HK99888A - Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers - Google Patents

Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Info

Publication number
HK99888A
HK99888A HK99888A HK99888A HK99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A
Authority
HK
Hong Kong
Prior art keywords
diethylberyllium
semiconductor layers
epitaxial semiconductor
dopant source
grown epitaxial
Prior art date
Application number
HK99888A
Other languages
English (en)
Inventor
James D Parsons
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1984/000399 external-priority patent/WO1984003995A1/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of HK99888A publication Critical patent/HK99888A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
HK99888A 1983-04-04 1988-12-08 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers HK99888A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209183A 1983-04-04 1983-04-04
PCT/US1984/000399 WO1984003995A1 (en) 1983-04-04 1984-03-15 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Publications (1)

Publication Number Publication Date
HK99888A true HK99888A (en) 1988-12-16

Family

ID=26770168

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99888A HK99888A (en) 1983-04-04 1988-12-08 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Country Status (2)

Country Link
HK (1) HK99888A (xx)
NO (1) NO163292C (xx)

Also Published As

Publication number Publication date
NO844811L (no) 1984-12-03
NO163292B (no) 1990-01-22
NO163292C (no) 1990-05-02

Similar Documents

Publication Publication Date Title
GB2198454B (en) Method for epitaxial growth of compound semiconductor
GB2144337B (en) Process for epitaxial growth
EP0475606A3 (en) Doping of iib-via semiconductors during molecular beam epitaxy
AU559159B2 (en) Carrier film for dicing semiconductor wafers
DE3479368D1 (en) Heterostructure bipolar transistor
DE3479523D1 (en) Method for growing multicomponent compound semiconductor crystals
GB8408563D0 (en) Iii-v group compound semiconductor crystal
EP0511864A3 (en) Epitaxially grown compound semiconductor crystals with buffer layers
GB2125705B (en) Growing semiconductor single crystals
GB2295830B (en) Two-dimensional epitaxial growth of III-V compound semiconductors
DE3471548D1 (en) Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers
DE3473379D1 (en) Method for minimizing autodoping during epitaxial deposition
DE3466786D1 (en) Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
EP0524817A3 (en) Crystal growth method of iii - v compound semiconductor
HK99888A (en) Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers
EP0564915A3 (en) Methods for growing compound semiconductor layers
EP0317228A3 (en) Epitaxial wafer
HK34088A (en) Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
SG27188G (en) Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
DE3260469D1 (en) Method for manufacturing gallium phosphide single crystals
DE3376924D1 (en) A method of performing solution growth of a group iii-v compound semiconductor crystal layer under control of the conductivity type thereof
EP0139990A3 (en) Reduced pressure epitaxial deposition process
GB2142662B (en) Preparing multifilament yarn for windings
GB2143745B (en) Growing semi conductor crystals
IL84118A (en) Process for ii-vi compound epitaxy