HK1046469A1 - Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method - Google Patents

Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Info

Publication number
HK1046469A1
HK1046469A1 HK02107913.7A HK02107913A HK1046469A1 HK 1046469 A1 HK1046469 A1 HK 1046469A1 HK 02107913 A HK02107913 A HK 02107913A HK 1046469 A1 HK1046469 A1 HK 1046469A1
Authority
HK
Hong Kong
Prior art keywords
processing
thin silicon
silicon films
solidification method
surface planarization
Prior art date
Application number
HK02107913.7A
Other languages
Chinese (zh)
Inventor
J‧S‧艾姆
R‧S‧斯波西利
M‧A‧克勞德
Original Assignee
紐約市哥倫比亞大學托管會
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 紐約市哥倫比亞大學托管會 filed Critical 紐約市哥倫比亞大學托管會
Publication of HK1046469A1 publication Critical patent/HK1046469A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
HK02107913.7A 2000-03-21 2002-10-31 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method HK1046469A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/007479 WO2001071791A1 (en) 2000-03-21 2000-03-21 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Publications (1)

Publication Number Publication Date
HK1046469A1 true HK1046469A1 (en) 2003-01-10

Family

ID=21741175

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02107913.7A HK1046469A1 (en) 2000-03-21 2002-10-31 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Country Status (10)

Country Link
EP (1) EP1196947A4 (en)
JP (1) JP4220156B2 (en)
KR (1) KR100672909B1 (en)
CN (1) CN1186802C (en)
AU (1) AU2000240180A1 (en)
CA (1) CA2374498A1 (en)
HK (1) HK1046469A1 (en)
MX (1) MXPA01011852A (en)
TW (1) TW499717B (en)
WO (1) WO2001071791A1 (en)

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
KR100333275B1 (en) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 TFT of LCD device and the same methode
US7135070B2 (en) 2002-04-23 2006-11-14 Sharp Laboratories Of America, Inc. Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
US7156916B2 (en) 2002-04-23 2007-01-02 Sharp Laboratories Of America, Inc. Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making
US6860939B2 (en) 2002-04-23 2005-03-01 Sharp Laboratories Of America, Inc. Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
US7125451B2 (en) 2002-04-23 2006-10-24 Sharp Laboratories Of America, Inc. Crystal-structure-processed mechanical devices and methods and systems for making
US7128783B2 (en) 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
US7622370B2 (en) * 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
JP2005129769A (en) 2003-10-24 2005-05-19 Hitachi Ltd Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor
JP2007165716A (en) 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd Laser crystallizing apparatus and method
JP2009032969A (en) * 2007-07-27 2009-02-12 Sharp Corp Apparatus of manufacturing semiconductor thin film, method of the same, and semiconductor thin film and semiconductor device produced by the method
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5443377B2 (en) 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Preparation system and method for preparing epitaxially oriented thick films
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
CN103745925A (en) * 2013-11-14 2014-04-23 上海和辉光电有限公司 Planarization polysilicon film manufacturing method
US20160074968A1 (en) * 2014-09-11 2016-03-17 Suss Microtec Photonic Systems Inc. Laser etching system including mask reticle for multi-depth etching
TWI577488B (en) * 2014-11-17 2017-04-11 財團法人工業技術研究院 Surface processing method
CN104779139A (en) * 2015-03-31 2015-07-15 深超光电（深圳）有限公司 Manufacturing method of semi-conductor thin film and manufacturing method of thin film transistor
CN106298451A (en) * 2016-08-18 2017-01-04 昆山国显光电有限公司 Laser crystallization method and device
CN111417487A (en) * 2018-01-24 2020-07-14 极光先进雷射株式会社 Laser processing method and laser processing system

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US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
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KR100299292B1 (en) * 1993-11-02 2001-12-01 이데이 노부유끼 Polysilicon Thin Film Forming Method and Surface Treatment Apparatus
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GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Also Published As

Publication number Publication date
MXPA01011852A (en) 2002-05-06
KR100672909B1 (en) 2007-01-22
WO2001071791A1 (en) 2001-09-27
KR20020002466A (en) 2002-01-09
AU2000240180A1 (en) 2001-10-03
CA2374498A1 (en) 2001-09-27
EP1196947A1 (en) 2002-04-17
JP2003528463A (en) 2003-09-24
JP4220156B2 (en) 2009-02-04
EP1196947A4 (en) 2003-08-13
CN1363117A (en) 2002-08-07
TW499717B (en) 2002-08-21
CN1186802C (en) 2005-01-26

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