CN104299965A - Static protection device - Google Patents
Static protection device Download PDFInfo
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- CN104299965A CN104299965A CN201310295650.9A CN201310295650A CN104299965A CN 104299965 A CN104299965 A CN 104299965A CN 201310295650 A CN201310295650 A CN 201310295650A CN 104299965 A CN104299965 A CN 104299965A
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- doped region
- protection apparatus
- electrostatic protection
- conductivity
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Abstract
The invention discloses a static protection device which comprises a substrate with a first conduction type, a doping trap with a second conduction type and arranged in the substrate, a first doping area with the first conduction type and arranged in the doping trap, a second doping area with the first conduction type and arranged in the substrate, a front end point electrically connected with the first doping area, and a back end point located on one back of the substrate, wherein part of thesecond doping area is located in the doping trap; and the rest of the second doping area is not contacted with the doping trap.
Description
Technical field
The present invention relates to a kind of electrostatic protection apparatus.In specific words, the present invention relates to a kind of electrostatic protection apparatus with equal positive and negative Clamping voltages (clamp voltage).
Background technology
Electrostatic defending is a considerable link during current various sophisticated semiconductor integrated circuit (IC) design manufactures.Due to significantly reducing of component size, the density of integrated circuit constantly improves, and for the intrusion of electrostatic force, the element of general micro-structure is all difficult to keep out, and very easily wrecks.
The generation of electrostatic discharges, may start because of in many factors, and often be difficult to avoid.Electronic component or system manufacturing, assemble, test, in the process to deposit etc., electrostatic can be accumulated in human body, instrument, store among equipment etc., even also can accumulation electrostatic at electronic component itself, and people are in unwitting situation, these objects are contacted with each other, thus a shape discharge path, makes electronic component or system to suffer wreaking havoc of static discharge.
Therefore, how preventing the injury of electrostatic force or provide the design being enough to electrostatic force to discharge, is just improving product reliability and the important process improving yield.
Summary of the invention
For solving the problem, the electrostatic protection apparatus that the present invention proposes, it comprises: a substrate has one first conductivity, one dopant well has one second conductivity and is arranged in substrate, one first doped region has the first conductivity and is arranged in dopant well, one second doped region has the first conductivity and is arranged in substrate, wherein part second adulterates position in dopant well, the second doped region not contact doping trap of remainder, end points electrically connect first doped region, front and a reverse side end points are positioned at a reverse side of substrate.
Electrostatic protection apparatus of the present invention, it has equal positive and negative Clamping voltages, and then obtains gratifying static discahrge protection effect.
Accompanying drawing explanation
Fig. 1 to Fig. 3 is the schematic diagram of the manufacture method of electrostatic protection apparatus of the present invention;
Fig. 4 is a preferred embodiment of the top view of Fig. 2;
The top view of the first doped region that Fig. 5 illustrates for preferred embodiment according to the present invention;
The top view of the second doped region that Fig. 6 illustrates for preferred embodiment according to the present invention;
Fig. 7 is another preferred embodiment of the top view of Fig. 2;
The top view of the secondary doped region that Fig. 8 illustrates for preferred embodiment according to the present invention;
Fig. 9 illustrates the equivalent circuit diagram of electrostatic protection apparatus of the present invention;
Figure 10 illustrates the current-voltage curve figure of electrostatic protection apparatus of the present invention.
Main element symbol description
10 substrate 12 fronts
14 reverse side 16 insulation systems
18 active area 20 dopant wells
22 first doped region, doped regions 24 second
26 dielectric layer 28 front end points
30 conductive plunger 32 conductive pads
34 reverse side end points 100 electrostatic protection apparatus
124 doped regions
Embodiment
Fig. 1 to Fig. 3 is the schematic diagram of the manufacture method of electrostatic protection apparatus of the present invention.As shown in Figure 1, first provide a substrate 10 to have one first conductivity, substrate 10 is generally semiconductor base material, such as silicon, and the first conductivity can be P type or N-type, and substrate 10 has front 12 and a reverse side 14.Then in the front 12 of substrate 10, an insulation system 16 is formed, to define an active area 18 in substrate 10, insulation system 16 can be shallow trench isolation from (STI) or field oxide (Fox) etc., overall use of surrounding as electric insulation.Then in the active area 18 of substrate 10, a dopant well 20 is formed, dopant well 20 has the second conductivity and the first conductivity is different, and the second conductivity can be N-type or P type, for example, when the first conductivity is P type, the second conductivity is then N-type; On the contrary, when the first conductivity is N-type, the second conductivity is then P type.In embodiment hereafter with the first conductivity for P type, the second conductivity is N-type is example.
As shown in Figure 2, carry out an admixture and inject manufacture craft, form one first doped region 22 and one second doped region 24 simultaneously, first doped region 22 and the second doped region 24 all have the first conductivity, that is the first doped region 22 is identical with substrate 10 with the conductivity of the second doped region 24, the formation method of doped region is known by this technology personage, seldom repeat at this, and because the first doped region 22 and the second doped region 24 are formed in same step, so the first doped region 22 in essence can be identical with the dopant concentration of the second doped region 24, the wherein dopant concentration of the first doped region 22 and the second doped region 24, can between E14 atomicity/square centimeter (centimetre) to E15 atomicity/square centimeter.In first dopant well 20 of 22, doped region in the active area 18 of substrate 10, preferably, first doped region 22 is completely in dopant well 20, be doped trap 20 to surround, same position, second doped region 24 is in the active area 18 of substrate 10, and it is overlapping with dopant well 20 in dopant well 20 that the second doped region 24 has a Part I A position, 24, the second doped region not contact doping trap 20 of one Part II B, in other words, second doped region 24 is the dopant well 20 of lap and a region C of substrate 10 simultaneously, and dopant well 20 is not set in the region C of aforementioned substrates 10, other first doped region 22 does not contact mutually with the second doped region 24.
As shown in Figure 3, form the front 12 that a dielectric layer 26 covers substrate 10, then form a front end points 28 and run through dielectric layer 26 and electrically connect first doped region 22, front end points 28 is better comprise a conductive plunger 30 in dielectric layer 26 and a conductive pad 32 on dielectric layer 26.Form a reverse side end points 34 in the reverse side 14 of substrate 10 more afterwards, reverse side end points 34 can be a conductive pad.So far, electrostatic protection apparatus 100 of the present invention completed already.
Refer to Fig. 2, electrostatic protection apparatus of the present invention comprises substrate 10 and has one first conductivity, substrate 10 is generally semiconductor base material, such as silicon, first conductivity can be P type or N-type, wherein the dopant concentration of substrate 10 is better between E14 atomicity/square centimeter to E15 atomicity/square centimeter, and substrate 10 has front 12 and a reverse side 14.The front 12 that one insulation system establishes 16 to be placed in substrate 10, to define an active area 18, insulation system 16 can be shallow trench isolation from (STI) or field oxide (Fox) etc., overall use of surrounding as electric insulation.One dopant well 20 is arranged in the active area 18 of substrate 10, dopant well 20 has the second conductivity and the first conductivity is different, second conductivity can be P type or N-type, wherein the dopant concentration of dopant well is better between E12 atomicity/square centimeter to E15 atomicity/square centimeter, for example, when the first conductivity is P type, the second conductivity is then N-type; On the contrary, when the first conductivity is N-type, the second conductivity is then P type.In embodiment hereafter with the first conductivity for P type, the second conductivity is N-type is example.
The top view of Fig. 2 that Fig. 4 illustrates for the first preferred embodiment according to the present invention, please refer to Fig. 2 and Fig. 4, the first doped region 22 has the first conductivity and is arranged in dopant well 20, preferably, first doped region 22 completely, in dopant well 20, is doped trap 20 and surrounds.Second doped region 24 has the first conductivity, same position is in the active area 18 of substrate 10, and the second doped region 24 has a Part I A position in dopant well 20,24, the second doped region not contact doping trap 20 of one Part II B, in other words, second doped region 24 is the dopant well 20 of lap and a region C of substrate 10 simultaneously, and dopant well 20 is not set in the region C of aforementioned substrates 10, other first doped region 22 does not contact mutually with the second doped region 24, and the second doped region 24 does not have direct external wire on being.In addition, because the first doped region 22 and the second doped region 24 are all the first conductivity, so the first doped region 22 is identical with the conductivity of substrate 10 with the second doped region 24, the degree of depth of the second doped region 24 can be darker or more shallow than dopant well 20 than dopant well 20, the demand adjustment of visible product.
In addition, the top view of the first doped region 22 can be circular as shown in Figure 4, but be not limited thereto, the top view of the first doped region that Fig. 5 illustrates for preferred embodiment according to the present invention, Fig. 5 contains three kinds of embodiments, as embodiment (a), embodiment (b) and embodiment (c), represent the first different doped region 22 shapes respectively, as shown in embodiment (a), the shape of the first doped region 22 can be rectangle, as shown in embodiment (b), the shape of the first doped region 22 can be octangle, as shown in embodiment (c), the shape of the first doped region 22 can be oval, certainly the equalization done according to Fig. 5 changes and modifies, the shape of the first doped region 22 of gained, all should belong to covering scope of the present invention.
In addition, the top view of the second doped region 24 can be closed circular as shown in Figure 4, for an annulus in the diagram, but be not limited thereto, the shape of the second doped region that Fig. 6 illustrates for preferred embodiment according to the present invention, Fig. 6 contains four kinds of embodiments, as embodiment (a), embodiment (b), embodiment (c) and embodiment (d), represent the second different doped region 24 shapes respectively, as shown in embodiment (a), the shape of the second doped region 24 can be straight-flanked ring, as shown in embodiment (b), the shape of the second doped region 24 can be octangle ring, as shown in embodiment (c), the shape of the second doped region 24 can be track type ring, as shown in embodiment (d), the shape of the second doped region 24 can be vesica piscis, certainly the equalization done according to Fig. 6 changes and modifies, the shape of the second doped region of gained, all should belong to covering scope of the present invention.
The top view of Fig. 2 that Fig. 7 illustrates for the second preferred embodiment according to the present invention, please refer to Fig. 2, Fig. 4 and Fig. 7, separately comprise unlike the second doped region 24 in Fig. 7 the side that at least one secondary doped region 124 is arranged at the first doped region 22 with Fig. 4, but be not limited thereto, the quantity of secondary doped region 124 can be greater than one, around the first doped region 22, and secondary doped region 124 does not contact with each other, for example, second doped region 24 can comprise two doped regions 124, position is in the both sides of the first doped region 22 respectively, and secondary doped region 124 is not in contact with each other, according to other preferred embodiment.Secondary doped region 124 all has the first conductivity, and same position is in the active area 18 of substrate 10, and each doped region 124 has a Part I D position in dopant well 20,124, the secondary doped region not contact doping trap 20 of a Part II E.
In addition, two times doped region 124 top view can be rectangle as shown in Figure 7, but is not limited thereto.The shape of secondary doped region of Fig. 8 for illustrating according to other preferred embodiment of the present invention, Fig. 8 contains three kinds of embodiments, as embodiment (a), embodiment (b) and embodiment (c), represent the top view of different secondary doped regions 124 respectively, as shown in embodiment (a), the shape of two doped regions 124 can be all circle, as shown in embodiment (b), the shape of two doped regions 124 can be all octangle, as shown in embodiment (c), two times doped region 124 can be all ellipse, the equalization change done according to Fig. 8 and modification, the shape of the second doped region of gained, all should belong to covering scope of the present invention moreover.In addition, two doped regions 124, can select different shapes separately, and such as one time doped region 124 is circular, and another time 124, doped region is rectangle.The first doped region 22 in Fig. 7 is not limited to circle, can be replaced with other shape shown in Fig. 5.
Refer to Fig. 3; electrostatic protection apparatus 100 of the present invention separately comprises the front 12 that a dielectric layer 26 covers substrate 10; one front end points 28 runs through dielectric layer 26 and electrically connect first doped region 22; front end points 28 is better comprise a conductive plunger 30 in dielectric layer 26 and a conductive pad 32 on the dielectric layer 12; one reverse side end points 34 is at the reverse side 14 of substrate 10; reverse side end points 34 can be a conductive pad, front end points 28 usually can electrically connect one the element (not shown) protected by electrostatic protection apparatus of the present invention.
Fig. 9 illustrates the equivalent circuit diagram of electrostatic protection apparatus of the present invention.Figure 10 illustrates the current-voltage curve figure of electrostatic protection apparatus of the present invention.Please refer to Fig. 3 and Fig. 9, be P type in the first conductivity, when second conductivity is N-type, diode D1 is formed between the first doped region 22 and dopant well 20, diode D2 is formed between the second doped region 24 and dopant well 20, other, as the resistance of the element on the current paths such as front end points 28, reverse side end points 34, substrate 10, can form an equivalent resistance R.
As shown in Figure 9 and Figure 10, electrostatic protection apparatus 100 has positive Clamping voltages (positive clamp voltage) V1 and negative Clamping voltages (negative clamp voltage) V2, the forward bias voltage drop (forward voltage) that positive Clamping voltages V1 equals diode D1 adds the breakdown voltage (break down voltage) of diode D2, adds the voltage drop (voltage drop) that equivalent resistance R causes.The forward bias voltage drop that negative Clamping voltages V2 equals diode D2 adds the breakdown voltage of diode D1, and add the voltage drop that equivalent resistance R causes, it should be noted that: electrostatic protection apparatus 100 of the present invention, its positive Clamping voltages V1 equals negative Clamping voltages V2.
Please refer to Fig. 9 and Figure 10, when front end points 28 receives positive electric pulse, and when making the numerical value of the voltage difference between front end points 28 and reverse side end points 34 be greater than the numerical value of positive Clamping voltages V1, positive electricity electric current I
pby front end points 28, diode D1 and diode D2 will be flowed through, through substrate 10, finally be flowed out by reverse side end points 34.Contrary, when front end points 28 receives negative electric pulses, and when making the numerical value of the voltage difference between front end points 28 and reverse side end points 34 be greater than the numerical value of negative Clamping voltages V2, positive electricity electric current I
nby reverse side end points 34, through substrate 10, diode D2 and diode D1 can be flowed through, finally flowed out by front end points 28.
The present invention utilizes the size of adjustment second doped region and dopant well overlap, and the dopant concentration of regulation and control the second doped region and dopant well, and electrostatic protection apparatus can be made to have identical positive Clamping voltages numerical value and negative Clamping voltages numerical value.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the claims in the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (15)
1. an electrostatic protection apparatus, comprises:
Substrate, has the first conductivity;
Dopant well, has the second conductivity and is arranged in this substrate;
First doped region, has this first conductivity and is arranged in this dopant well;
Second doped region, has this first conductivity and is arranged in this substrate, and wherein this second doping position of part is in this dopant well, and this second doped region of remainder does not contact this dopant well;
Front end points, this first doped region of electrically connect; And
Reverse side end points, is positioned at a reverse side of this substrate.
2. electrostatic protection apparatus as claimed in claim 1, wherein this dopant well of lap and a region of this substrate simultaneously, this second doped region, does not arrange this dopant well in this region.
3. electrostatic protection apparatus as claimed in claim 1, wherein this complete position, the first doped region is in this dopant well.
4. electrostatic protection apparatus as claimed in claim 1, wherein the shape of this first doped region comprises circle, rectangle, ellipse or octangle.
5. electrostatic protection apparatus as claimed in claim 1, wherein the shape of this second doped region is closed circular.
6. electrostatic protection apparatus as claimed in claim 5, wherein the shape of this second doped region comprises annulus, straight-flanked ring, vesica piscis, octangle ring or track type ring.
7. electrostatic protection apparatus as claimed in claim 1, wherein this second doped region separately comprises two doped regions, be arranged at the relative both sides of this first doped region, and the plurality of doped region is not in contact with each other.
8. electrostatic protection apparatus as claimed in claim 7, wherein respectively the shape of this doped region comprises circle, rectangle, ellipse or octangle.
9. electrostatic protection apparatus as claimed in claim 1, wherein this first conductivity is P type, and this second conductivity type is N-type.
10. electrostatic protection apparatus as claimed in claim 1, wherein this first conductivity is N-type, and this second conductivity type is P type.
11. electrostatic protection apparatus as claimed in claim 1, wherein this substrate has a dopant concentration, and this dopant concentration is between E14 atomicity/square centimeter to E15 atomicity/square centimeter.
12. electrostatic protection apparatus as claimed in claim 1, wherein this dopant well has a dopant concentration, and this dopant concentration is between E12 atomicity/square centimeter to E15 atomicity/square centimeter.
13. electrostatic protection apparatus as claimed in claim 1, wherein this second doped region has a dopant concentration, and this dopant concentration is between E14 atomicity/square centimeter to E15 atomicity/square centimeter.
14. electrostatic protection apparatus as claimed in claim 1, separately comprise an insulation system and are arranged in this substrate, to define an active area.
15. electrostatic protection apparatus as claimed in claim 14, wherein this dopant well, this first doped region and this second doped region are arranged in this active area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310295650.9A CN104299965A (en) | 2013-07-15 | 2013-07-15 | Static protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310295650.9A CN104299965A (en) | 2013-07-15 | 2013-07-15 | Static protection device |
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| CN104299965A true CN104299965A (en) | 2015-01-21 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521415A (en) * | 1993-12-24 | 1996-05-28 | Nec Corporation | Semiconductor device having a circuit for protecting the device from electrostatic discharge |
| US20020130390A1 (en) * | 2001-03-13 | 2002-09-19 | Ming-Dou Ker | ESD protection circuit with very low input capacitance for high-frequency I/O ports |
| CN101393912A (en) * | 2007-09-21 | 2009-03-25 | 半导体元件工业有限责任公司 | Method of forming low capacitance ESD device and structure therefor |
| CN101409287A (en) * | 2007-09-21 | 2009-04-15 | 半导体元件工业有限责任公司 | Multi-channel ESD device and method thereof |
| CN102280382A (en) * | 2011-09-07 | 2011-12-14 | 杭州士兰集成电路有限公司 | Electrostatic discharge protecting structure integrated in insulated gate bipolar transistor (IGBT) apparatus and manufacturing method of electrostatic discharge protecting structure |
| CN102376702A (en) * | 2010-08-20 | 2012-03-14 | 半导体元件工业有限责任公司 | Two-terminal multi-channel ESD device and method thereof |
-
2013
- 2013-07-15 CN CN201310295650.9A patent/CN104299965A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521415A (en) * | 1993-12-24 | 1996-05-28 | Nec Corporation | Semiconductor device having a circuit for protecting the device from electrostatic discharge |
| US20020130390A1 (en) * | 2001-03-13 | 2002-09-19 | Ming-Dou Ker | ESD protection circuit with very low input capacitance for high-frequency I/O ports |
| CN101393912A (en) * | 2007-09-21 | 2009-03-25 | 半导体元件工业有限责任公司 | Method of forming low capacitance ESD device and structure therefor |
| CN101409287A (en) * | 2007-09-21 | 2009-04-15 | 半导体元件工业有限责任公司 | Multi-channel ESD device and method thereof |
| CN102376702A (en) * | 2010-08-20 | 2012-03-14 | 半导体元件工业有限责任公司 | Two-terminal multi-channel ESD device and method thereof |
| CN102280382A (en) * | 2011-09-07 | 2011-12-14 | 杭州士兰集成电路有限公司 | Electrostatic discharge protecting structure integrated in insulated gate bipolar transistor (IGBT) apparatus and manufacturing method of electrostatic discharge protecting structure |
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Application publication date: 20150121 |