HK1128992A1 - Rod-type semiconductor device - Google Patents
Rod-type semiconductor deviceInfo
- Publication number
- HK1128992A1 HK1128992A1 HK09108695.2A HK09108695A HK1128992A1 HK 1128992 A1 HK1128992 A1 HK 1128992A1 HK 09108695 A HK09108695 A HK 09108695A HK 1128992 A1 HK1128992 A1 HK 1128992A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- rod
- semiconductor device
- type semiconductor
- type
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/311936 WO2007144944A1 (ja) | 2006-06-14 | 2006-06-14 | ロッド形半導体デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1128992A1 true HK1128992A1 (en) | 2009-11-13 |
Family
ID=38831468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09108695.2A HK1128992A1 (en) | 2006-06-14 | 2009-09-23 | Rod-type semiconductor device |
Country Status (10)
Country | Link |
---|---|
US (2) | US8053788B2 (zh) |
EP (1) | EP2028698A4 (zh) |
JP (1) | JP4976388B2 (zh) |
KR (1) | KR101227568B1 (zh) |
CN (1) | CN101461068B (zh) |
AU (1) | AU2006344623C1 (zh) |
CA (1) | CA2657964C (zh) |
HK (1) | HK1128992A1 (zh) |
TW (1) | TWI312197B (zh) |
WO (1) | WO2007144944A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202009018722U1 (de) | 2008-02-26 | 2012-11-21 | Corning Inc. | Läutermittel für Silikatgläser |
JP5180307B2 (ja) * | 2008-08-08 | 2013-04-10 | 京セミ株式会社 | 採光型太陽電池モジュール |
WO2010019685A1 (en) * | 2008-08-14 | 2010-02-18 | Greenfield Solar Corp. | Photovoltaic cells with processed surfaces and related applications |
KR20110041401A (ko) * | 2009-10-15 | 2011-04-21 | 샤프 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
US8872214B2 (en) * | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
JP5614810B2 (ja) * | 2011-04-25 | 2014-10-29 | 日本電信電話株式会社 | 注入方法 |
TWI590433B (zh) * | 2015-10-12 | 2017-07-01 | 財團法人工業技術研究院 | 發光元件以及顯示器的製作方法 |
JP2019149389A (ja) * | 2016-07-11 | 2019-09-05 | シャープ株式会社 | 発光素子、発光装置、照明装置、バックライト、及び表示装置 |
CN108365255B (zh) * | 2017-12-19 | 2024-05-28 | 成都大超科技有限公司 | 一种锂电池电芯、锂电池及其制备方法 |
US10490690B1 (en) * | 2018-06-25 | 2019-11-26 | Newgo Design Studio | Vertical cylindrical reaction chamber for micro LED epitaxy and linear luminant fabrication process |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3984256A (en) | 1975-04-25 | 1976-10-05 | Nasa | Photovoltaic cell array |
FR2327643A1 (fr) * | 1975-10-09 | 1977-05-06 | Commissariat Energie Atomique | Convertisseur d'energie lumineuse en energie electrique |
FR2417188A1 (fr) * | 1978-02-08 | 1979-09-07 | Commissariat Energie Atomique | Convertisseur photovoltaique d'energie solaire |
US5342453A (en) | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
US5431741A (en) | 1992-12-11 | 1995-07-11 | Shin-Etsu Chemical Co., Ltd. | Silicon solar cell |
US5437736A (en) | 1994-02-15 | 1995-08-01 | Cole; Eric D. | Semiconductor fiber solar cells and modules |
DE69637769D1 (de) | 1996-10-09 | 2009-01-15 | Josuke Nakata | Halbleitervorrichtung |
DE60039535D1 (de) * | 2000-10-20 | 2008-08-28 | Josuke Nakata | Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode |
WO2002035613A1 (en) | 2000-10-20 | 2002-05-02 | Josuke Nakata | Light-emitting or light-detecting semiconductor module and method of manufacture thereof |
US7238968B2 (en) | 2001-08-13 | 2007-07-03 | Josuke Nakata | Semiconductor device and method of making the same |
CA2456671C (en) | 2001-08-13 | 2009-09-22 | Josuke Nakata | Light emitting or light receiving semiconductor module and making method thereof |
WO2003036731A1 (en) | 2001-10-19 | 2003-05-01 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing the same |
EP1553638B1 (en) * | 2002-06-21 | 2008-12-10 | Kyosemi Corporation | Light receiving or light emitting device and its production method |
US7387400B2 (en) * | 2003-04-21 | 2008-06-17 | Kyosemi Corporation | Light-emitting device with spherical photoelectric converting element |
-
2006
- 2006-06-14 JP JP2008521057A patent/JP4976388B2/ja not_active Expired - Fee Related
- 2006-06-14 US US12/227,414 patent/US8053788B2/en not_active Expired - Fee Related
- 2006-06-14 KR KR1020087028923A patent/KR101227568B1/ko not_active IP Right Cessation
- 2006-06-14 EP EP06766705A patent/EP2028698A4/en not_active Withdrawn
- 2006-06-14 WO PCT/JP2006/311936 patent/WO2007144944A1/ja active Application Filing
- 2006-06-14 CN CN2006800549421A patent/CN101461068B/zh not_active Expired - Fee Related
- 2006-06-14 AU AU2006344623A patent/AU2006344623C1/en not_active Ceased
- 2006-06-14 CA CA2657964A patent/CA2657964C/en not_active Expired - Fee Related
- 2006-07-14 TW TW095125834A patent/TWI312197B/zh not_active IP Right Cessation
-
2009
- 2009-09-23 HK HK09108695.2A patent/HK1128992A1/xx not_active IP Right Cessation
-
2011
- 2011-08-02 US US13/136,479 patent/US8362495B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI312197B (en) | 2009-07-11 |
EP2028698A1 (en) | 2009-02-25 |
US8053788B2 (en) | 2011-11-08 |
WO2007144944A1 (ja) | 2007-12-21 |
CN101461068A (zh) | 2009-06-17 |
KR101227568B1 (ko) | 2013-01-29 |
AU2006344623C1 (en) | 2014-01-09 |
CN101461068B (zh) | 2010-09-08 |
EP2028698A4 (en) | 2011-01-12 |
JPWO2007144944A1 (ja) | 2009-10-29 |
JP4976388B2 (ja) | 2012-07-18 |
KR20090021267A (ko) | 2009-03-02 |
US20110297968A1 (en) | 2011-12-08 |
US8362495B2 (en) | 2013-01-29 |
US20090108285A1 (en) | 2009-04-30 |
AU2006344623A1 (en) | 2007-12-21 |
CA2657964C (en) | 2014-09-23 |
TW200805684A (en) | 2008-01-16 |
AU2006344623B2 (en) | 2012-07-05 |
CA2657964A1 (en) | 2007-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CHRG | Changes in the register |
Free format text: CORRECTION OF THE CHINESE NAME OF INVENTOR |
|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180614 |