NO844811L - Dietylberyllium-dopemiddel/kilde for mocvd-dyrkede epitaksiale halvlederlag - Google Patents

Dietylberyllium-dopemiddel/kilde for mocvd-dyrkede epitaksiale halvlederlag

Info

Publication number
NO844811L
NO844811L NO844811A NO844811A NO844811L NO 844811 L NO844811 L NO 844811L NO 844811 A NO844811 A NO 844811A NO 844811 A NO844811 A NO 844811A NO 844811 L NO844811 L NO 844811L
Authority
NO
Norway
Prior art keywords
mocvd
cultivated
drugs
leads
source
Prior art date
Application number
NO844811A
Other languages
English (en)
Other versions
NO163292C (no
NO163292B (no
Inventor
James D Parsons
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1984/000399 external-priority patent/WO1984003995A1/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO844811L publication Critical patent/NO844811L/no
Publication of NO163292B publication Critical patent/NO163292B/no
Publication of NO163292C publication Critical patent/NO163292C/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
NO844811A 1983-04-04 1984-12-03 Fremgangsm te til avsetning av et epitaksialt lag alvledermateriale p et substrat. NO163292C (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209183A 1983-04-04 1983-04-04
PCT/US1984/000399 WO1984003995A1 (en) 1983-04-04 1984-03-15 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Publications (3)

Publication Number Publication Date
NO844811L true NO844811L (no) 1984-12-03
NO163292B NO163292B (no) 1990-01-22
NO163292C NO163292C (no) 1990-05-02

Family

ID=26770168

Family Applications (1)

Application Number Title Priority Date Filing Date
NO844811A NO163292C (no) 1983-04-04 1984-12-03 Fremgangsm te til avsetning av et epitaksialt lag alvledermateriale p et substrat.

Country Status (2)

Country Link
HK (1) HK99888A (no)
NO (1) NO163292C (no)

Also Published As

Publication number Publication date
NO163292C (no) 1990-05-02
NO163292B (no) 1990-01-22
HK99888A (en) 1988-12-16

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