HK1190825A1 - 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素 - Google Patents
具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素Info
- Publication number
- HK1190825A1 HK1190825A1 HK14103884.7A HK14103884A HK1190825A1 HK 1190825 A1 HK1190825 A1 HK 1190825A1 HK 14103884 A HK14103884 A HK 14103884A HK 1190825 A1 HK1190825 A1 HK 1190825A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- cmos image
- improved performance
- sensor pixel
- large cmos
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/543,592 US8581307B1 (en) | 2012-07-06 | 2012-07-06 | Large CMOS image sensor pixel with improved performance |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1190825A1 true HK1190825A1 (zh) | 2014-07-11 |
Family
ID=48745641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK14103884.7A HK1190825A1 (zh) | 2012-07-06 | 2014-04-23 | 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8581307B1 (zh) |
EP (1) | EP2682988A3 (zh) |
CN (1) | CN103531598B (zh) |
HK (1) | HK1190825A1 (zh) |
TW (1) | TWI532158B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9435641B2 (en) * | 2013-06-20 | 2016-09-06 | Analog Devices, Inc. | Optical angle measurement |
US9274202B2 (en) | 2013-06-20 | 2016-03-01 | Analog Devices, Inc. | Optical time-of-flight system |
US9812604B2 (en) * | 2014-05-30 | 2017-11-07 | Klaus Y. J. Hsu | Photosensing device with graphene |
US9812603B2 (en) * | 2014-05-30 | 2017-11-07 | Klaus Y. J. Hsu | Photosensing device with graphene |
CN104143558B (zh) * | 2014-08-15 | 2018-03-27 | 北京思比科微电子技术股份有限公司 | 一种提高阱容量的图像传感器像素及其制作方法 |
US11309284B2 (en) * | 2014-10-06 | 2022-04-19 | Sony Corporation | Solid-state image capturing apparatus and electronic device for acquiring a normal image and a narrow band image |
CN104269421B (zh) * | 2014-10-14 | 2017-03-22 | 北京思比科微电子技术股份有限公司 | 灵敏度自适应的图像传感器像素结构 |
US10163959B2 (en) * | 2015-11-16 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method for manufacturing the same |
CN107665898B (zh) * | 2016-07-28 | 2021-03-23 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制备方法和电子装置 |
CN110729320A (zh) * | 2019-10-18 | 2020-01-24 | 深圳市光微科技有限公司 | 像素单元、包含该像素单元的tof图像传感器以及成像装置 |
US12062670B2 (en) | 2021-04-28 | 2024-08-13 | Omnivision Technologies, Inc. | Pixel layout with photodiode region partially surrounding circuitry |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147372A (en) * | 1999-02-08 | 2000-11-14 | Taiwan Semiconductor Manufacturing Company | Layout of an image sensor for increasing photon induced current |
US7605415B2 (en) * | 2004-06-07 | 2009-10-20 | Canon Kabushiki Kaisha | Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring |
US20070023796A1 (en) * | 2005-07-27 | 2007-02-01 | International Business Machines Corporation | Pinning layer for pixel sensor cell and method thereof |
US7683448B2 (en) * | 2005-12-29 | 2010-03-23 | Dongbu Electronics Co., Ltd. | CMOS image sensor |
US8027561B2 (en) * | 2006-08-24 | 2011-09-27 | At&T Intellectual Property I, L.P. | Methods, devices and computer program products for event-based media file tagging |
JP5374941B2 (ja) * | 2008-07-02 | 2013-12-25 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US7952096B2 (en) * | 2008-12-08 | 2011-05-31 | Omnivision Technologies, Inc. | CMOS image sensor with improved backside surface treatment |
US20110032405A1 (en) * | 2009-08-07 | 2011-02-10 | Omnivision Technologies, Inc. | Image sensor with transfer gate having multiple channel sub-regions |
-
2012
- 2012-07-06 US US13/543,592 patent/US8581307B1/en active Active
-
2013
- 2013-05-21 TW TW102117939A patent/TWI532158B/zh active
- 2013-06-06 CN CN201310223504.5A patent/CN103531598B/zh active Active
- 2013-06-19 EP EP13172668.9A patent/EP2682988A3/en not_active Withdrawn
-
2014
- 2014-04-23 HK HK14103884.7A patent/HK1190825A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP2682988A3 (en) | 2016-06-22 |
EP2682988A2 (en) | 2014-01-08 |
US8581307B1 (en) | 2013-11-12 |
CN103531598A (zh) | 2014-01-22 |
CN103531598B (zh) | 2016-02-10 |
TW201403803A (zh) | 2014-01-16 |
TWI532158B (zh) | 2016-05-01 |
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