HK1042529B - 靜電屏蔽的射頻室冷卻系統和方法 - Google Patents

靜電屏蔽的射頻室冷卻系統和方法

Info

Publication number
HK1042529B
HK1042529B HK02102280.3A HK02102280A HK1042529B HK 1042529 B HK1042529 B HK 1042529B HK 02102280 A HK02102280 A HK 02102280A HK 1042529 B HK1042529 B HK 1042529B
Authority
HK
Hong Kong
Prior art keywords
cooling system
chamber cooling
esrf
esrf chamber
cooling
Prior art date
Application number
HK02102280.3A
Other languages
English (en)
Other versions
HK1042529A1 (en
Inventor
韋恩‧L‧約翰遜
Original Assignee
東京電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京電子株式會社 filed Critical 東京電子株式會社
Publication of HK1042529A1 publication Critical patent/HK1042529A1/xx
Publication of HK1042529B publication Critical patent/HK1042529B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
HK02102280.3A 1998-08-03 2002-03-26 靜電屏蔽的射頻室冷卻系統和方法 HK1042529B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9503698P 1998-08-03 1998-08-03
PCT/US1999/017516 WO2000008229A1 (en) 1998-08-03 1999-08-03 Esrf chamber cooling system and process

Publications (2)

Publication Number Publication Date
HK1042529A1 HK1042529A1 (en) 2002-08-16
HK1042529B true HK1042529B (zh) 2004-04-23

Family

ID=22248867

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02102280.3A HK1042529B (zh) 1998-08-03 2002-03-26 靜電屏蔽的射頻室冷卻系統和方法

Country Status (7)

Country Link
US (1) US6385977B1 (zh)
EP (1) EP1102869A4 (zh)
JP (1) JP2002522212A (zh)
KR (1) KR100634654B1 (zh)
CN (1) CN1131892C (zh)
HK (1) HK1042529B (zh)
WO (1) WO2000008229A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001241947A1 (en) * 2000-03-02 2001-09-12 Tokyo Electron Limited Esrf source for ion plating epitaxial deposition
US7088046B2 (en) * 2002-09-30 2006-08-08 Tokyo Electron Limited Integrated process tube and electrostatic shield, assembly thereof and manufacture thereof
FI20031331A (fi) * 2003-09-17 2005-03-18 Tomion Oy Jäähdytetty plasmapoltin ja menetelmä polttimen jäähdyttämiseksi
KR100749406B1 (ko) * 2005-08-22 2007-08-14 (주)에스이 플라즈마 불용방전 방지를 위한 전극 구조를 갖는 대기압 플라즈마발생장치
US8089025B2 (en) * 2007-02-16 2012-01-03 Hypertherm, Inc. Gas-cooled plasma arc cutting torch
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2341525B1 (en) 2009-12-30 2013-10-23 FEI Company Plasma source for charged particle beam system
US8736177B2 (en) 2010-09-30 2014-05-27 Fei Company Compact RF antenna for an inductively coupled plasma ion source
JP2014509044A (ja) 2011-02-03 2014-04-10 テクナ・プラズマ・システムズ・インコーポレーテッド 高性能誘導プラズマトーチ
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
US9279722B2 (en) 2012-04-30 2016-03-08 Agilent Technologies, Inc. Optical emission system including dichroic beam combiner
US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
JP7232262B2 (ja) * 2018-04-27 2023-03-02 ジェイティー インターナショナル エス.エイ. 蒸気生成システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3686528A (en) * 1969-12-05 1972-08-22 Tamarack Scient Co Inc Jet pinched plasma arc lamp and method of forming plasma arc
JPS59170273A (ja) * 1983-03-15 1984-09-26 Nec Corp プラズマエツチング装置
US5247152A (en) * 1991-02-25 1993-09-21 Blankenship George D Plasma torch with improved cooling
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus

Also Published As

Publication number Publication date
EP1102869A1 (en) 2001-05-30
KR100634654B1 (ko) 2006-10-16
KR20010072203A (ko) 2001-07-31
WO2000008229A1 (en) 2000-02-17
JP2002522212A (ja) 2002-07-23
CN1131892C (zh) 2003-12-24
US6385977B1 (en) 2002-05-14
HK1042529A1 (en) 2002-08-16
EP1102869A4 (en) 2006-12-13
CN1316021A (zh) 2001-10-03

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20080803