HK89997A - A magnetic field generating apparatus and a plasma generating apparatus for use therewith - Google Patents
A magnetic field generating apparatus and a plasma generating apparatus for use therewithInfo
- Publication number
- HK89997A HK89997A HK89997A HK89997A HK89997A HK 89997 A HK89997 A HK 89997A HK 89997 A HK89997 A HK 89997A HK 89997 A HK89997 A HK 89997A HK 89997 A HK89997 A HK 89997A
- Authority
- HK
- Hong Kong
- Prior art keywords
- generating apparatus
- magnetic field
- use therewith
- field generating
- plasma generating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900008939A KR930004713B1 (ko) | 1990-06-18 | 1990-06-18 | 변조방식을 이용한 플라즈마 발생장치 및 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK89997A true HK89997A (en) | 1997-08-01 |
Family
ID=19300212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK89997A HK89997A (en) | 1990-06-18 | 1997-06-26 | A magnetic field generating apparatus and a plasma generating apparatus for use therewith |
Country Status (7)
Country | Link |
---|---|
US (1) | US5087857A (ko) |
JP (1) | JPH0783016B2 (ko) |
KR (1) | KR930004713B1 (ko) |
DE (1) | DE4027341A1 (ko) |
GB (1) | GB2245416B (ko) |
HK (1) | HK89997A (ko) |
TW (1) | TW198764B (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2546405B2 (ja) * | 1990-03-12 | 1996-10-23 | 富士電機株式会社 | プラズマ処理装置ならびにその運転方法 |
JP2584389B2 (ja) * | 1992-06-10 | 1997-02-26 | 栄電子工業 株式会社 | Ecrプラズマエッチング加工方法 |
JP2933802B2 (ja) * | 1992-06-22 | 1999-08-16 | 松下電器産業株式会社 | ドライエッチング方法およびその装置 |
JPH06342769A (ja) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | エッチング方法及び装置 |
JP2584396B2 (ja) * | 1992-10-08 | 1997-02-26 | 栄電子工業 株式会社 | Ecrプラズマ処理方法 |
JP2693899B2 (ja) * | 1992-10-09 | 1997-12-24 | 栄電子工業株式会社 | Ecrプラズマ加工方法 |
JP3252507B2 (ja) * | 1993-01-29 | 2002-02-04 | ソニー株式会社 | プラズマ処理装置 |
JP3036296B2 (ja) * | 1993-05-25 | 2000-04-24 | 富士通株式会社 | プラズマディスプレイ装置の電源装置 |
US5534108A (en) * | 1993-05-28 | 1996-07-09 | Applied Materials, Inc. | Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor |
KR100327346B1 (ko) | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US6472822B1 (en) | 2000-04-28 | 2002-10-29 | Applied Materials, Inc. | Pulsed RF power delivery for plasma processing |
US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
JP4009087B2 (ja) * | 2001-07-06 | 2007-11-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法 |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
US7458335B1 (en) | 2002-10-10 | 2008-12-02 | Applied Materials, Inc. | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils |
US7422654B2 (en) * | 2003-02-14 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
US7179754B2 (en) * | 2003-05-28 | 2007-02-20 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
US7879510B2 (en) * | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
US7829243B2 (en) * | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
US7790334B2 (en) * | 2005-01-27 | 2010-09-07 | Applied Materials, Inc. | Method for photomask plasma etching using a protected mask |
US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
EP1753011B1 (de) * | 2005-08-13 | 2012-10-03 | HÜTTINGER Elektronik GmbH + Co. KG | Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren |
DE102006052061B4 (de) * | 2006-11-04 | 2009-04-23 | Hüttinger Elektronik Gmbh + Co. Kg | Verfahren zur Ansteuerung von zumindest zwei HF-Leistungsgeneratoren |
US7786019B2 (en) * | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
US10460913B2 (en) * | 2016-09-28 | 2019-10-29 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2217415A (en) * | 1939-12-29 | 1940-10-08 | Gen Electric | Discharge apparatus |
BE517412A (ko) * | 1952-02-05 | |||
FR91221E (ko) * | 1963-03-08 | 1968-08-28 | ||
GB1525393A (en) * | 1974-10-02 | 1978-09-20 | Daido Steel Co Ltd | Heat treating apparatus and method |
KR910000508B1 (ko) * | 1984-08-31 | 1991-01-26 | 니찌덴 아넬바 가부시끼가이샤 | 동적자계를 이용한 방전 반응장치 |
JPS6393881A (ja) * | 1986-10-08 | 1988-04-25 | Anelva Corp | プラズマ処理装置 |
JPH0620048B2 (ja) * | 1987-01-30 | 1994-03-16 | 富士電機株式会社 | 乾式薄膜加工装置 |
US4818916A (en) * | 1987-03-06 | 1989-04-04 | The Perkin-Elmer Corporation | Power system for inductively coupled plasma torch |
DE3810197A1 (de) * | 1987-03-27 | 1988-10-13 | Mitsubishi Electric Corp | Plasma-bearbeitungseinrichtung |
US4911814A (en) * | 1988-02-08 | 1990-03-27 | Nippon Telegraph And Telephone Corporation | Thin film forming apparatus and ion source utilizing sputtering with microwave plasma |
JPH0233187A (ja) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | ラスター水平位置制御装置 |
JPH02174229A (ja) * | 1988-12-27 | 1990-07-05 | Sumitomo Metal Ind Ltd | プラズマ装置およびその使用方法 |
-
1990
- 1990-06-18 KR KR1019900008939A patent/KR930004713B1/ko not_active IP Right Cessation
- 1990-07-27 JP JP2201077A patent/JPH0783016B2/ja not_active Expired - Lifetime
- 1990-07-31 US US07/560,756 patent/US5087857A/en not_active Expired - Lifetime
- 1990-08-29 DE DE4027341A patent/DE4027341A1/de not_active Ceased
- 1990-10-10 GB GB9022039A patent/GB2245416B/en not_active Expired - Fee Related
- 1990-11-13 TW TW079109533A patent/TW198764B/zh active
-
1997
- 1997-06-26 HK HK89997A patent/HK89997A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0448726A (ja) | 1992-02-18 |
GB2245416A (en) | 1992-01-02 |
KR920001640A (ko) | 1992-01-30 |
GB2245416B (en) | 1994-11-16 |
DE4027341A1 (de) | 1991-12-19 |
TW198764B (ko) | 1993-01-21 |
GB9022039D0 (en) | 1990-11-21 |
KR930004713B1 (ko) | 1993-06-03 |
US5087857A (en) | 1992-02-11 |
JPH0783016B2 (ja) | 1995-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20081010 |