HK33996A - Surface em iting laser - Google Patents

Surface em iting laser

Info

Publication number
HK33996A
HK33996A HK33996A HK33996A HK33996A HK 33996 A HK33996 A HK 33996A HK 33996 A HK33996 A HK 33996A HK 33996 A HK33996 A HK 33996A HK 33996 A HK33996 A HK 33996A
Authority
HK
Hong Kong
Prior art keywords
iting
laser
iting laser
Prior art date
Application number
HK33996A
Other languages
English (en)
Inventor
Jack Lee Jewell
Axel Scherer
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK33996A publication Critical patent/HK33996A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
HK33996A 1991-11-01 1996-02-29 Surface em iting laser HK33996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/786,653 US5206872A (en) 1991-11-01 1991-11-01 Surface emitting laser

Publications (1)

Publication Number Publication Date
HK33996A true HK33996A (en) 1996-03-08

Family

ID=25139226

Family Applications (1)

Application Number Title Priority Date Filing Date
HK33996A HK33996A (en) 1991-11-01 1996-02-29 Surface em iting laser

Country Status (8)

Country Link
US (1) US5206872A (de)
EP (1) EP0540239B1 (de)
JP (1) JP3373230B2 (de)
KR (1) KR100249072B1 (de)
CA (1) CA2078483C (de)
DE (1) DE69205388T2 (de)
HK (1) HK33996A (de)
TW (1) TW295315U (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5253262A (en) * 1990-10-31 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor laser device with multi-directional reflector arranged therein
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5353295A (en) * 1992-08-10 1994-10-04 The Board Of Trustees Of The University Of Illinois Semiconductor laser device with coupled cavities
US5572540A (en) * 1992-08-11 1996-11-05 University Of New Mexico Two-dimensional opto-electronic switching arrays
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5337327A (en) * 1993-02-22 1994-08-09 Motorola, Inc. VCSEL with lateral index guide
US5416044A (en) * 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
SE501635C2 (sv) * 1993-08-20 1995-04-03 Asea Brown Boveri Förfarande och anordning för utsändande av ljus med integrerad excitationskälla
GB2295269A (en) * 1994-11-14 1996-05-22 Sharp Kk Resonant cavity laser having oxide spacer region
US5513203A (en) * 1995-04-05 1996-04-30 At&T Corp. Surface emitting laser having improved pumping efficiency
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5659568A (en) * 1995-05-23 1997-08-19 Hewlett-Packard Company Low noise surface emitting laser for multimode optical link applications
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
JPH09232631A (ja) * 1996-02-27 1997-09-05 Sumitomo Chem Co Ltd ３−５族化合物半導体発光素子
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
US5963568A (en) * 1996-07-01 1999-10-05 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
WO1998050989A2 (en) * 1997-05-09 1998-11-12 The Trustees Of Princeton University Organic lasers
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6625195B1 (en) 1999-07-20 2003-09-23 Joseph Reid Henrichs Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light
JP3917790B2 (ja) * 1999-12-13 2007-05-23 日鉄住金鋼板株式会社 断熱パネルの製造方法
US6879615B2 (en) * 2000-01-19 2005-04-12 Joseph Reid Henrichs FCSEL that frequency doubles its output emissions using sum-frequency generation
US6704336B1 (en) * 2000-07-22 2004-03-09 Joseph Reid Henrichs Folded cavity surface emitting laser
US6628685B1 (en) * 2000-08-21 2003-09-30 Chan-Long Shieh Method of fabricating long-wavelength VCSEL and apparatus
JP2002329928A (ja) * 2001-02-27 2002-11-15 Ricoh Co Ltd 光通信システム
JP2002185043A (ja) * 2001-10-19 2002-06-28 Sumitomo Chem Co Ltd ３−５族化合物半導体発光素子の製造方法
US6618414B1 (en) * 2002-03-25 2003-09-09 Optical Communication Products, Inc. Hybrid vertical cavity laser with buried interface
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
KR20050120483A (ko) * 2004-06-19 2005-12-22 삼성전자주식회사 고효율 면발광 반도체 레이저 소자, 상기 레이저 소자용레이저 펌핑부, 그리고 그 제조 방법
KR101100433B1 (ko) * 2005-12-24 2011-12-30 삼성전자주식회사 후펌핑 수직외부공진형 표면발광 레이저 장치
KR101547327B1 (ko) * 2009-01-15 2015-09-07 삼성전자주식회사 광 이미지 변조기와 이를 포함하는 광학장치와 광 이미지 변조기의 제조 및 구동방법
JP6102525B2 (ja) * 2012-07-23 2017-03-29 株式会社リコー 面発光レーザ素子及び原子発振器
US9979158B1 (en) * 2017-01-12 2018-05-22 Technische Universitaet Berlin Vertical-cavity surface-emitting laser
KR102336953B1 (ko) * 2021-03-22 2021-12-09 (주)영화 단열재 스크랩의 재활용이 가능한 건축용 조립식 판넬의 제조방법 및 제조장치
US20220376476A1 (en) * 2021-05-19 2022-11-24 Mellanox Technologies, Ltd. Fabricating semiconductor devices, such as vcsels, with an oxide confinement layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1382401A (en) * 1973-02-13 1975-01-29 Inst Poluprovodnikov Solid state laser
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US4991179A (en) * 1989-04-26 1991-02-05 At&T Bell Laboratories Electrically pumped vertical cavity laser

Also Published As

Publication number Publication date
EP0540239B1 (de) 1995-10-11
TW295315U (en) 1997-01-01
KR100249072B1 (ko) 2000-03-15
EP0540239A1 (de) 1993-05-05
DE69205388D1 (de) 1995-11-16
JP3373230B2 (ja) 2003-02-04
US5206872A (en) 1993-04-27
CA2078483A1 (en) 1993-05-02
KR930011343A (ko) 1993-06-24
JPH05218579A (ja) 1993-08-27
DE69205388T2 (de) 1996-04-18
CA2078483C (en) 1997-08-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)