HK1218828A1 - 用於引導中性束的方法和裝置 - Google Patents

用於引導中性束的方法和裝置

Info

Publication number
HK1218828A1
HK1218828A1 HK16106680.4A HK16106680A HK1218828A1 HK 1218828 A1 HK1218828 A1 HK 1218828A1 HK 16106680 A HK16106680 A HK 16106680A HK 1218828 A1 HK1218828 A1 HK 1218828A1
Authority
HK
Hong Kong
Prior art keywords
directing
neutral beam
neutral
Prior art date
Application number
HK16106680.4A
Other languages
English (en)
Inventor
Sean R Kirkpatrick
Son Chau
Original Assignee
Exogenesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exogenesis Corp filed Critical Exogenesis Corp
Publication of HK1218828A1 publication Critical patent/HK1218828A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/02—Molecular or atomic beam generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments
    • H01J2237/1503—Mechanical scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1518—Electrostatic means for X-Y scanning
HK16106680.4A 2013-02-04 2016-06-10 用於引導中性束的方法和裝置 HK1218828A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361760238P 2013-02-04 2013-02-04
PCT/US2014/014720 WO2014121285A2 (en) 2013-02-04 2014-02-04 Method and apparatus for directing a neutral beam

Publications (1)

Publication Number Publication Date
HK1218828A1 true HK1218828A1 (zh) 2017-03-10

Family

ID=51263133

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16106680.4A HK1218828A1 (zh) 2013-02-04 2016-06-10 用於引導中性束的方法和裝置

Country Status (6)

Country Link
US (2) US20150366044A1 (zh)
EP (1) EP2952070B1 (zh)
JP (1) JP6408490B2 (zh)
HK (1) HK1218828A1 (zh)
RU (1) RU2653581C2 (zh)
WO (1) WO2014121285A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
WO2012027330A1 (en) 2010-08-23 2012-03-01 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US10181402B2 (en) * 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US9540725B2 (en) * 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
US9685298B1 (en) * 2016-02-01 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for contamination control in ion beam apparatus
DE112022000720T5 (de) * 2021-01-22 2023-11-16 Exogenesis Corporation Mit einem beschleunigten neutralen atomstrahl (bnas) modifiziertes polypropylen zur reduzierung der bakterienbesiedlung ohne antibiotika

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL278803A (zh) * 1961-05-25
US3588230A (en) * 1969-01-13 1971-06-28 Us Navy Adjustable lens mount
JPS5719946A (en) * 1980-07-11 1982-02-02 Hitachi Ltd Ion take-out section for ion injector
DE3235068A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Varioformstrahl-ablenkobjektiv fuer neutralteilchen und verfahren zu seinem betrieb
US4775789A (en) * 1986-03-19 1988-10-04 Albridge Jr Royal G Method and apparatus for producing neutral atomic and molecular beams
JPS6412453A (en) * 1987-07-06 1989-01-17 Fuji Electric Co Ltd Ion implanter
US4935623A (en) * 1989-06-08 1990-06-19 Hughes Aircraft Company Production of energetic atom beams
JPH08184698A (ja) * 1994-12-28 1996-07-16 Ebara Corp 高速原子線装置
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
JPH11185647A (ja) * 1997-12-22 1999-07-09 Nec Corp イオン源装置
US6441382B1 (en) * 1999-05-21 2002-08-27 Axcelis Technologies, Inc. Deceleration electrode configuration for ultra-low energy ion implanter
EP1238406B1 (en) * 1999-12-06 2008-12-17 TEL Epion Inc. Gas cluster ion beam smoother apparatus
JP3727050B2 (ja) * 2001-01-19 2005-12-14 住友イートンノバ株式会社 イオン注入装置及びそのイオンソース系の調節方法。
US7067828B2 (en) * 2003-01-27 2006-06-27 Epion Corporation Method of and apparatus for measurement and control of a gas cluster ion beam
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7825389B2 (en) * 2007-12-04 2010-11-02 Tel Epion Inc. Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture
RU2362277C1 (ru) * 2008-02-14 2009-07-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Способ генерации нейтронных импульсов
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
EP2567012B1 (en) * 2010-05-05 2015-12-16 Exogenesis Corporation Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby
US8481960B2 (en) * 2010-06-28 2013-07-09 Varian Semiconductor Equipment Associates, Inc. Deceleration lens
WO2012027330A1 (en) * 2010-08-23 2012-03-01 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology

Also Published As

Publication number Publication date
JP6408490B2 (ja) 2018-10-17
US20200022247A1 (en) 2020-01-16
WO2014121285A2 (en) 2014-08-07
EP2952070B1 (en) 2018-05-30
RU2653581C2 (ru) 2018-05-15
EP2952070A4 (en) 2016-10-12
WO2014121285A3 (en) 2015-02-19
US20150366044A1 (en) 2015-12-17
RU2015137676A (ru) 2017-03-10
JP2016507133A (ja) 2016-03-07
EP2952070A2 (en) 2015-12-09

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