HK1201632A1 - 使用堆叠式存儲器裝置裸片的存儲器系統和方法 - Google Patents

使用堆叠式存儲器裝置裸片的存儲器系統和方法

Info

Publication number
HK1201632A1
HK1201632A1 HK15102051.5A HK15102051A HK1201632A1 HK 1201632 A1 HK1201632 A1 HK 1201632A1 HK 15102051 A HK15102051 A HK 15102051A HK 1201632 A1 HK1201632 A1 HK 1201632A1
Authority
HK
Hong Kong
Prior art keywords
memory device
device dice
stacked
memory system
memory
Prior art date
Application number
HK15102051.5A
Other languages
English (en)
Inventor
‧崔
Original Assignee
Conversant Intellectual Property Man Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conversant Intellectual Property Man Inc filed Critical Conversant Intellectual Property Man Inc
Publication of HK1201632A1 publication Critical patent/HK1201632A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093—Input synchronization
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
HK15102051.5A 2011-11-25 2015-02-27 使用堆叠式存儲器裝置裸片的存儲器系統和方法 HK1201632A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161563682P 2011-11-25 2011-11-25
PCT/CA2012/001082 WO2013075225A1 (en) 2011-11-25 2012-11-23 Memory system and method using stacked memory device dice

Publications (1)

Publication Number Publication Date
HK1201632A1 true HK1201632A1 (zh) 2015-09-04

Family

ID=48466763

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15102051.5A HK1201632A1 (zh) 2011-11-25 2015-02-27 使用堆叠式存儲器裝置裸片的存儲器系統和方法

Country Status (8)

Country Link
US (3) US8879296B2 (zh)
EP (1) EP2783367A4 (zh)
JP (1) JP2015501985A (zh)
KR (1) KR20140098817A (zh)
CN (1) CN104025194A (zh)
HK (1) HK1201632A1 (zh)
TW (1) TW201342375A (zh)
WO (1) WO2013075225A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102424702B1 (ko) 2015-11-19 2022-07-25 삼성전자주식회사 불휘발성 메모리 모듈 및 이를 포함하는 전자 장치
KR102617843B1 (ko) * 2016-05-13 2023-12-27 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
US11487445B2 (en) 2016-11-22 2022-11-01 Intel Corporation Programmable integrated circuit with stacked memory die for storing configuration data
US10344646B2 (en) * 2018-08-21 2019-07-09 Tenneco Automotive Operating Company Inc. Exhaust gas burner assembly

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7210059B2 (en) * 2003-08-19 2007-04-24 Micron Technology, Inc. System and method for on-board diagnostics of memory modules
JP2008140220A (ja) * 2006-12-04 2008-06-19 Nec Corp 半導体装置
US8120958B2 (en) 2007-12-24 2012-02-21 Qimonda Ag Multi-die memory, apparatus and multi-die memory stack
US7855931B2 (en) * 2008-07-21 2010-12-21 Micron Technology, Inc. Memory system and method using stacked memory device dice, and system using the memory system
US8031505B2 (en) * 2008-07-25 2011-10-04 Samsung Electronics Co., Ltd. Stacked memory module and system
US7796446B2 (en) * 2008-09-19 2010-09-14 Qimonda Ag Memory dies for flexible use and method for configuring memory dies
US8032804B2 (en) * 2009-01-12 2011-10-04 Micron Technology, Inc. Systems and methods for monitoring a memory system
JP5632584B2 (ja) * 2009-02-05 2014-11-26 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US8046628B2 (en) * 2009-06-05 2011-10-25 Micron Technology, Inc. Failure recovery memory devices and methods
US8381059B2 (en) * 2010-02-17 2013-02-19 Micron Technology, Inc. Error correction and recovery in chained memory architectures
US9123552B2 (en) * 2010-03-30 2015-09-01 Micron Technology, Inc. Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same

Also Published As

Publication number Publication date
EP2783367A4 (en) 2015-07-22
JP2015501985A (ja) 2015-01-19
US9123394B2 (en) 2015-09-01
EP2783367A1 (en) 2014-10-01
US8879296B2 (en) 2014-11-04
KR20140098817A (ko) 2014-08-08
US20150036408A1 (en) 2015-02-05
US20130135917A1 (en) 2013-05-30
CN104025194A (zh) 2014-09-03
WO2013075225A1 (en) 2013-05-30
US20160071825A1 (en) 2016-03-10
TW201342375A (zh) 2013-10-16

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