HK91488A - A non-volatile,electrically erasable and reprogrammable memory element - Google Patents

A non-volatile,electrically erasable and reprogrammable memory element

Info

Publication number
HK91488A
HK91488A HK914/88A HK91488A HK91488A HK 91488 A HK91488 A HK 91488A HK 914/88 A HK914/88 A HK 914/88A HK 91488 A HK91488 A HK 91488A HK 91488 A HK91488 A HK 91488A
Authority
HK
Hong Kong
Prior art keywords
volatile
memory element
electrically erasable
reprogrammable memory
reprogrammable
Prior art date
Application number
HK914/88A
Other languages
English (en)
Inventor
Jean Fellrath
Bernard Gerber
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH771179A external-priority patent/CH633123A5/fr
Priority claimed from CH227180A external-priority patent/CH636217A5/fr
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Publication of HK91488A publication Critical patent/HK91488A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
HK914/88A 1979-08-24 1988-11-10 A non-volatile,electrically erasable and reprogrammable memory element HK91488A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH771179A CH633123A5 (en) 1979-08-24 1979-08-24 Electrically reprogrammable non-volatile memory element
CH227180A CH636217A5 (en) 1980-03-24 1980-03-24 Electrically erasable and reprogrammable non-volatile memory element

Publications (1)

Publication Number Publication Date
HK91488A true HK91488A (en) 1988-11-18

Family

ID=25689969

Family Applications (1)

Application Number Title Priority Date Filing Date
HK914/88A HK91488A (en) 1979-08-24 1988-11-10 A non-volatile,electrically erasable and reprogrammable memory element

Country Status (4)

Country Link
US (1) US4399523A (xx)
DE (1) DE3031748A1 (xx)
GB (1) GB2059680B (xx)
HK (1) HK91488A (xx)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435790A (en) 1980-12-24 1984-03-06 Fairchild Camera And Instrument Corporation High speed, nonvolatile, electrically erasable memory cell and system
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US4491857A (en) * 1982-03-23 1985-01-01 Texas Instruments Incorporated Avalanche fuse element with isolated emitter
DE3482847D1 (de) * 1983-04-18 1990-09-06 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit einem schwebenden gate.
US4879688A (en) * 1985-03-04 1989-11-07 Lattice Semiconductor Corporation In-system programmable logic device
US4787047A (en) * 1985-03-22 1988-11-22 Intersil Electrically erasable fused programmable logic array
US4683554A (en) * 1985-09-13 1987-07-28 Ncr Corporation Direct write nonvolatile memory cells
US5014097A (en) * 1987-12-24 1991-05-07 Waferscale Integration, Inc. On-chip high voltage generator and regulator in an integrated circuit
US5235544A (en) * 1990-11-09 1993-08-10 John Caywood Flash EPROM cell and method for operating same
FR2683664A1 (fr) * 1991-11-13 1993-05-14 Sgs Thomson Microelectronics Memoire integree electriquement programmable a un seuil transistor.
KR0135247B1 (ko) * 1994-07-06 1998-04-22 김주용 플래쉬 메모리 셀 및 그 제조 방법
US5550072A (en) * 1994-08-30 1996-08-27 National Semiconductor Corporation Method of fabrication of integrated circuit chip containing EEPROM and capacitor
US5675531A (en) * 1995-04-05 1997-10-07 International Business Machines Corporation Device for information storage using field emission
JP3878681B2 (ja) * 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
DE19526012C2 (de) * 1995-07-17 1997-09-11 Siemens Ag Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6038171A (en) * 1997-03-25 2000-03-14 Altera Corporation Field emission erasable programmable read-only memory
US6285247B1 (en) * 1999-01-21 2001-09-04 Agere Systems Guardian Corporation Optimized low voltage CMOS operation
US6437424B1 (en) * 1999-03-09 2002-08-20 Sanyo Electric Co., Ltd. Non-volatile semiconductor memory device with barrier and insulating films
US6541309B2 (en) * 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
JP2007220218A (ja) * 2006-02-17 2007-08-30 Fujitsu Ltd 半導体記憶装置およびその制御方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7859040B2 (en) * 2008-07-10 2010-12-28 Seagate Technology Llc Non-volatile memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik

Also Published As

Publication number Publication date
GB2059680A (en) 1981-04-23
DE3031748A1 (de) 1982-03-04
US4399523A (en) 1983-08-16
GB2059680B (en) 1984-03-14

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