AU2002219913A1 - Specialized substrates for use in sequential lateral solidification processing - Google Patents

Specialized substrates for use in sequential lateral solidification processing

Info

Publication number
AU2002219913A1
AU2002219913A1 AU2002219913A AU2002219913A AU2002219913A1 AU 2002219913 A1 AU2002219913 A1 AU 2002219913A1 AU 2002219913 A AU2002219913 A AU 2002219913A AU 2002219913 A AU2002219913 A AU 2002219913A AU 2002219913 A1 AU2002219913 A1 AU 2002219913A1
Authority
AU
Australia
Prior art keywords
use
sequential lateral
lateral solidification
solidification processing
specialized substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002219913A
Inventor
James S. Im
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University of New York
Original Assignee
Columbia University of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University of New York filed Critical Columbia University of New York
Priority to PCT/US2001/044563 priority Critical patent/WO2003046965A1/en
Publication of AU2002219913A1 publication Critical patent/AU2002219913A1/en
Application status is Abandoned legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02488Insulating materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02491Conductive materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02505Layer structure consisting of more than two layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
AU2002219913A 2001-11-28 2001-11-28 Specialized substrates for use in sequential lateral solidification processing Abandoned AU2002219913A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2001/044563 WO2003046965A1 (en) 2001-11-28 2001-11-28 Specialized substrates for use in sequential lateral solidification processing

Publications (1)

Publication Number Publication Date
AU2002219913A1 true AU2002219913A1 (en) 2003-06-10

Family

ID=21743030

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002219913A Abandoned AU2002219913A1 (en) 2001-11-28 2001-11-28 Specialized substrates for use in sequential lateral solidification processing

Country Status (2)

Country Link
AU (1) AU2002219913A1 (en)
WO (1) WO2003046965A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
CN1757093A (en) 2002-08-19 2006-04-05 纽约市哥伦比亚大学托管会 Single-shot semiconductor processing system and method having various irradiation patterns
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
CN103354204A (en) 2007-11-21 2013-10-16 纽约市哥伦比亚大学理事会 Systems and methods for preparation of epitaxially textured thick films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
JPS62181419A (en) * 1986-02-05 1987-08-08 Nec Corp Recrystallization method of polycrystalline silicon
JPH0350720A (en) * 1989-07-18 1991-03-05 Seiko Epson Corp Polycrystal silicon recrystallization
JPH0433327A (en) * 1990-05-30 1992-02-04 Kyocera Corp Forming method of semiconductor ctystallized film
JP3240258B2 (en) * 1996-03-21 2001-12-17 シャープ株式会社 Semiconductor device, a thin film transistor and a method of manufacturing the same, and a liquid crystal display device and manufacturing method thereof
CN1157764C (en) * 1999-11-22 2004-07-14 索尼株式会社 Functional device and method of mfg. the same
JP2001291850A (en) * 2000-04-10 2001-10-19 Hitachi Cable Ltd Method for manufacturing crystalline silicon thin film

Also Published As

Publication number Publication date
WO2003046965A1 (en) 2003-06-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase