HK1042529B - 靜電屏蔽的射頻室冷卻系統和方法 - Google Patents
靜電屏蔽的射頻室冷卻系統和方法Info
- Publication number
- HK1042529B HK1042529B HK02102280.3A HK02102280A HK1042529B HK 1042529 B HK1042529 B HK 1042529B HK 02102280 A HK02102280 A HK 02102280A HK 1042529 B HK1042529 B HK 1042529B
- Authority
- HK
- Hong Kong
- Prior art keywords
- cooling system
- chamber cooling
- esrf
- esrf chamber
- cooling
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9503698P | 1998-08-03 | 1998-08-03 | |
PCT/US1999/017516 WO2000008229A1 (en) | 1998-08-03 | 1999-08-03 | Esrf chamber cooling system and process |
Publications (2)
Publication Number | Publication Date |
---|---|
HK1042529A1 HK1042529A1 (en) | 2002-08-16 |
HK1042529B true HK1042529B (zh) | 2004-04-23 |
Family
ID=22248867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02102280.3A HK1042529B (zh) | 1998-08-03 | 2002-03-26 | 靜電屏蔽的射頻室冷卻系統和方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6385977B1 (zh) |
EP (1) | EP1102869A4 (zh) |
JP (1) | JP2002522212A (zh) |
KR (1) | KR100634654B1 (zh) |
CN (1) | CN1131892C (zh) |
HK (1) | HK1042529B (zh) |
WO (1) | WO2000008229A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001241947A1 (en) * | 2000-03-02 | 2001-09-12 | Tokyo Electron Limited | Esrf source for ion plating epitaxial deposition |
US7088046B2 (en) * | 2002-09-30 | 2006-08-08 | Tokyo Electron Limited | Integrated process tube and electrostatic shield, assembly thereof and manufacture thereof |
FI20031331A (fi) * | 2003-09-17 | 2005-03-18 | Tomion Oy | Jäähdytetty plasmapoltin ja menetelmä polttimen jäähdyttämiseksi |
KR100749406B1 (ko) * | 2005-08-22 | 2007-08-14 | (주)에스이 플라즈마 | 불용방전 방지를 위한 전극 구조를 갖는 대기압 플라즈마발생장치 |
US8089025B2 (en) * | 2007-02-16 | 2012-01-03 | Hypertherm, Inc. | Gas-cooled plasma arc cutting torch |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
US8736177B2 (en) | 2010-09-30 | 2014-05-27 | Fei Company | Compact RF antenna for an inductively coupled plasma ion source |
JP2014509044A (ja) | 2011-02-03 | 2014-04-10 | テクナ・プラズマ・システムズ・インコーポレーテッド | 高性能誘導プラズマトーチ |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US9279722B2 (en) | 2012-04-30 | 2016-03-08 | Agilent Technologies, Inc. | Optical emission system including dichroic beam combiner |
US10662529B2 (en) * | 2016-01-05 | 2020-05-26 | Applied Materials, Inc. | Cooled gas feed block with baffle and nozzle for HDP-CVD |
JP7232262B2 (ja) * | 2018-04-27 | 2023-03-02 | ジェイティー インターナショナル エス.エイ. | 蒸気生成システム |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3686528A (en) * | 1969-12-05 | 1972-08-22 | Tamarack Scient Co Inc | Jet pinched plasma arc lamp and method of forming plasma arc |
JPS59170273A (ja) * | 1983-03-15 | 1984-09-26 | Nec Corp | プラズマエツチング装置 |
US5247152A (en) * | 1991-02-25 | 1993-09-21 | Blankenship George D | Plasma torch with improved cooling |
US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
-
1999
- 1999-08-03 KR KR1020017001430A patent/KR100634654B1/ko not_active IP Right Cessation
- 1999-08-03 EP EP99937746A patent/EP1102869A4/en not_active Withdrawn
- 1999-08-03 US US09/774,183 patent/US6385977B1/en not_active Expired - Fee Related
- 1999-08-03 JP JP2000563849A patent/JP2002522212A/ja not_active Withdrawn
- 1999-08-03 WO PCT/US1999/017516 patent/WO2000008229A1/en active IP Right Grant
- 1999-08-03 CN CN998103519A patent/CN1131892C/zh not_active Expired - Fee Related
-
2002
- 2002-03-26 HK HK02102280.3A patent/HK1042529B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1102869A1 (en) | 2001-05-30 |
KR100634654B1 (ko) | 2006-10-16 |
KR20010072203A (ko) | 2001-07-31 |
WO2000008229A1 (en) | 2000-02-17 |
JP2002522212A (ja) | 2002-07-23 |
CN1131892C (zh) | 2003-12-24 |
US6385977B1 (en) | 2002-05-14 |
HK1042529A1 (en) | 2002-08-16 |
EP1102869A4 (en) | 2006-12-13 |
CN1316021A (zh) | 2001-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20080803 |