HK1033292A1 - Apparatus and method for adjusting density distribution of a plasma - Google Patents

Apparatus and method for adjusting density distribution of a plasma

Info

Publication number
HK1033292A1
HK1033292A1 HK01103905A HK01103905A HK1033292A1 HK 1033292 A1 HK1033292 A1 HK 1033292A1 HK 01103905 A HK01103905 A HK 01103905A HK 01103905 A HK01103905 A HK 01103905A HK 1033292 A1 HK1033292 A1 HK 1033292A1
Authority
HK
Hong Kong
Prior art keywords
plasma
density distribution
adjusting density
adjusting
distribution
Prior art date
Application number
HK01103905A
Other languages
English (en)
Inventor
Wayne L Johnson
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of HK1033292A1 publication Critical patent/HK1033292A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
HK01103905A 1997-10-15 2001-06-06 Apparatus and method for adjusting density distribution of a plasma HK1033292A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6185697P 1997-10-15 1997-10-15
PCT/US1998/021622 WO1999019526A2 (en) 1997-10-15 1998-10-15 Apparatus and method for adjusting density distribution of a plasma

Publications (1)

Publication Number Publication Date
HK1033292A1 true HK1033292A1 (en) 2001-08-24

Family

ID=22038584

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01103905A HK1033292A1 (en) 1997-10-15 2001-06-06 Apparatus and method for adjusting density distribution of a plasma

Country Status (7)

Country Link
US (1) US6339206B1 (xx)
EP (1) EP1029099A2 (xx)
JP (1) JP2001520452A (xx)
KR (1) KR20010024504A (xx)
CN (1) CN1102087C (xx)
HK (1) HK1033292A1 (xx)
WO (1) WO1999019526A2 (xx)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001083852A1 (en) * 2000-04-28 2001-11-08 Tokyo Electron Limited Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
US7227097B2 (en) * 2002-05-08 2007-06-05 Btu International, Inc. Plasma generation and processing with multiple radiation sources
US20030047536A1 (en) * 2002-10-02 2003-03-13 Johnson Wayne L. Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
US6822185B2 (en) * 2002-10-08 2004-11-23 Applied Materials, Inc. Temperature controlled dome-coil system for high power inductively coupled plasma systems
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
US7138187B2 (en) * 2004-03-19 2006-11-21 Younger Mfg. Co. Polyvinyl alcohol-based film exhibiting improved adhesion
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US7713432B2 (en) 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20070068795A1 (en) * 2005-09-26 2007-03-29 Jozef Brcka Hollow body plasma uniformity adjustment device and method
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
WO2008009889A1 (en) * 2006-07-20 2008-01-24 Aviza Technology Limited Ion deposition apparatus
EP2044610B1 (en) * 2006-07-20 2012-11-28 SPP Process Technology Systems UK Limited Plasma sources
US8354652B2 (en) * 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20100243165A1 (en) * 2007-11-01 2010-09-30 Pyung-Yong Um Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
FR2971665B1 (fr) 2011-02-11 2014-06-20 Efd Induction Sa Torche a plasma inductif
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9095038B2 (en) * 2011-10-19 2015-07-28 Advanced Micro-Fabrication Equipment, Inc. Asia ICP source design for plasma uniformity and efficiency enhancement
CN103796413B (zh) * 2012-11-01 2017-05-03 中微半导体设备(上海)有限公司 等离子反应器及制作半导体基片的方法
CN103959918B (zh) * 2011-11-17 2017-10-03 朗姆研究公司 分布式多区等离子体源的系统、方法及设备
CN104871297B (zh) * 2012-09-27 2017-07-18 Spp科技股份有限公司 等离子蚀刻装置
CN105088176B (zh) * 2014-05-20 2018-03-09 北京北方华创微电子装备有限公司 一种预清洗腔室及半导体加工设备
CN105710509B (zh) * 2016-04-13 2018-02-13 青岛双瑞海洋环境工程股份有限公司 防止铁阳极与铜合金法兰间产生缝隙腐蚀的焊接密封方法

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US4828369A (en) * 1986-05-28 1989-05-09 Minolta Camera Kabushiki Kaisha Electrochromic device
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5346578A (en) 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
KR100321325B1 (ko) * 1993-09-17 2002-06-20 가나이 쓰도무 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치
US5777289A (en) * 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6019848A (en) * 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5824607A (en) 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US6156164A (en) * 1999-06-22 2000-12-05 Tokyo Electron Limited Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing

Also Published As

Publication number Publication date
JP2001520452A (ja) 2001-10-30
US6339206B1 (en) 2002-01-15
CN1102087C (zh) 2003-02-26
CN1275937A (zh) 2000-12-06
WO1999019526A3 (en) 1999-07-01
EP1029099A2 (en) 2000-08-23
WO1999019526A2 (en) 1999-04-22
KR20010024504A (ko) 2001-03-26

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20081015