HK35276A - Semiconductor bodies for semiconductor injection lasers - Google Patents

Semiconductor bodies for semiconductor injection lasers

Info

Publication number
HK35276A
HK35276A HK352/76*UA HK35276A HK35276A HK 35276 A HK35276 A HK 35276A HK 35276 A HK35276 A HK 35276A HK 35276 A HK35276 A HK 35276A
Authority
HK
Hong Kong
Prior art keywords
semiconductor
bodies
injection lasers
lasers
semiconductor bodies
Prior art date
Application number
HK352/76*UA
Other languages
English (en)
Inventor
Hayashi Izoi
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of HK35276A publication Critical patent/HK35276A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H10W72/5522—
    • H10W72/884—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
HK352/76*UA 1970-12-31 1976-06-10 Semiconductor bodies for semiconductor injection lasers HK35276A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10325270A 1970-12-31 1970-12-31

Publications (1)

Publication Number Publication Date
HK35276A true HK35276A (en) 1976-06-18

Family

ID=22294188

Family Applications (1)

Application Number Title Priority Date Filing Date
HK352/76*UA HK35276A (en) 1970-12-31 1976-06-10 Semiconductor bodies for semiconductor injection lasers

Country Status (12)

Country Link
US (1) US3691476A (enExample)
BE (1) BE777473A (enExample)
CH (1) CH537650A (enExample)
DE (1) DE2165006C3 (enExample)
ES (1) ES398774A1 (enExample)
FR (1) FR2120164B1 (enExample)
GB (1) GB1376910A (enExample)
HK (1) HK35276A (enExample)
IE (1) IE35940B1 (enExample)
IT (1) IT945841B (enExample)
NL (1) NL172710C (enExample)
SE (1) SE367893B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263835A (en) * 1970-10-15 1972-02-16 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
USRE29395E (en) * 1971-07-30 1977-09-13 Nippon Electric Company, Limited Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
US3920491A (en) * 1973-11-08 1975-11-18 Nippon Electric Co Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
JPS5411117B2 (enExample) * 1972-02-23 1979-05-11
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
DE2409016C3 (de) * 1973-02-26 1981-12-03 Matsushita Electronics Corp., Kadoma, Osaka Doppel-Heterostruktur-Laser
FR2225207B1 (enExample) * 1973-04-16 1978-04-21 Ibm
JPS5329479B2 (enExample) * 1973-10-05 1978-08-21
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
JPS5751276B2 (enExample) * 1973-10-23 1982-11-01
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
US3838359A (en) * 1973-11-23 1974-09-24 Bell Telephone Labor Inc Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4365260A (en) * 1978-10-13 1982-12-21 University Of Illinois Foundation Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
US5422533A (en) * 1994-03-09 1995-06-06 The United States Of America As Represented By The Secretary Of The Army Piezoelectric resonator
DE19536434C2 (de) * 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
RU2147152C1 (ru) * 1999-03-19 2000-03-27 Безотосный Виктор Владимирович Полупроводниковый лазер
AU4557300A (en) 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
KR101207660B1 (ko) * 2005-02-25 2012-12-03 도와 일렉트로닉스 가부시키가이샤 이중 헤테로 접합을 가지는 Ａ1ＧａＡｓ계 발광 다이오드및 그 제조 방법
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers

Also Published As

Publication number Publication date
DE2165006A1 (de) 1972-07-06
FR2120164B1 (enExample) 1977-08-05
BE777473A (fr) 1972-04-17
CH537650A (de) 1973-05-31
IE35940L (en) 1972-06-30
FR2120164A1 (enExample) 1972-08-11
AU3743571A (en) 1973-07-05
IE35940B1 (en) 1976-07-07
ES398774A1 (es) 1975-05-16
GB1376910A (en) 1974-12-11
US3691476A (en) 1972-09-12
NL172710B (nl) 1983-05-02
DE2165006C3 (de) 1979-06-07
NL7118044A (enExample) 1972-07-04
NL172710C (nl) 1983-10-03
IT945841B (it) 1973-05-10
SE367893B (enExample) 1974-06-10
DE2165006B2 (de) 1978-10-05

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