HK1205047A1 - Reactor and process for producing high-purity silicon - Google Patents

Reactor and process for producing high-purity silicon

Info

Publication number
HK1205047A1
HK1205047A1 HK15105798.6A HK15105798A HK1205047A1 HK 1205047 A1 HK1205047 A1 HK 1205047A1 HK 15105798 A HK15105798 A HK 15105798A HK 1205047 A1 HK1205047 A1 HK 1205047A1
Authority
HK
Hong Kong
Prior art keywords
reactor
producing high
purity silicon
purity
silicon
Prior art date
Application number
HK15105798.6A
Other languages
English (en)
Chinese (zh)
Inventor
Uwe Kerat
Original Assignee
Schmid Silicon Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Silicon Technology Gmbh filed Critical Schmid Silicon Technology Gmbh
Publication of HK1205047A1 publication Critical patent/HK1205047A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
HK15105798.6A 2011-12-22 2015-06-18 Reactor and process for producing high-purity silicon HK1205047A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011089695A DE102011089695A1 (de) 2011-12-22 2011-12-22 Reaktor und Verfahren zur Herstellung von Reinstsilizium
PCT/EP2012/076747 WO2013093051A2 (de) 2011-12-22 2012-12-21 Reaktor und verfahren zur herstellung von reinstsilizium

Publications (1)

Publication Number Publication Date
HK1205047A1 true HK1205047A1 (en) 2015-12-11

Family

ID=47522601

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15105798.6A HK1205047A1 (en) 2011-12-22 2015-06-18 Reactor and process for producing high-purity silicon

Country Status (7)

Country Link
EP (1) EP2794087B1 (xx)
KR (1) KR102015491B1 (xx)
CN (1) CN104245116B (xx)
DE (1) DE102011089695A1 (xx)
HK (1) HK1205047A1 (xx)
TR (1) TR201820500T4 (xx)
WO (1) WO2013093051A2 (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015209008A1 (de) 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan
CN109399640A (zh) * 2018-12-25 2019-03-01 亚洲硅业（青海）有限公司 多晶硅还原炉硅芯安装装置以及安装方法
DE102019209898A1 (de) 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium
JP2023008110A (ja) 2021-07-05 2023-01-19 信越化学工業株式会社 多結晶シリコンロッドの製造装置及び製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
GB2028289B (en) 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4643890A (en) * 1984-09-05 1987-02-17 J. M. Huber Corporation Perforated reactor tube for a fluid wall reactor and method of forming a fluid wall
JP2002241120A (ja) * 2001-02-15 2002-08-28 Sumitomo Titanium Corp 多結晶シリコン製造用反応炉及び多結晶シリコン製造方法
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium
JP5428145B2 (ja) * 2006-10-31 2014-02-26 三菱マテリアル株式会社 トリクロロシラン製造装置
DE102009003368B3 (de) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess
CN102134745B (zh) * 2010-04-08 2013-07-10 江苏中能硅业科技发展有限公司 用于生产多晶硅的反应器及系统
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
EP2423352A1 (en) * 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
CN201962075U (zh) * 2011-03-28 2011-09-07 四川瑞晟光伏材料有限公司 多晶硅还原炉
CN102249241B (zh) * 2011-06-14 2013-04-17 上海森松新能源设备有限公司 多晶硅还原炉

Also Published As

Publication number Publication date
TR201820500T4 (tr) 2019-01-21
CN104245116A (zh) 2014-12-24
DE102011089695A1 (de) 2013-06-27
EP2794087B1 (de) 2018-11-07
EP2794087A2 (de) 2014-10-29
WO2013093051A2 (de) 2013-06-27
KR102015491B1 (ko) 2019-10-21
CN104245116B (zh) 2016-02-24
WO2013093051A3 (de) 2013-08-22
KR20140107555A (ko) 2014-09-04

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