AU2002219913A1 - Specialized substrates for use in sequential lateral solidification processing - Google Patents
Specialized substrates for use in sequential lateral solidification processingInfo
- Publication number
- AU2002219913A1 AU2002219913A1 AU2002219913A AU2002219913A AU2002219913A1 AU 2002219913 A1 AU2002219913 A1 AU 2002219913A1 AU 2002219913 A AU2002219913 A AU 2002219913A AU 2002219913 A AU2002219913 A AU 2002219913A AU 2002219913 A1 AU2002219913 A1 AU 2002219913A1
- Authority
- AU
- Australia
- Prior art keywords
- solidification processing
- sequential lateral
- lateral solidification
- specialized substrates
- specialized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000008023 solidification Effects 0.000 title 1
- 238000007711 solidification Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2001/044563 WO2003046965A1 (en) | 2001-11-28 | 2001-11-28 | Specialized substrates for use in sequential lateral solidification processing |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002219913A1 true AU2002219913A1 (en) | 2003-06-10 |
Family
ID=21743030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002219913A Abandoned AU2002219913A1 (en) | 2001-11-28 | 2001-11-28 | Specialized substrates for use in sequential lateral solidification processing |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2002219913A1 (en) |
WO (1) | WO2003046965A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
KR20050047103A (en) | 2002-08-19 | 2005-05-19 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | A single-shot semiconductor processing system and method having various irradiation patterns |
CN1301535C (en) * | 2003-07-25 | 2007-02-21 | 友达光电股份有限公司 | Method for forming polysilicon layer on base plate |
WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
TW200942935A (en) | 2007-09-21 | 2009-10-16 | Univ Columbia | Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same |
CN101919058B (en) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | Systems and methods for preparation of epitaxially textured thick films |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639277A (en) * | 1984-07-02 | 1987-01-27 | Eastman Kodak Company | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material |
JPS62181419A (en) * | 1986-02-05 | 1987-08-08 | Nec Corp | Recrystallization method of polycrystalline silicon |
JPH0350720A (en) * | 1989-07-18 | 1991-03-05 | Seiko Epson Corp | Polycrystal silicon recrystallization |
JPH0433327A (en) * | 1990-05-30 | 1992-02-04 | Kyocera Corp | Forming method of semiconductor ctystallized film |
JP3240258B2 (en) * | 1996-03-21 | 2001-12-17 | シャープ株式会社 | Semiconductor device, thin film transistor and method for manufacturing the same, and liquid crystal display device and method for manufacturing the same |
KR100679877B1 (en) * | 1999-11-22 | 2007-02-07 | 소니 가부시끼 가이샤 | Functional device and method of manufacturing the same |
JP2001291850A (en) * | 2000-04-10 | 2001-10-19 | Hitachi Cable Ltd | Method for manufacturing crystalline silicon thin film |
-
2001
- 2001-11-28 WO PCT/US2001/044563 patent/WO2003046965A1/en not_active Application Discontinuation
- 2001-11-28 AU AU2002219913A patent/AU2002219913A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2003046965A1 (en) | 2003-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |