HK1216801A1 - 非對稱的憶阻器 - Google Patents

非對稱的憶阻器

Info

Publication number
HK1216801A1
HK1216801A1 HK16104596.2A HK16104596A HK1216801A1 HK 1216801 A1 HK1216801 A1 HK 1216801A1 HK 16104596 A HK16104596 A HK 16104596A HK 1216801 A1 HK1216801 A1 HK 1216801A1
Authority
HK
Hong Kong
Prior art keywords
memristor
asymmetrical
asymmetrical memristor
Prior art date
Application number
HK16104596.2A
Other languages
English (en)
Inventor
Frank Klefenz
Peter Husar
Adam Williamson
Lars Schumann
Lars Hiller
Ingo Hrselmann
Andreas Schober
Original Assignee
Fraunhofer-Gesellschaft Zur Forderung Der Angewand
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft Zur Forderung Der Angewand filed Critical Fraunhofer-Gesellschaft Zur Forderung Der Angewand
Publication of HK1216801A1 publication Critical patent/HK1216801A1/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Theoretical Computer Science (AREA)
  • Biophysics (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computational Linguistics (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Semiconductor Memories (AREA)
HK16104596.2A 2013-01-14 2016-04-21 非對稱的憶阻器 HK1216801A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2013/050598 WO2014108215A1 (en) 2013-01-14 2013-01-14 Asymmetrical memristor

Publications (1)

Publication Number Publication Date
HK1216801A1 true HK1216801A1 (zh) 2016-12-02

Family

ID=47603637

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16104596.2A HK1216801A1 (zh) 2013-01-14 2016-04-21 非對稱的憶阻器

Country Status (5)

Country Link
US (1) US9704093B2 (zh)
EP (1) EP2943958B1 (zh)
JP (1) JP6162822B2 (zh)
HK (1) HK1216801A1 (zh)
WO (1) WO2014108215A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320588B1 (en) * 2012-04-16 2022-05-03 Mohammad A. Mazed Super system on chip
US9755146B2 (en) 2015-09-10 2017-09-05 ARM, Ltd. Asymmetric correlated electron switch operation
US9824753B2 (en) * 2015-10-21 2017-11-21 Technische Universiteit Delft Computing device for “big data” applications using memristors
EP3537344B1 (en) * 2016-11-28 2024-01-24 Huawei Technologies Co., Ltd. Signal processing method and device based on spiking neural network
US11276820B2 (en) 2017-10-19 2022-03-15 Ryukoku University Memristor and neural network using same
WO2019174032A1 (zh) * 2018-03-16 2019-09-19 深圳市汇顶科技股份有限公司 忆阻器的制造方法、忆阻器和阻变式随机存取存储器rram
US10586922B1 (en) 2018-08-21 2020-03-10 International Business Machines Corporation Symmetric tunable PCM resistor for artificial intelligence circuits
CN109460818A (zh) * 2018-09-25 2019-03-12 电子科技大学 一种基于忆阻桥和阵列的多层神经网络设计方法
CN110110840B (zh) * 2019-04-22 2020-11-27 中国地质大学（武汉） 一种基于忆阻神经网络的联想记忆情感识别电路

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US5206541A (en) * 1991-04-30 1993-04-27 The Johns Hopkins University Current-mode based analog circuits for synthetic neural systems
US7359888B2 (en) 2003-01-31 2008-04-15 Hewlett-Packard Development Company, L.P. Molecular-junction-nanowire-crossbar-based neural network
US6927074B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Asymmetric memory cell
US20090206375A1 (en) * 2008-02-19 2009-08-20 Saha Samar K Reduced Leakage Current Field-Effect Transistor Having Asymmetric Doping And Fabrication Method Therefor
EP2263165A4 (en) * 2008-03-14 2011-08-24 Hewlett Packard Development Co NEUROMORPHIC CIRCUIT
US7846807B2 (en) * 2008-06-19 2010-12-07 Hermes-Epitek Corp. Method for forming memristor material and electrode structure with memristance
US8097870B2 (en) * 2008-11-05 2012-01-17 Seagate Technology Llc Memory cell with alignment structure
CN102265397B (zh) * 2008-12-23 2014-10-29 惠普开发有限公司 忆阻设备以及制造和使用所述忆阻设备的方法
US8455852B2 (en) * 2009-01-26 2013-06-04 Hewlett-Packard Development Company, L.P. Controlled placement of dopants in memristor active regions
US8812418B2 (en) * 2009-06-22 2014-08-19 Hewlett-Packard Development Company, L.P. Memristive adaptive resonance networks
WO2011016794A2 (en) * 2009-07-28 2011-02-10 Hewlett-Packard Development Company, L.P. Memristors with asymmetric electrodes
US8275728B2 (en) * 2009-11-05 2012-09-25 The United States Of America As Represented By The Secretary Of The Air Force Neuromorphic computer
US8120071B2 (en) * 2010-01-11 2012-02-21 Hewlett-Packard Development Company, L.P. Memfet ram
US8111494B2 (en) * 2010-01-28 2012-02-07 Hewlett-Packard Development Company, L.P. Memristor-protection integrated circuit and method for protection of a memristor during switching
DE102010000565A1 (de) 2010-02-26 2011-09-01 Technische Universität Ilmenau Hybrides dreidimensionales Sensorarray, insbesondere zur Vermessung elektrogener Zellanordnungen, sowie Messanordnung
US8433665B2 (en) * 2010-07-07 2013-04-30 Qualcomm Incorporated Methods and systems for three-memristor synapse with STDP and dopamine signaling
US8274813B2 (en) * 2010-07-16 2012-09-25 Hewlett-Packard Development Company, L.P. Memristive negative differential resistance device
FR2977350B1 (fr) * 2011-06-30 2013-07-19 Commissariat Energie Atomique Reseau de neurones artificiels a base de dispositifs memristifs complementaires
KR101564706B1 (ko) * 2011-07-22 2015-10-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 어레이에서의 저항성 스위칭 소자를 판독하기 위한 회로 및 그 방법
KR101620761B1 (ko) * 2011-07-27 2016-05-23 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 멤리스터 기반 데이터 저장 장치 내부의 기입 버퍼 용량을 감소시키는 방법 및 시스템
AU2013330962B2 (en) * 2012-10-19 2017-10-19 Georgia Tech Research Corporation Multilayer coatings formed on aligned arrays of carbon nanotubes

Also Published As

Publication number Publication date
EP2943958A1 (en) 2015-11-18
US9704093B2 (en) 2017-07-11
JP6162822B2 (ja) 2017-07-12
US20160019453A1 (en) 2016-01-21
EP2943958B1 (en) 2019-05-22
WO2014108215A1 (en) 2014-07-17
JP2016510501A (ja) 2016-04-07

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