HK26477A - Improvements in or relating to non-crucible zone meliting of semiconductor rods - Google Patents

Improvements in or relating to non-crucible zone meliting of semiconductor rods

Info

Publication number
HK26477A
HK26477A HK264/77A HK26477A HK26477A HK 26477 A HK26477 A HK 26477A HK 264/77 A HK264/77 A HK 264/77A HK 26477 A HK26477 A HK 26477A HK 26477 A HK26477 A HK 26477A
Authority
HK
Hong Kong
Prior art keywords
meliting
relating
semiconductor rods
crucible zone
crucible
Prior art date
Application number
HK264/77A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247651 external-priority patent/DE2247651C3/de
Priority claimed from DE19732332968 external-priority patent/DE2332968C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK26477A publication Critical patent/HK26477A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK264/77A 1972-09-28 1977-06-02 Improvements in or relating to non-crucible zone meliting of semiconductor rods HK26477A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19722247651 DE2247651C3 (de) 1972-09-28 1972-09-28 Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes
DE19732332968 DE2332968C3 (de) 1973-06-28 1973-06-28 Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes

Publications (1)

Publication Number Publication Date
HK26477A true HK26477A (en) 1977-06-10

Family

ID=25763898

Family Applications (1)

Application Number Title Priority Date Filing Date
HK264/77A HK26477A (en) 1972-09-28 1977-06-02 Improvements in or relating to non-crucible zone meliting of semiconductor rods

Country Status (7)

Country Link
US (1) US3814827A (US20100012521A1-20100121-C00001.png)
DD (1) DD110182A5 (US20100012521A1-20100121-C00001.png)
DK (1) DK141784C (US20100012521A1-20100121-C00001.png)
FR (1) FR2201132B1 (US20100012521A1-20100121-C00001.png)
GB (1) GB1451622A (US20100012521A1-20100121-C00001.png)
HK (1) HK26477A (US20100012521A1-20100121-C00001.png)
IT (1) IT993934B (US20100012521A1-20100121-C00001.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2731250C2 (de) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Regelung des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Halbleiterstabes
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
US4845332A (en) * 1987-09-16 1989-07-04 National Steel Corp. Galvanneal induction furnace temperature control system
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
SE523237C2 (sv) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Anordning för uppvärmning med hjälp av induktion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (US20100012521A1-20100121-C00001.png) * 1962-04-27

Also Published As

Publication number Publication date
FR2201132B1 (US20100012521A1-20100121-C00001.png) 1980-04-30
US3814827A (en) 1974-06-04
DK141784C (da) 1980-11-03
DD110182A5 (US20100012521A1-20100121-C00001.png) 1974-12-12
IT993934B (it) 1975-09-30
DK141784B (da) 1980-06-16
FR2201132A1 (US20100012521A1-20100121-C00001.png) 1974-04-26
GB1451622A (en) 1976-10-06

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