measurement of the lifetime of minority carriers in semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU9902355A HUP9902355A2 (en) 1999-07-12 1999-07-12 High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors

Publications (2)

Publication Number Publication Date
HU9902355D0 HU9902355D0 (en) 1999-09-28
HUP9902355A2 true HUP9902355A2 (en) 2001-07-30

Family

ID=89998710

Family Applications (1)

Application Number Title Priority Date Filing Date
HU9902355A HUP9902355A2 (en) 1999-07-12 1999-07-12 High sensitivity method and apparatus for the measurement of the lifetime of minority charge carriers in semiconductors

Country Status (2)

Country Link
HU (1) HUP9902355A2 (en)
WO (1) WO2001004610A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6704275B2 (en) 2016-03-28 2020-06-03 株式会社ディスコ Device wafer evaluation method
CN111624158B (en) * 2020-06-10 2022-12-13 苏州科技大学 Online laser pulse ultrafast dynamics detection equipment and application method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236817B2 (en) * 1973-07-27 1977-09-19
DE3407850A1 (en) * 1984-02-29 1985-09-05 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin MICROWAVE MEASURING METHOD AND MEASURING APPARATUS FOR CONTACTLESS AND DESTRUCTION-FREE EXAMINATION OF PHOTO-SENSITIVE MATERIALS
US5406214A (en) * 1990-12-17 1995-04-11 Semilab Felvezeto Fizikai Lab, Rt Method and apparatus for measuring minority carrier lifetime in semiconductor materials

Also Published As

Publication number Publication date
WO2001004610A2 (en) 2001-01-18
HU9902355D0 (en) 1999-09-28
WO2001004610A3 (en) 2001-08-09

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Legal Events

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FA9A Lapse of provisional patent protection due to relinquishment or protection considered relinquished