HK91488A - A non-volatile,electrically erasable and reprogrammable memory element - Google Patents
A non-volatile,electrically erasable and reprogrammable memory elementInfo
- Publication number
- HK91488A HK91488A HK914/88A HK91488A HK91488A HK 91488 A HK91488 A HK 91488A HK 914/88 A HK914/88 A HK 914/88A HK 91488 A HK91488 A HK 91488A HK 91488 A HK91488 A HK 91488A
- Authority
- HK
- Hong Kong
- Prior art keywords
- volatile
- memory element
- electrically erasable
- reprogrammable memory
- reprogrammable
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH771179A CH633123A5 (en) | 1979-08-24 | 1979-08-24 | Electrically reprogrammable non-volatile memory element |
CH227180A CH636217A5 (en) | 1980-03-24 | 1980-03-24 | Electrically erasable and reprogrammable non-volatile memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
HK91488A true HK91488A (en) | 1988-11-18 |
Family
ID=25689969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK914/88A HK91488A (en) | 1979-08-24 | 1988-11-10 | A non-volatile,electrically erasable and reprogrammable memory element |
Country Status (4)
Country | Link |
---|---|
US (1) | US4399523A (xx) |
DE (1) | DE3031748A1 (xx) |
GB (1) | GB2059680B (xx) |
HK (1) | HK91488A (xx) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4435790A (en) | 1980-12-24 | 1984-03-06 | Fairchild Camera And Instrument Corporation | High speed, nonvolatile, electrically erasable memory cell and system |
JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
US4491857A (en) * | 1982-03-23 | 1985-01-01 | Texas Instruments Incorporated | Avalanche fuse element with isolated emitter |
DE3482847D1 (de) * | 1983-04-18 | 1990-09-06 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit einem schwebenden gate. |
US4879688A (en) * | 1985-03-04 | 1989-11-07 | Lattice Semiconductor Corporation | In-system programmable logic device |
US4787047A (en) * | 1985-03-22 | 1988-11-22 | Intersil | Electrically erasable fused programmable logic array |
US4683554A (en) * | 1985-09-13 | 1987-07-28 | Ncr Corporation | Direct write nonvolatile memory cells |
US5014097A (en) * | 1987-12-24 | 1991-05-07 | Waferscale Integration, Inc. | On-chip high voltage generator and regulator in an integrated circuit |
US5235544A (en) * | 1990-11-09 | 1993-08-10 | John Caywood | Flash EPROM cell and method for operating same |
FR2683664A1 (fr) * | 1991-11-13 | 1993-05-14 | Sgs Thomson Microelectronics | Memoire integree electriquement programmable a un seuil transistor. |
KR0135247B1 (ko) * | 1994-07-06 | 1998-04-22 | 김주용 | 플래쉬 메모리 셀 및 그 제조 방법 |
US5550072A (en) * | 1994-08-30 | 1996-08-27 | National Semiconductor Corporation | Method of fabrication of integrated circuit chip containing EEPROM and capacitor |
US5675531A (en) * | 1995-04-05 | 1997-10-07 | International Business Machines Corporation | Device for information storage using field emission |
JP3878681B2 (ja) * | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
DE19526012C2 (de) * | 1995-07-17 | 1997-09-11 | Siemens Ag | Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle |
US5790455A (en) * | 1997-01-02 | 1998-08-04 | John Caywood | Low voltage single supply CMOS electrically erasable read-only memory |
US6201732B1 (en) | 1997-01-02 | 2001-03-13 | John M. Caywood | Low voltage single CMOS electrically erasable read-only memory |
US5986931A (en) | 1997-01-02 | 1999-11-16 | Caywood; John M. | Low voltage single CMOS electrically erasable read-only memory |
US6038171A (en) * | 1997-03-25 | 2000-03-14 | Altera Corporation | Field emission erasable programmable read-only memory |
US6285247B1 (en) * | 1999-01-21 | 2001-09-04 | Agere Systems Guardian Corporation | Optimized low voltage CMOS operation |
US6437424B1 (en) * | 1999-03-09 | 2002-08-20 | Sanyo Electric Co., Ltd. | Non-volatile semiconductor memory device with barrier and insulating films |
US6541309B2 (en) * | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
JP2007220218A (ja) * | 2006-02-17 | 2007-08-30 | Fujitsu Ltd | 半導体記憶装置およびその制御方法 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US7859040B2 (en) * | 2008-07-10 | 2010-12-28 | Seagate Technology Llc | Non-volatile memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
-
1980
- 1980-08-22 DE DE19803031748 patent/DE3031748A1/de not_active Withdrawn
- 1980-08-22 US US06/180,488 patent/US4399523A/en not_active Expired - Lifetime
- 1980-08-26 GB GB8027587A patent/GB2059680B/en not_active Expired
-
1988
- 1988-11-10 HK HK914/88A patent/HK91488A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB2059680A (en) | 1981-04-23 |
DE3031748A1 (de) | 1982-03-04 |
US4399523A (en) | 1983-08-16 |
GB2059680B (en) | 1984-03-14 |
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