HK1020287A1 - A sputtering station and a vacuum surface treatment system - Google Patents

A sputtering station and a vacuum surface treatment system

Info

Publication number
HK1020287A1
HK1020287A1 HK99105430A HK99105430A HK1020287A1 HK 1020287 A1 HK1020287 A1 HK 1020287A1 HK 99105430 A HK99105430 A HK 99105430A HK 99105430 A HK99105430 A HK 99105430A HK 1020287 A1 HK1020287 A1 HK 1020287A1
Authority
HK
Hong Kong
Prior art keywords
chamber
sputtering
sputtering station
sputter source
axis
Prior art date
Application number
HK99105430A
Inventor
Roman Schertler
Original Assignee
Unaxis Balzer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE29716440U external-priority patent/DE29716440U1/en
Application filed by Unaxis Balzer Ag filed Critical Unaxis Balzer Ag
Publication of HK1020287A1 publication Critical patent/HK1020287A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Robotics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Spray Control Apparatus (AREA)

Abstract

The sputtering station for disk-shaped workpieces includes an airlock chamber (3), a sputter source (7) with a working surface (7a), a transport chamber (1) with openings respectively into the airlock chamber and to the sputter source for transfer of a workpiece (23), and a transport unit (13). The airlock chamber (3) and the working surface (7a) of the sputter source lie on the same lateral axis (Q) and face one another on opposite sides of the transport chamber. The transport unit (13) is pivotably driven about an axis (A1) which is oriented perpendicular to the axis (Q) and jointly with the latter defines a vertical plane (E). The unit (13) is provided with at least one radially extendable/retractable carrier arm (19) with a workpiece seating (21). Also claimed is a sputtering installation incorporating such a sputtering station.
HK99105430A 1997-09-12 1999-11-24 A sputtering station and a vacuum surface treatment system HK1020287A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE29716440U DE29716440U1 (en) 1997-09-12 1997-09-12 Sputtering station

Publications (1)

Publication Number Publication Date
HK1020287A1 true HK1020287A1 (en) 2000-04-07

Family

ID=27771784

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99105430A HK1020287A1 (en) 1997-09-12 1999-11-24 A sputtering station and a vacuum surface treatment system

Country Status (4)

Country Link
CH (1) CH693508A5 (en)
HK (1) HK1020287A1 (en)
NL (1) NL1010046C2 (en)
SE (1) SE521639C2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160139A (en) * 1984-01-30 1985-08-21 Fujitsu Ltd Shifting process
US4857160A (en) * 1988-07-25 1989-08-15 Oerlikon-Buhrle U.S.A. Inc. High vacuum processing system and method
DE4117969C2 (en) * 1991-05-31 2000-11-09 Balzers Ag Liechtenstein Vacuum chamber
GB2272225B (en) * 1992-10-06 1996-07-17 Balzers Hochvakuum A method for masking a workpiece and a vacuum treatment facility
DE4427984C2 (en) * 1994-08-08 2003-07-03 Unaxis Deutschland Holding Device for feeding in and out of workpieces in a coating chamber
NL1000138C2 (en) * 1995-04-13 1996-10-15 Od & Me Bv Substrate processing devices as well as methods suitable for use with such devices.

Also Published As

Publication number Publication date
SE521639C2 (en) 2003-11-18
SE9803067L (en) 1999-03-13
NL1010046A1 (en) 1999-03-15
SE9803067D0 (en) 1998-09-10
NL1010046C2 (en) 2004-08-17
CH693508A5 (en) 2003-09-15

Similar Documents

Publication Publication Date Title
WO1999028951A3 (en) Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
TW336328B (en) Wafer position error detection and correction system
ATE183245T1 (en) MAGNETRON SPUTTING SYSTEM AND METHOD
TW336329B (en) Semiconductor processing coating method and the coating device
AU4632993A (en) Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd
ES2036956A1 (en) Method and apparatus for the coating of substrates
EP0555891A3 (en) Vacuum processing system
ATE187985T1 (en) DEVICE FOR HEAT TREATMENT OF METAL WORKPIECES UNDER VACUUM
WO1998053486A3 (en) Aluminum deposition shield
EP0516436A3 (en) Sputtering device
WO1996017971B1 (en) Sputtering apparatus having an on board service module
HK1020287A1 (en) A sputtering station and a vacuum surface treatment system
EP1006006A3 (en) System for carrying engraveable workpieces of different configurations
TW372926B (en) Method and system of processing semiconductor workpieces and robot for use in said system
EP1050602A3 (en) Process chamber with inner support
EP0855258A3 (en) Rotational moulding plant
GB2296698B (en) A chamber combination for the transport of workpieces in a vacuum atmosphere
AU4936196A (en) Plasma chamber
SE0004277L (en) Procedure and systems for arc evaporation under vacuum and cutting tools for rotary machining
GB2271542B (en) A chamber and a chamber combination for a vacuum facility and a method for transporting through at least one workpiece
MX9407877A (en) Solid culture substrate including barley.
MY104621A (en) Method and apparatus for coating graphite on cathode ray tube.
EP0620078A3 (en) Device for automatically supplying, charging and evacuating workpieces onto machine tools.
CA2059094A1 (en) High ratio planetary drive system for vacuum chamber
CA2242427A1 (en) Loading device for a plate press

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090914