NL172710C - Halfgeleiderlaser en werkwijze voor het vervaardigen van deze laser. - Google Patents
Halfgeleiderlaser en werkwijze voor het vervaardigen van deze laser.Info
- Publication number
- NL172710C NL172710C NLAANVRAGE7118044,A NL7118044A NL172710C NL 172710 C NL172710 C NL 172710C NL 7118044 A NL7118044 A NL 7118044A NL 172710 C NL172710 C NL 172710C
- Authority
- NL
- Netherlands
- Prior art keywords
- laser
- manufacturing
- semiconductor laser
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10325270A | 1970-12-31 | 1970-12-31 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7118044A NL7118044A (xx) | 1972-07-04 |
NL172710B NL172710B (nl) | 1983-05-02 |
NL172710C true NL172710C (nl) | 1983-10-03 |
Family
ID=22294188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7118044,A NL172710C (nl) | 1970-12-31 | 1971-12-29 | Halfgeleiderlaser en werkwijze voor het vervaardigen van deze laser. |
Country Status (12)
Country | Link |
---|---|
US (1) | US3691476A (xx) |
BE (1) | BE777473A (xx) |
CH (1) | CH537650A (xx) |
DE (1) | DE2165006C3 (xx) |
ES (1) | ES398774A1 (xx) |
FR (1) | FR2120164B1 (xx) |
GB (1) | GB1376910A (xx) |
HK (1) | HK35276A (xx) |
IE (1) | IE35940B1 (xx) |
IT (1) | IT945841B (xx) |
NL (1) | NL172710C (xx) |
SE (1) | SE367893B (xx) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1263835A (en) * | 1970-10-15 | 1972-02-16 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
US3920491A (en) * | 1973-11-08 | 1975-11-18 | Nippon Electric Co | Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region |
USRE29395E (en) * | 1971-07-30 | 1977-09-13 | Nippon Electric Company, Limited | Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region |
JPS5411117B2 (xx) * | 1972-02-23 | 1979-05-11 | ||
US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
FR2219545B1 (xx) * | 1973-02-26 | 1976-12-03 | Matsushita Electronics Corp | |
FR2225207B1 (xx) * | 1973-04-16 | 1978-04-21 | Ibm | |
US4178604A (en) * | 1973-10-05 | 1979-12-11 | Hitachi, Ltd. | Semiconductor laser device |
JPS5329479B2 (xx) * | 1973-10-05 | 1978-08-21 | ||
JPS5751276B2 (xx) * | 1973-10-23 | 1982-11-01 | ||
US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
US3896473A (en) * | 1973-12-04 | 1975-07-22 | Bell Telephone Labor Inc | Gallium arsenide schottky barrier avalance diode array |
US3901738A (en) * | 1973-12-20 | 1975-08-26 | Hughes Aircraft Co | Ion implanted junction laser and process for making same |
US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
US3936322A (en) * | 1974-07-29 | 1976-02-03 | International Business Machines Corporation | Method of making a double heterojunction diode laser |
US4023993A (en) * | 1974-08-22 | 1977-05-17 | Xerox Corporation | Method of making an electrically pumped solid-state distributed feedback laser |
GB1478152A (en) * | 1974-10-03 | 1977-06-29 | Standard Telephones Cables Ltd | Light emissive diode |
US3982207A (en) * | 1975-03-07 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Quantum effects in heterostructure lasers |
US4205329A (en) * | 1976-03-29 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
US4365260A (en) * | 1978-10-13 | 1982-12-21 | University Of Illinois Foundation | Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material |
DE2933035A1 (de) * | 1979-08-16 | 1981-03-26 | Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt | Halbleiterlaser |
JPS61248561A (ja) * | 1985-04-25 | 1986-11-05 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体構造体 |
US5422533A (en) * | 1994-03-09 | 1995-06-06 | The United States Of America As Represented By The Secretary Of The Army | Piezoelectric resonator |
DE19536434C2 (de) * | 1995-09-29 | 2001-11-15 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterlaser-Bauelements |
JP2003519438A (ja) | 1999-04-27 | 2003-06-17 | シュラムバーガー ホールディングス リミテッド | 放射源 |
KR101207660B1 (ko) * | 2005-02-25 | 2012-12-03 | 도와 일렉트로닉스 가부시키가이샤 | 이중 헤테로 접합을 가지는 A1GaAs계 발광 다이오드및 그 제조 방법 |
JP2015509669A (ja) * | 2012-03-06 | 2015-03-30 | ソラア インコーポレーテッドSoraa Inc. | 導波光効果を低減させる低屈折率材料層を有する発光ダイオード |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
-
1970
- 1970-12-31 US US103252A patent/US3691476A/en not_active Expired - Lifetime
-
1971
- 1971-12-21 SE SE16406/71A patent/SE367893B/xx unknown
- 1971-12-24 ES ES398774A patent/ES398774A1/es not_active Expired
- 1971-12-28 DE DE2165006A patent/DE2165006C3/de not_active Expired
- 1971-12-29 CH CH1915471A patent/CH537650A/de not_active IP Right Cessation
- 1971-12-29 NL NLAANVRAGE7118044,A patent/NL172710C/xx not_active IP Right Cessation
- 1971-12-29 BE BE777473A patent/BE777473A/xx not_active IP Right Cessation
- 1971-12-30 IT IT71291/71A patent/IT945841B/it active
- 1971-12-30 IE IE1654/71A patent/IE35940B1/xx unknown
- 1971-12-30 GB GB6066171A patent/GB1376910A/en not_active Expired
- 1971-12-30 FR FR7147679A patent/FR2120164B1/fr not_active Expired
-
1976
- 1976-06-10 HK HK352/76*UA patent/HK35276A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2165006A1 (de) | 1972-07-06 |
BE777473A (fr) | 1972-04-17 |
DE2165006B2 (de) | 1978-10-05 |
ES398774A1 (es) | 1975-05-16 |
IE35940B1 (en) | 1976-07-07 |
IT945841B (it) | 1973-05-10 |
FR2120164B1 (xx) | 1977-08-05 |
DE2165006C3 (de) | 1979-06-07 |
HK35276A (en) | 1976-06-18 |
SE367893B (xx) | 1974-06-10 |
CH537650A (de) | 1973-05-31 |
AU3743571A (en) | 1973-07-05 |
US3691476A (en) | 1972-09-12 |
IE35940L (en) | 1972-06-30 |
NL172710B (nl) | 1983-05-02 |
NL7118044A (xx) | 1972-07-04 |
GB1376910A (en) | 1974-12-11 |
FR2120164A1 (xx) | 1972-08-11 |
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Legal Events
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BX | A request for additional search has been filed |
Free format text: TERUGGENOMEN VERZOEKEN |
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V1 | Lapsed because of non-payment of the annual fee |