HK1027440A1 - Semiconductor laser with a mesa structure - Google Patents

Semiconductor laser with a mesa structure

Info

Publication number
HK1027440A1
HK1027440A1 HK00106430A HK00106430A HK1027440A1 HK 1027440 A1 HK1027440 A1 HK 1027440A1 HK 00106430 A HK00106430 A HK 00106430A HK 00106430 A HK00106430 A HK 00106430A HK 1027440 A1 HK1027440 A1 HK 1027440A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor laser
mesa structure
mesa
laser
semiconductor
Prior art date
Application number
HK00106430A
Other languages
English (en)
Inventor
Bjorn Stoltz
Ulf Ohlander
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1027440A1 publication Critical patent/HK1027440A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
HK00106430A 1997-03-14 2000-10-10 Semiconductor laser with a mesa structure HK1027440A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9700931A SE9700931D0 (sv) 1997-03-14 1997-03-14 Buried heterostructure laser
PCT/SE1998/000416 WO1998042051A1 (fr) 1997-03-14 1998-03-06 Laser a confinement lateral

Publications (1)

Publication Number Publication Date
HK1027440A1 true HK1027440A1 (en) 2001-01-12

Family

ID=20406159

Family Applications (1)

Application Number Title Priority Date Filing Date
HK00106430A HK1027440A1 (en) 1997-03-14 2000-10-10 Semiconductor laser with a mesa structure

Country Status (10)

Country Link
EP (1) EP0966778B1 (fr)
JP (1) JP2001515659A (fr)
KR (1) KR20000076262A (fr)
CN (1) CN1090831C (fr)
AU (1) AU6428398A (fr)
CA (1) CA2283233C (fr)
DE (1) DE69825870T2 (fr)
HK (1) HK1027440A1 (fr)
SE (1) SE9700931D0 (fr)
WO (1) WO1998042051A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159299A (ja) * 2003-10-30 2005-06-16 Sharp Corp 半導体発光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
CA1218136A (fr) * 1983-01-17 1987-02-17 Toshihiro Kawano Dispositif laser a semiconducteur
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
JP2561163B2 (ja) * 1990-02-28 1996-12-04 富士通株式会社 メサ埋め込み型光半導体装置の製造方法
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
CN1090831C (zh) 2002-09-11
CA2283233C (fr) 2005-08-16
DE69825870T2 (de) 2005-09-01
CN1250551A (zh) 2000-04-12
JP2001515659A (ja) 2001-09-18
SE9700931D0 (sv) 1997-03-14
EP0966778B1 (fr) 2004-08-25
EP0966778A1 (fr) 1999-12-29
WO1998042051A1 (fr) 1998-09-24
KR20000076262A (ko) 2000-12-26
AU6428398A (en) 1998-10-12
CA2283233A1 (fr) 1998-09-24
DE69825870D1 (de) 2004-09-30

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160306