HK1246514A1 - 具有減小尺寸的多爾蒂功率放大器 - Google Patents

具有減小尺寸的多爾蒂功率放大器

Info

Publication number
HK1246514A1
HK1246514A1 HK18105579.8A HK18105579A HK1246514A1 HK 1246514 A1 HK1246514 A1 HK 1246514A1 HK 18105579 A HK18105579 A HK 18105579A HK 1246514 A1 HK1246514 A1 HK 1246514A1
Authority
HK
Hong Kong
Prior art keywords
power amplifier
reduced size
doherty power
doherty
size
Prior art date
Application number
HK18105579.8A
Other languages
English (en)
Inventor
Philip John Lehtola
Original Assignee
天工方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天工方案公司 filed Critical 天工方案公司
Publication of HK1246514A1 publication Critical patent/HK1246514A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21157—A filter circuit being added at the output of a power amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
HK18105579.8A 2015-02-15 2018-04-30 具有減小尺寸的多爾蒂功率放大器 HK1246514A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562116453P 2015-02-15 2015-02-15
PCT/US2016/017916 WO2016131028A1 (en) 2015-02-15 2016-02-13 Doherty power amplifier having reduced size

Publications (1)

Publication Number Publication Date
HK1246514A1 true HK1246514A1 (zh) 2018-09-07

Family

ID=56615709

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18105579.8A HK1246514A1 (zh) 2015-02-15 2018-04-30 具有減小尺寸的多爾蒂功率放大器

Country Status (5)

Country Link
US (2) US9923523B2 (zh)
KR (1) KR102603312B1 (zh)
CN (1) CN107408923B (zh)
HK (1) HK1246514A1 (zh)
WO (1) WO2016131028A1 (zh)

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US9634615B1 (en) * 2016-03-08 2017-04-25 Nxp Usa, Inc. Multi-band Doherty amplifier device and method therefor
CN207925675U (zh) * 2016-08-09 2018-09-28 广东通宇通讯股份有限公司 天线单元、多阵列天线系统及基站
US10554177B2 (en) 2017-11-27 2020-02-04 Skyworks Solutions, Inc. Quadrature combined doherty amplifiers
WO2019103899A1 (en) 2017-11-27 2019-05-31 Skyworks Solutions, Inc. Wideband power combiner and splitter
CN108111134A (zh) * 2017-12-30 2018-06-01 中国电子科技集团公司第十三研究所 功率放大装置和微波电路
US11283474B2 (en) * 2018-03-26 2022-03-22 Telefonaktiebolaset LM Ericsson (Publ) Baseband frequency selective magnitude and phase adjustment for wideband Doherty power amplifier
US10972055B2 (en) 2018-06-15 2021-04-06 Skyworks Solutions, Inc. Integrated doherty power amplifier
US11043920B2 (en) 2019-03-25 2021-06-22 City University Of Hong Kong Wideband Doherty high efficiency power amplifier
US11916517B2 (en) 2019-04-23 2024-02-27 Skyworks Solutions, Inc. Saturation detection of power amplifiers
US11398798B2 (en) 2020-03-02 2022-07-26 Skyworks Solutions, Inc. Doherty power amplifiers with coupled line combiners

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US5406236A (en) * 1992-12-16 1995-04-11 Motorola, Inc. Ceramic block filter having nonsymmetrical input and output impedances and combined radio communication apparatus
US6208205B1 (en) * 1999-07-12 2001-03-27 Motorola, Inc. Amplifier circuit and method for reducing noise therein
US6396341B1 (en) * 2000-12-29 2002-05-28 Ericsson Inc. Class E Doherty amplifier topology for high efficiency signal transmitters
US6982593B2 (en) * 2003-10-23 2006-01-03 Northrop Grumman Corporation Switching amplifier architecture
WO2004015859A2 (en) * 2002-08-12 2004-02-19 Koninklijke Philips Electronics N.V. Variable gain amplifier with improved control characteristics linearity
KR100480496B1 (ko) * 2002-11-18 2005-04-07 학교법인 포항공과대학교 도허티 증폭기를 이용한 신호 증폭 장치
DE112004001976T5 (de) * 2003-10-21 2006-10-19 Wavics, Inc., Palo Alto Hochlinearität-Doherty-Kommunikationsverstärker mit Vorspannungssteuerung
CN101098127A (zh) * 2006-06-19 2008-01-02 株式会社瑞萨科技 Rf功率放大器
JP2008035487A (ja) 2006-06-19 2008-02-14 Renesas Technology Corp Ｒｆ電力増幅器
CN101563840B (zh) * 2006-12-19 2012-06-06 三菱电机株式会社 电力放大装置
US7755429B2 (en) * 2007-02-16 2010-07-13 Microelectronics Technology Inc. System and method for dynamic drain voltage adjustment to control linearity, output power, and efficiency in RF power amplifiers
JP5217182B2 (ja) 2007-02-22 2013-06-19 富士通株式会社 高周波増幅回路
US7961048B2 (en) * 2008-12-12 2011-06-14 Samsung Electro-Mechanics Company Integrated power amplifiers for use in wireless communication devices
US8106711B2 (en) * 2009-11-12 2012-01-31 Peregrine Semiconductor Coporation Stacked pre-driver amplifier
WO2011070952A1 (ja) * 2009-12-08 2011-06-16 日本電気株式会社 送信装置
US8538355B2 (en) * 2010-04-19 2013-09-17 Rf Micro Devices, Inc. Quadrature power amplifier architecture
US8174322B2 (en) * 2010-05-04 2012-05-08 Nxp B.V. Power control of reconfigurable outphasing chireix amplifiers and methods
CN102185568A (zh) * 2011-04-29 2011-09-14 中兴通讯股份有限公司 一种多合体功率放大器及其实现方法
US8604881B2 (en) 2011-05-24 2013-12-10 Samsung Electronics Co., Ltd. Efficiency improvement of doherty power amplifier using supply switching and digitally controlled gate bias modulation of peaking amplifier
WO2011127868A2 (zh) * 2011-05-30 2011-10-20 华为技术有限公司 一种多赫尔提doherty功率放大器以及信号处理方法
JP2013192135A (ja) * 2012-03-15 2013-09-26 Panasonic Corp ドハティ増幅器
JP5586653B2 (ja) * 2012-05-02 2014-09-10 株式会社東芝 ドハティ回路
US9166536B2 (en) * 2012-10-30 2015-10-20 Eta Devices, Inc. Transmitter architecture and related methods
US9991856B2 (en) * 2014-09-25 2018-06-05 Skyworks Solutions, Inc. Variable load power amplifier supporting dual-mode envelope tracking and average power tracking performance
US9467095B2 (en) * 2014-10-13 2016-10-11 Intel Corporation Switchable dual core power amplifier

Also Published As

Publication number Publication date
WO2016131028A1 (en) 2016-08-18
KR20170117497A (ko) 2017-10-23
CN107408923B (zh) 2021-05-28
US20160248384A1 (en) 2016-08-25
US10756677B2 (en) 2020-08-25
KR102603312B1 (ko) 2023-11-17
US9923523B2 (en) 2018-03-20
US20190097585A1 (en) 2019-03-28
CN107408923A (zh) 2017-11-28

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