HK1030998A1 - Method and apparatus for correcting a multilevel cell memory by using interleaving - Google Patents
Method and apparatus for correcting a multilevel cell memory by using interleavingInfo
- Publication number
- HK1030998A1 HK1030998A1 HK01100356A HK01100356A HK1030998A1 HK 1030998 A1 HK1030998 A1 HK 1030998A1 HK 01100356 A HK01100356 A HK 01100356A HK 01100356 A HK01100356 A HK 01100356A HK 1030998 A1 HK1030998 A1 HK 1030998A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- interleaving
- correcting
- cell memory
- multilevel cell
- multilevel
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/708,212 US5754566A (en) | 1996-09-06 | 1996-09-06 | Method and apparatus for correcting a multilevel cell memory by using interleaving |
PCT/US1997/015607 WO1998010425A1 (fr) | 1996-09-06 | 1997-09-05 | Procede et appareil servant a corriger la memoire de cellules multiniveau a l'aide de l'entrelacement |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1030998A1 true HK1030998A1 (en) | 2001-05-25 |
Family
ID=24844844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK01100356A HK1030998A1 (en) | 1996-09-06 | 2001-01-12 | Method and apparatus for correcting a multilevel cell memory by using interleaving |
Country Status (9)
Country | Link |
---|---|
US (1) | US5754566A (fr) |
EP (1) | EP1019821B1 (fr) |
KR (1) | KR100327883B1 (fr) |
CN (1) | CN1161791C (fr) |
AU (1) | AU4251697A (fr) |
DE (1) | DE69721076T2 (fr) |
HK (1) | HK1030998A1 (fr) |
TW (1) | TW364111B (fr) |
WO (1) | WO1998010425A1 (fr) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002614A (en) | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
US6353554B1 (en) * | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
US5787484A (en) | 1996-08-08 | 1998-07-28 | Micron Technology, Inc. | System and method which compares data preread from memory cells to data to be written to the cells |
US6857099B1 (en) * | 1996-09-18 | 2005-02-15 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
US5754567A (en) * | 1996-10-15 | 1998-05-19 | Micron Quantum Devices, Inc. | Write reduction in flash memory systems through ECC usage |
US6269403B1 (en) * | 1997-06-30 | 2001-07-31 | Microsoft Corporation | Browser and publisher for multimedia object storage, retrieval and transfer |
US6604144B1 (en) | 1997-06-30 | 2003-08-05 | Microsoft Corporation | Data format for multimedia object storage, retrieval and transfer |
JP3165101B2 (ja) * | 1998-03-05 | 2001-05-14 | 日本電気アイシーマイコンシステム株式会社 | 多値式半導体メモリ装置およびその不良救済方法 |
DE69907622T2 (de) | 1999-02-10 | 2004-03-25 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Fehlerkorrektur in einem in einer Mehrpegelspeicherzelle gespeicherten Binärwort, mit einer Minimumanzahl von Korrekturbits |
JP4074029B2 (ja) * | 1999-06-28 | 2008-04-09 | 株式会社東芝 | フラッシュメモリ |
US6487685B1 (en) * | 1999-09-30 | 2002-11-26 | Silicon Graphics, Inc. | System and method for minimizing error correction code bits in variable sized data formats |
IT1321049B1 (it) * | 2000-11-07 | 2003-12-30 | St Microelectronics Srl | Metodo di costruzione di un codice a controllo dell'errore polivalenteper celle di memoria multilivello funzionanti a un numero variabile di |
ITTO20010529A1 (it) * | 2001-06-01 | 2002-12-01 | St Microelectronics Srl | Metodo di controllo dell'errore in celle di memoria multilivello con numero di bit memorizzati configurabile. |
US6483743B1 (en) * | 2001-06-18 | 2002-11-19 | Intel Corporation | Multilevel cell memory architecture |
JP4437519B2 (ja) * | 2001-08-23 | 2010-03-24 | スパンション エルエルシー | 多値セルメモリ用のメモリコントローラ |
JP4856848B2 (ja) | 2001-10-11 | 2012-01-18 | アルテラ コーポレイション | プログラマブルロジックリソース上のエラー検出 |
ITMI20022634A1 (it) * | 2002-12-13 | 2004-06-14 | St Microelectronics Srl | Dispositivo elettronico integrato e metodo |
ITMI20022669A1 (it) * | 2002-12-18 | 2004-06-19 | Simicroelectronics S R L | Struttura e metodo di rilevamento errori in un dispositivo |
TWI309776B (en) * | 2003-10-24 | 2009-05-11 | Hon Hai Prec Ind Co Ltd | Secure storage system and method for solid memory |
CN100468367C (zh) * | 2003-10-29 | 2009-03-11 | 鸿富锦精密工业(深圳)有限公司 | 固态存储器的安全存储系统及方法 |
US7328377B1 (en) | 2004-01-27 | 2008-02-05 | Altera Corporation | Error correction for programmable logic integrated circuits |
US7409623B2 (en) * | 2004-11-04 | 2008-08-05 | Sigmatel, Inc. | System and method of reading non-volatile computer memory |
US7447948B2 (en) * | 2005-11-21 | 2008-11-04 | Intel Corporation | ECC coding for high speed implementation |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7639531B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US7613043B2 (en) | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7639542B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7701797B2 (en) | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7852690B2 (en) | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7551486B2 (en) | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7511646B2 (en) | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
KR100845529B1 (ko) | 2007-01-03 | 2008-07-10 | 삼성전자주식회사 | 플래시 메모리 장치의 이씨씨 제어기 및 그것을 포함한메모리 시스템 |
US7492287B2 (en) * | 2007-05-23 | 2009-02-17 | Micron Technology, Inc. | Two-bit tri-level forced transition encoding |
KR101506655B1 (ko) * | 2008-05-15 | 2015-03-30 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 오류 관리 방법 |
KR101403314B1 (ko) | 2008-05-23 | 2014-06-05 | 삼성전자주식회사 | 메모리 장치 및 데이터 비트 저장 방법 |
US8583986B2 (en) * | 2008-12-17 | 2013-11-12 | Seagate Technology Llc | Solid-state memory with error correction coding |
KR101616100B1 (ko) * | 2009-09-25 | 2016-04-28 | 삼성전자주식회사 | 메모리 시스템 및 그것의 동작 방법 |
KR101623730B1 (ko) * | 2009-11-23 | 2016-05-25 | 삼성전자주식회사 | 인터리버 장치 |
US9195540B2 (en) * | 2010-10-06 | 2015-11-24 | HGST, Inc. | Multiple sector parallel access memory array with error correction |
US8972821B2 (en) * | 2010-12-23 | 2015-03-03 | Texas Instruments Incorporated | Encode and multiplex, register, and decode and error correction circuitry |
US11150839B2 (en) | 2019-12-19 | 2021-10-19 | Western Digital Technologies, Inc. | Host and method for interleaving data in a storage system for enhanced quality of service |
US11221950B2 (en) | 2019-12-19 | 2022-01-11 | Western Digital Technologies, Inc. | Storage system and method for interleaving data for enhanced quality of service |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3485595D1 (de) * | 1983-12-23 | 1992-04-23 | Hitachi Ltd | Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln. |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
CA2019351A1 (fr) * | 1989-07-06 | 1991-01-06 | Francis H. Reiff | Memoire insensible aux defaillances |
US5450363A (en) * | 1994-06-02 | 1995-09-12 | Intel Corporation | Gray coding for a multilevel cell memory system |
US5475693A (en) * | 1994-12-27 | 1995-12-12 | Intel Corporation | Error management processes for flash EEPROM memory arrays |
-
1996
- 1996-09-06 US US08/708,212 patent/US5754566A/en not_active Expired - Fee Related
-
1997
- 1997-09-05 EP EP97940827A patent/EP1019821B1/fr not_active Expired - Lifetime
- 1997-09-05 CN CNB97199384XA patent/CN1161791C/zh not_active Expired - Fee Related
- 1997-09-05 DE DE69721076T patent/DE69721076T2/de not_active Expired - Lifetime
- 1997-09-05 AU AU42516/97A patent/AU4251697A/en not_active Abandoned
- 1997-09-05 WO PCT/US1997/015607 patent/WO1998010425A1/fr active IP Right Grant
- 1997-09-05 KR KR1019997001918A patent/KR100327883B1/ko not_active IP Right Cessation
- 1997-09-06 TW TW086112987A patent/TW364111B/zh not_active IP Right Cessation
-
2001
- 2001-01-12 HK HK01100356A patent/HK1030998A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1235691A (zh) | 1999-11-17 |
DE69721076D1 (de) | 2003-05-22 |
EP1019821B1 (fr) | 2003-04-16 |
TW364111B (en) | 1999-07-11 |
KR100327883B1 (ko) | 2002-05-22 |
US5754566A (en) | 1998-05-19 |
WO1998010425A1 (fr) | 1998-03-12 |
KR20000068504A (ko) | 2000-11-25 |
EP1019821A1 (fr) | 2000-07-19 |
CN1161791C (zh) | 2004-08-11 |
DE69721076T2 (de) | 2003-11-06 |
AU4251697A (en) | 1998-03-26 |
EP1019821A4 (fr) | 2000-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20100905 |