HK28788A - High performance dynamic mos read/write memory - Google Patents
High performance dynamic mos read/write memoryInfo
- Publication number
- HK28788A HK28788A HK287/88A HK28788A HK28788A HK 28788 A HK28788 A HK 28788A HK 287/88 A HK287/88 A HK 287/88A HK 28788 A HK28788 A HK 28788A HK 28788 A HK28788 A HK 28788A
- Authority
- HK
- Hong Kong
- Prior art keywords
- high performance
- write memory
- performance dynamic
- dynamic mos
- mos read
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
- H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356086—Bistable circuits with additional means for controlling the main nodes
- H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/940,221 US4239990A (en) | 1978-09-07 | 1978-09-07 | Clock voltage generator for semiconductor memory with reduced power dissipation |
US05/940,222 US4239991A (en) | 1978-09-07 | 1978-09-07 | Clock voltage generator for semiconductor memory |
US05/944,822 US4239993A (en) | 1978-09-22 | 1978-09-22 | High performance dynamic sense amplifier with active loads |
US05/953,145 US4280070A (en) | 1978-10-20 | 1978-10-20 | Balanced input buffer circuit for semiconductor memory |
US05/953,052 US4288706A (en) | 1978-10-20 | 1978-10-20 | Noise immunity in input buffer circuit for semiconductor memory |
US95567678A | 1978-10-30 | 1978-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK28788A true HK28788A (en) | 1988-04-29 |
Family
ID=27560349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK287/88A HK28788A (en) | 1978-09-07 | 1988-04-21 | High performance dynamic mos read/write memory |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2935121A1 (fr) |
GB (1) | GB2032211B (fr) |
HK (1) | HK28788A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573289A (en) * | 1980-06-04 | 1982-01-08 | Hitachi Ltd | Semiconductor storing circuit device |
EP0064569B1 (fr) * | 1981-05-13 | 1985-02-27 | Ibm Deutschland Gmbh | Circuit d'entrée pour une mémoire monolithique semiconductrice composée de transistors à effet de champ |
JPS58181319A (ja) * | 1982-04-19 | 1983-10-24 | Hitachi Ltd | タイミング発生回路 |
FR2528613B1 (fr) * | 1982-06-09 | 1991-09-20 | Hitachi Ltd | Memoire a semi-conducteurs |
JPS5956292A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | 半導体記憶装置 |
KR100480608B1 (ko) | 2002-08-07 | 2005-04-06 | 삼성전자주식회사 | 고속 a/d 변환기를 위한 고속 인코더 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333542A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Signal detection circuit |
-
1979
- 1979-08-30 DE DE19792935121 patent/DE2935121A1/de active Granted
- 1979-09-06 GB GB7931003A patent/GB2032211B/en not_active Expired
-
1988
- 1988-04-21 HK HK287/88A patent/HK28788A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2935121C2 (fr) | 1989-10-05 |
GB2032211B (en) | 1983-01-19 |
GB2032211A (en) | 1980-04-30 |
DE2935121A1 (de) | 1980-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE | Patent expired |