HK1166879A1 - Two terminal multi-channel esd device and method therefor esd - Google Patents

Two terminal multi-channel esd device and method therefor esd

Info

Publication number
HK1166879A1
HK1166879A1 HK12107492.4A HK12107492A HK1166879A1 HK 1166879 A1 HK1166879 A1 HK 1166879A1 HK 12107492 A HK12107492 A HK 12107492A HK 1166879 A1 HK1166879 A1 HK 1166879A1
Authority
HK
Hong Kong
Prior art keywords
esd
method therefor
channel
terminal multi
esd device
Prior art date
Application number
HK12107492.4A
Other languages
Chinese (zh)
Inventor
．薩利
劉明焦
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/860,154 external-priority patent/US8089095B2/en
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1166879A1 publication Critical patent/HK1166879A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK12107492.4A 2010-08-20 2012-07-31 Two terminal multi-channel esd device and method therefor esd HK1166879A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/860,154 US8089095B2 (en) 2008-10-15 2010-08-20 Two terminal multi-channel ESD device and method therefor

Publications (1)

Publication Number Publication Date
HK1166879A1 true HK1166879A1 (en) 2012-11-09

Family

ID=45795067

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12107492.4A HK1166879A1 (en) 2010-08-20 2012-07-31 Two terminal multi-channel esd device and method therefor esd

Country Status (3)

Country Link
KR (1) KR101772374B1 (en)
CN (1) CN102376702B (en)
HK (1) HK1166879A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723264B2 (en) * 2012-10-17 2014-05-13 Semicondutor Components Industries, Llc Electrostatic discharge devices and method of making the same
US9337178B2 (en) * 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
CN104299965A (en) * 2013-07-15 2015-01-21 联华电子股份有限公司 Static protection device
CN104617094B (en) * 2015-01-08 2018-04-17 电子科技大学 Both-end ESD integrated protection devices of wide scope high current high maintenance voltage and preparation method thereof
US20230215864A1 (en) * 2022-01-03 2023-07-06 Amazing Microelectronic Corp. Bidirectional electrostatic discharge (esd) protection device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880223B2 (en) 2005-02-11 2011-02-01 Alpha & Omega Semiconductor, Ltd. Latch-up free vertical TVS diode array structure using trench isolation
EP2022820B1 (en) 2007-07-25 2016-08-24 Ems-Patent Ag Photochrome moulding material and objects made therefrom
US7538395B2 (en) * 2007-09-21 2009-05-26 Semiconductor Components Industries, L.L.C. Method of forming low capacitance ESD device and structure therefor
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
US7842969B2 (en) 2008-07-10 2010-11-30 Semiconductor Components Industries, Llc Low clamp voltage ESD device and method therefor
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device

Also Published As

Publication number Publication date
KR20120022502A (en) 2012-03-12
KR101772374B1 (en) 2017-08-29
CN102376702B (en) 2014-09-17
CN102376702A (en) 2012-03-14

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20211027