HK1039173A1 - 測量薄膜，特別是半導體襯底上的感光樹脂薄膜的厚度的方法與裝置 - Google Patents

測量薄膜，特別是半導體襯底上的感光樹脂薄膜的厚度的方法與裝置

Info

Publication number
HK1039173A1
HK1039173A1 HK02100576.0A HK02100576A HK1039173A1 HK 1039173 A1 HK1039173 A1 HK 1039173A1 HK 02100576 A HK02100576 A HK 02100576A HK 1039173 A1 HK1039173 A1 HK 1039173A1
Authority
HK
Hong Kong
Prior art keywords
thickness
film
measuring
semiconductor substrate
light
Prior art date
Application number
HK02100576.0A
Other languages
English (en)
Inventor
奧夫‧杜-努爾
Original Assignee
特維特過程控制技術有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 特維特過程控制技術有限公司 filed Critical 特維特過程控制技術有限公司
Publication of HK1039173A1 publication Critical patent/HK1039173A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
HK02100576.0A 1998-08-27 2002-01-25 測量薄膜，特別是半導體襯底上的感光樹脂薄膜的厚度的方法與裝置 HK1039173A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL12596498A IL125964A (en) 1998-08-27 1998-08-27 Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
PCT/IL1999/000466 WO2000012958A1 (en) 1998-08-27 1999-08-26 Methods and apparatus for measuring the thickness of a film, particularly of a photoresist film on a semiconductor substrate

Publications (1)

Publication Number Publication Date
HK1039173A1 true HK1039173A1 (zh) 2002-04-12

Family

ID=11071900

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02100576.0A HK1039173A1 (zh) 1998-08-27 2002-01-25 測量薄膜，特別是半導體襯底上的感光樹脂薄膜的厚度的方法與裝置

Country Status (13)

Country Link
US (1) US6801321B1 (zh)
EP (1) EP1110054B1 (zh)
JP (1) JP2002523763A (zh)
KR (1) KR100694772B1 (zh)
CN (1) CN1151358C (zh)
AT (1) ATE280941T1 (zh)
AU (1) AU5385599A (zh)
CA (1) CA2341403A1 (zh)
DE (1) DE69921493T2 (zh)
HK (1) HK1039173A1 (zh)
IL (1) IL125964A (zh)
NO (1) NO20010910L (zh)
WO (1) WO2000012958A1 (zh)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL138193A0 (en) 2000-08-31 2001-10-31 Nova Measuring Instr Ltd A method and system for optical inspection of a structure formed with a surface relief
DE10045210A1 (de) * 2000-09-13 2002-05-02 Infineon Technologies Ag Verfahren und Vorrichtung zur Erfassung von auf einem Wafer aufgebrachten Schichten
US6762838B2 (en) * 2001-07-02 2004-07-13 Tevet Process Control Technologies Ltd. Method and apparatus for production line screening
IL144806A (en) 2001-08-08 2005-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in semiconductor manufacturing
KR100452918B1 (ko) * 2002-04-12 2004-10-14 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP4316853B2 (ja) 2002-10-09 2009-08-19 株式会社トプコン 表面検査方法および装置
US6885467B2 (en) 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
EP1467177A1 (en) * 2003-04-09 2004-10-13 Mitsubishi Chemical Engineering Corporation Method and apparatus for measuring thicknesses of layers of multilayer thin film
US7206076B2 (en) * 2003-11-04 2007-04-17 Lumetrics, Inc. Thickness measurement of moving webs and seal integrity system using dual interferometer
US20050211667A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Method and apparatus for measurement of thin films and residues on semiconductor substrates
KR100665936B1 (ko) * 2004-04-21 2007-01-09 주식회사 나래나노텍 박막 성형공정에서 코팅막 두께 검출장치 및 방법
EP1591750B1 (de) * 2004-04-26 2016-04-13 Applied Materials GmbH & Co. KG Verfahren und Vorrichtung zur Regelung der Dicke einer Beschichtung auf einem in seiner Längsrichtung bewegten Band
US7248350B2 (en) * 2004-04-27 2007-07-24 E. I. Du Pont De Nemours And Company Non-destructive method of determining the refractive index of clear coats
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7339682B2 (en) * 2005-02-25 2008-03-04 Verity Instruments, Inc. Heterodyne reflectometer for film thickness monitoring and method for implementing
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7406394B2 (en) * 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US7226339B2 (en) * 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
DE102005050432A1 (de) * 2005-10-21 2007-05-03 Rap.Id Particle Systems Gmbh Vorrichtung und Verfahren zur Charakterisierung von Gleitmittel und Hydrophobierungsfilmen in pharmazeutischen Behältnissen bezüglich Dicke und Homogenität
FR2898971A1 (fr) * 2006-03-27 2007-09-28 Commissariat Energie Atomique Procede de mesure, sans contact, d'une caracteristique opto-geometrique d'un materiau, par spectrometrie interferentielle
US7372579B2 (en) * 2006-04-20 2008-05-13 Infineon Technologies, Ag Apparatus and method for monitoring trench profiles and for spectrometrologic analysis
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
TWI445098B (zh) * 2007-02-23 2014-07-11 Applied Materials Inc 使用光譜來判斷研磨終點
US7952708B2 (en) * 2007-04-02 2011-05-31 Applied Materials, Inc. High throughput measurement system
KR100930383B1 (ko) * 2007-06-13 2009-12-08 주식회사 하이닉스반도체 포토마스크의 패턴 선폭 측정 방법
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
CN102171000A (zh) * 2008-10-01 2011-08-31 彼特沃尔特斯有限公司 用于测量片状工件的厚度的方法
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
JP5968783B2 (ja) 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
JP5681453B2 (ja) * 2010-11-08 2015-03-11 株式会社ディスコ 測定方法および測定装置
NL2009273A (en) * 2011-08-31 2013-03-04 Asml Netherlands Bv Level sensor arrangement for lithographic apparatus, lithographic apparatus and device manufacturing method.
SG11201502436SA (en) * 2012-09-28 2015-04-29 Rudolph Technologies Inc Inspection of substrates using calibration and imaging
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
TWI499756B (zh) * 2013-05-10 2015-09-11 Ind Tech Res Inst 接合層的厚度量測系統與方法
GB201319559D0 (en) * 2013-11-06 2013-12-18 Pilkington Group Ltd In-process monitoring of coatings on glass articles
US20150253127A1 (en) * 2014-03-04 2015-09-10 Honeywell Asca Inc. Thickness Determination of Web Product by Mid-infrared Wavelength Scanning Interferometry
FR3026484B1 (fr) * 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
CN105136047B (zh) * 2015-05-28 2017-12-19 清华大学深圳研究生院 原位测量薄膜厚度变化的设备和方法
CN105784618B (zh) * 2016-04-27 2019-01-01 上海理工大学 一种非透射固体表面上溶液液膜参数测量装置及方法
CN106441125B (zh) * 2016-11-01 2019-03-19 淮阴师范学院 一种薄膜厚度测量方法及系统
JP6333351B1 (ja) * 2016-12-27 2018-05-30 Ntn株式会社 測定装置、塗布装置、および膜厚測定方法
CN108571933A (zh) * 2017-03-07 2018-09-25 台濠科技股份有限公司 运用近红外线量测晶圆厚度的方法
TW201923332A (zh) 2017-10-10 2019-06-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡方法和設備、電腦程式及微影系統
CN111279147A (zh) * 2017-11-01 2020-06-12 柯尼卡美能达株式会社 膜厚测定方法、膜厚测定系统、光反射膜的制造方法及光反射膜的制造系统
KR102369936B1 (ko) * 2017-12-08 2022-03-03 삼성전자주식회사 광학 측정 방법
US20200033723A1 (en) * 2018-07-30 2020-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Manufacturing Apparatus and Method Thereof
CN112747681A (zh) * 2019-10-31 2021-05-04 佳陞科技有限公司 一种非破坏性光学检测系统
CN110986801A (zh) * 2019-11-15 2020-04-10 富泰华精密电子（郑州）有限公司 检测装置、检测设备及检测方法
CN111238384A (zh) * 2020-02-27 2020-06-05 无锡市振华开祥科技有限公司 一种薄不锈钢零件镀层定性测厚方法
CN112729133B (zh) * 2020-12-18 2023-02-24 广东省大湾区集成电路与系统应用研究院 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置
US20240027916A1 (en) * 2022-07-21 2024-01-25 Applied Materials, Inc. Fingerprinting and process control of photosensitive film deposition chamber

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660979A (en) 1984-08-17 1987-04-28 At&T Technologies, Inc. Method and apparatus for automatically measuring semiconductor etching process parameters
JPS6271804A (ja) 1985-09-26 1987-04-02 Nippon Kogaku Kk <Nikon> 膜厚測定装置
US4787749A (en) 1985-11-28 1988-11-29 Canon Kabushiki Kaisha Method and apparatus for measuring the thickness of a thin film using the spectral reflection factor of the film
US4841156A (en) 1987-05-15 1989-06-20 Electronic Instrumentation And Technology, Inc. Measurement of the thickness of thin films
US4909631A (en) * 1987-12-18 1990-03-20 Tan Raul Y Method for film thickness and refractive index determination
JPH01304304A (ja) 1988-05-31 1989-12-07 Shimadzu Corp 膜厚検査装置
JPH0252205A (ja) * 1988-08-17 1990-02-21 Dainippon Screen Mfg Co Ltd 膜厚測定方法
US5227861A (en) * 1989-09-25 1993-07-13 Mitsubishi Denki Kabushiki Kaisha Apparatus for and method of evaluating multilayer thin film
EP0451329B1 (en) * 1990-04-13 1998-01-28 Hitachi, Ltd. Controlling method of the thickness of a thin film when forming that film
US5381442A (en) 1993-04-01 1995-01-10 Massachusetts Institute Of Technology Coherent Fourier transform radiometer for determining the thickness distribution of an oil film on a body of water based on the brightness temperature of the oil film and water over a range of radiation frequencies
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JPH07294220A (ja) 1994-04-27 1995-11-10 Mitsubishi Chem Corp 多層薄膜の膜厚検出方法および装置
US5600441A (en) 1995-01-31 1997-02-04 Zygo Corporation Interferometer and method for measuring the distance of an object surface with respect to the surface of a rotating disk
EP0756318A1 (en) * 1995-07-24 1997-01-29 International Business Machines Corporation Method for real-time in-situ monitoring of a trench formation process
JP3577840B2 (ja) * 1996-05-22 2004-10-20 株式会社デンソー 半導体厚測定装置及びその測定方法
US5744814A (en) 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface

Also Published As

Publication number Publication date
NO20010910L (no) 2001-04-27
CA2341403A1 (en) 2000-03-09
EP1110054A1 (en) 2001-06-27
US6801321B1 (en) 2004-10-05
DE69921493D1 (de) 2004-12-02
JP2002523763A (ja) 2002-07-30
KR100694772B1 (ko) 2007-03-13
ATE280941T1 (de) 2004-11-15
EP1110054A4 (en) 2001-10-31
IL125964A0 (en) 1999-04-11
EP1110054B1 (en) 2004-10-27
WO2000012958A1 (en) 2000-03-09
CN1314991A (zh) 2001-09-26
CN1151358C (zh) 2004-05-26
KR20010072848A (ko) 2001-07-31
AU5385599A (en) 2000-03-21
IL125964A (en) 2003-10-31
NO20010910D0 (no) 2001-02-23
DE69921493T2 (de) 2006-02-02

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