HK1218349A1 - 具有具備中心接觸件的溝道區域的光傳感器 - Google Patents

具有具備中心接觸件的溝道區域的光傳感器

Info

Publication number
HK1218349A1
HK1218349A1 HK16106307.7A HK16106307A HK1218349A1 HK 1218349 A1 HK1218349 A1 HK 1218349A1 HK 16106307 A HK16106307 A HK 16106307A HK 1218349 A1 HK1218349 A1 HK 1218349A1
Authority
HK
Hong Kong
Prior art keywords
photosensor
channel region
center contact
center
contact
Prior art date
Application number
HK16106307.7A
Other languages
English (en)
Inventor
‧哈利烏林 納伊爾‧
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of HK1218349A1 publication Critical patent/HK1218349A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK16106307.7A 2014-10-03 2016-06-02 具有具備中心接觸件的溝道區域的光傳感器 HK1218349A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/506,399 US20160099283A1 (en) 2014-10-03 2014-10-03 Photosensor with channel region having center contact

Publications (1)

Publication Number Publication Date
HK1218349A1 true HK1218349A1 (zh) 2017-02-10

Family

ID=55633366

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16106307.7A HK1218349A1 (zh) 2014-10-03 2016-06-02 具有具備中心接觸件的溝道區域的光傳感器

Country Status (4)

Country Link
US (1) US20160099283A1 (zh)
CN (1) CN105489622B (zh)
HK (1) HK1218349A1 (zh)
TW (1) TWI577004B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11398519B2 (en) * 2017-12-09 2022-07-26 National University Corporation Shizuoka University Charge modulation element and solid-state imaging device
US10580820B2 (en) 2018-07-16 2020-03-03 Gigajot Technology Inc. High-sensitivity depth sensor with non-avalanche photodetector
US11061119B2 (en) * 2018-10-10 2021-07-13 Sensors Unlimited, Inc. Pixels for time of flight (TOF) imaging
JP2022108157A (ja) * 2021-01-12 2022-07-25 キオクシア株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188093B1 (en) * 1997-09-02 2001-02-13 Nikon Corporation Photoelectric conversion devices and photoelectric conversion apparatus employing the same
JP3783360B2 (ja) * 1997-09-02 2006-06-07 株式会社ニコン 光電変換素子及び光電変換装置
JP2005197350A (ja) * 2004-01-05 2005-07-21 Seiko Epson Corp 固体撮像装置
US7153719B2 (en) * 2004-08-24 2006-12-26 Micron Technology, Inc. Method of fabricating a storage gate pixel design
US7442970B2 (en) * 2004-08-30 2008-10-28 Micron Technology, Inc. Active photosensitive structure with buried depletion layer
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
KR101344441B1 (ko) * 2007-07-16 2013-12-23 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8698061B2 (en) * 2009-12-10 2014-04-15 Luxima Technology LLC Image sensors, methods, and pixels with storage and transfer gates
KR20130085228A (ko) * 2012-01-19 2013-07-29 삼성전자주식회사 이미지 센서, 이의 동작 방법, 및 이를 포함하는 휴대용 장치
US8933494B1 (en) * 2013-09-26 2015-01-13 Omnivision Technologies, Inc. Image sensor pixel cell having dual self-aligned implants next to storage gate

Also Published As

Publication number Publication date
CN105489622B (zh) 2018-10-16
TW201618293A (zh) 2016-05-16
US20160099283A1 (en) 2016-04-07
TWI577004B (zh) 2017-04-01
CN105489622A (zh) 2016-04-13

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