HK193695A - Semiconductor optical amplifier with shortened gain recovery time - Google Patents

Semiconductor optical amplifier with shortened gain recovery time

Info

Publication number
HK193695A
HK193695A HK193695A HK193695A HK193695A HK 193695 A HK193695 A HK 193695A HK 193695 A HK193695 A HK 193695A HK 193695 A HK193695 A HK 193695A HK 193695 A HK193695 A HK 193695A
Authority
HK
Hong Kong
Prior art keywords
optical amplifier
recovery time
semiconductor optical
gain recovery
shortened
Prior art date
Application number
HK193695A
Other languages
English (en)
Inventor
Gadi Elsenstein
Per Bang Hansen
Rodney Stuart Tucker
Jay M Wiesenfild
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK193695A publication Critical patent/HK193695A/xx

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Optical Integrated Circuits (AREA)
HK193695A 1988-08-26 1995-12-28 Semiconductor optical amplifier with shortened gain recovery time HK193695A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23725288A 1988-08-26 1988-08-26

Publications (1)

Publication Number Publication Date
HK193695A true HK193695A (en) 1996-01-05

Family

ID=22892937

Family Applications (1)

Application Number Title Priority Date Filing Date
HK193695A HK193695A (en) 1988-08-26 1995-12-28 Semiconductor optical amplifier with shortened gain recovery time

Country Status (7)

Country Link
EP (1) EP0356189B1 (ko)
JP (1) JPH0648744B2 (ko)
KR (1) KR0139544B1 (ko)
CA (1) CA1292040C (ko)
DE (1) DE68919941T2 (ko)
ES (1) ES2064449T3 (ko)
HK (1) HK193695A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4530254B2 (ja) * 2003-10-02 2010-08-25 Ｆｄｋ株式会社 プラズモンモード光導波路
JP2006005167A (ja) 2004-06-17 2006-01-05 Sumitomo Electric Ind Ltd 半導体光素子
JP4552549B2 (ja) 2004-07-16 2010-09-29 住友電気工業株式会社 半導体光素子
JP2006066724A (ja) 2004-08-27 2006-03-09 Sumitomo Electric Ind Ltd 半導体光素子
JP4461980B2 (ja) 2004-09-22 2010-05-12 住友電気工業株式会社 半導体光素子
JP2006093350A (ja) 2004-09-22 2006-04-06 Sumitomo Electric Ind Ltd 半導体光素子
WO2006114782A1 (en) * 2005-04-26 2006-11-02 University College Cork-National University Of Ireland, Cork. An optical switch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7707720A (nl) * 1977-07-12 1979-01-16 Philips Nv Halfgeleiderlaser of -versterker.

Also Published As

Publication number Publication date
JPH0320724A (ja) 1991-01-29
KR0139544B1 (ko) 1998-07-01
CA1292040C (en) 1991-11-12
EP0356189B1 (en) 1994-12-14
EP0356189A2 (en) 1990-02-28
JPH0648744B2 (ja) 1994-06-22
DE68919941D1 (de) 1995-01-26
EP0356189A3 (en) 1990-10-17
KR900003672A (ko) 1990-03-26
DE68919941T2 (de) 1995-04-20
ES2064449T3 (es) 1995-02-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)