HK1178689A1 - 用於像素中高動態範圍成像的系統和成像傳感器像素 - Google Patents

用於像素中高動態範圍成像的系統和成像傳感器像素

Info

Publication number
HK1178689A1
HK1178689A1 HK13106243.7A HK13106243A HK1178689A1 HK 1178689 A1 HK1178689 A1 HK 1178689A1 HK 13106243 A HK13106243 A HK 13106243A HK 1178689 A1 HK1178689 A1 HK 1178689A1
Authority
HK
Hong Kong
Prior art keywords
pixel
imaging
dynamic range
high dynamic
imaging sensor
Prior art date
Application number
HK13106243.7A
Other languages
English (en)
Inventor
陳剛
毛杜利
戴幸志
霍華德．
．羅茲
Original Assignee
全視科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 全視科技有限公司 filed Critical 全視科技有限公司
Publication of HK1178689A1 publication Critical patent/HK1178689A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK13106243.7A 2011-06-08 2013-05-27 用於像素中高動態範圍成像的系統和成像傳感器像素 HK1178689A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/155,969 US8643132B2 (en) 2011-06-08 2011-06-08 In-pixel high dynamic range imaging

Publications (1)

Publication Number Publication Date
HK1178689A1 true HK1178689A1 (zh) 2013-09-13

Family

ID=47292445

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13106243.7A HK1178689A1 (zh) 2011-06-08 2013-05-27 用於像素中高動態範圍成像的系統和成像傳感器像素

Country Status (4)

Country Link
US (1) US8643132B2 (zh)
CN (1) CN102820309B (zh)
HK (1) HK1178689A1 (zh)
TW (1) TWI504258B (zh)

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JPWO2018185587A1 (ja) * 2017-04-03 2020-02-13 株式会社半導体エネルギー研究所 撮像装置および電子機器
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US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
US11011560B2 (en) * 2017-12-26 2021-05-18 Alexander Krymski Image sensors, methods, and high dynamic range pixels with variable capacitance
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CN110233979B (zh) * 2019-06-06 2021-11-19 锐芯微电子股份有限公司 图像传感器及其读出电路、像素结构
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Also Published As

Publication number Publication date
CN102820309B (zh) 2015-06-10
CN102820309A (zh) 2012-12-12
TW201251454A (en) 2012-12-16
US8643132B2 (en) 2014-02-04
US20120313197A1 (en) 2012-12-13
TWI504258B (zh) 2015-10-11

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