HK1166879A1 - 兩端子多通道 器件及其方法 - Google Patents
兩端子多通道 器件及其方法Info
- Publication number
- HK1166879A1 HK1166879A1 HK12107492.4A HK12107492A HK1166879A1 HK 1166879 A1 HK1166879 A1 HK 1166879A1 HK 12107492 A HK12107492 A HK 12107492A HK 1166879 A1 HK1166879 A1 HK 1166879A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- esd
- method therefor
- channel
- terminal multi
- esd device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/860,154 US8089095B2 (en) | 2008-10-15 | 2010-08-20 | Two terminal multi-channel ESD device and method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1166879A1 true HK1166879A1 (zh) | 2012-11-09 |
Family
ID=45795067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12107492.4A HK1166879A1 (zh) | 2010-08-20 | 2012-07-31 | 兩端子多通道 器件及其方法 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101772374B1 (zh) |
CN (1) | CN102376702B (zh) |
HK (1) | HK1166879A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8723264B2 (en) * | 2012-10-17 | 2014-05-13 | Semicondutor Components Industries, Llc | Electrostatic discharge devices and method of making the same |
US9337178B2 (en) * | 2012-12-09 | 2016-05-10 | Semiconductor Components Industries, Llc | Method of forming an ESD device and structure therefor |
CN104299965A (zh) * | 2013-07-15 | 2015-01-21 | 联华电子股份有限公司 | 静电防护装置 |
CN104617094B (zh) * | 2015-01-08 | 2018-04-17 | 电子科技大学 | 宽范围大电流高维持电压的双端esd集成保护器件及其制备方法 |
US20230215864A1 (en) * | 2022-01-03 | 2023-07-06 | Amazing Microelectronic Corp. | Bidirectional electrostatic discharge (esd) protection device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7880223B2 (en) | 2005-02-11 | 2011-02-01 | Alpha & Omega Semiconductor, Ltd. | Latch-up free vertical TVS diode array structure using trench isolation |
EP2022820B1 (de) | 2007-07-25 | 2016-08-24 | Ems-Patent Ag | Photochrome formmassen und daraus hergestellte gegenstände |
US7579632B2 (en) * | 2007-09-21 | 2009-08-25 | Semiconductor Components Industries, L.L.C. | Multi-channel ESD device and method therefor |
US7538395B2 (en) * | 2007-09-21 | 2009-05-26 | Semiconductor Components Industries, L.L.C. | Method of forming low capacitance ESD device and structure therefor |
US7842969B2 (en) * | 2008-07-10 | 2010-11-30 | Semiconductor Components Industries, Llc | Low clamp voltage ESD device and method therefor |
US7812367B2 (en) * | 2008-10-15 | 2010-10-12 | Semiconductor Components Industries, Llc | Two terminal low capacitance multi-channel ESD device |
-
2010
- 2010-10-25 CN CN201010518126.XA patent/CN102376702B/zh not_active Expired - Fee Related
- 2010-11-25 KR KR1020100117908A patent/KR101772374B1/ko active IP Right Grant
-
2012
- 2012-07-31 HK HK12107492.4A patent/HK1166879A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102376702A (zh) | 2012-03-14 |
KR20120022502A (ko) | 2012-03-12 |
CN102376702B (zh) | 2014-09-17 |
KR101772374B1 (ko) | 2017-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20211027 |