HK1007453A1 - Thermal annealing of semiconductor devices - Google Patents

Thermal annealing of semiconductor devices

Info

Publication number
HK1007453A1
HK1007453A1 HK98106542A HK98106542A HK1007453A1 HK 1007453 A1 HK1007453 A1 HK 1007453A1 HK 98106542 A HK98106542 A HK 98106542A HK 98106542 A HK98106542 A HK 98106542A HK 1007453 A1 HK1007453 A1 HK 1007453A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor devices
thermal annealing
annealing
thermal
semiconductor
Prior art date
Application number
HK98106542A
Other languages
English (en)
Inventor
Henri Gay
Denis Griot
Irenee Pages
Original Assignee
Motorola Semiconducteurs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs filed Critical Motorola Semiconducteurs
Publication of HK1007453A1 publication Critical patent/HK1007453A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
HK98106542A 1990-12-20 1998-06-25 Thermal annealing of semiconductor devices HK1007453A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9016040A FR2670950B1 (fr) 1990-12-20 1990-12-20 Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.

Publications (1)

Publication Number Publication Date
HK1007453A1 true HK1007453A1 (en) 1999-04-09

Family

ID=9403487

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98106542A HK1007453A1 (en) 1990-12-20 1998-06-25 Thermal annealing of semiconductor devices

Country Status (6)

Country Link
US (1) US5284795A (fr)
EP (1) EP0498055B1 (fr)
JP (1) JP2653304B2 (fr)
DE (1) DE69124686T2 (fr)
FR (1) FR2670950B1 (fr)
HK (1) HK1007453A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2747840B1 (fr) * 1996-04-22 1998-09-11 Motorola Semiconducteurs Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe
US5861335A (en) * 1997-03-21 1999-01-19 Advanced Micro Devices, Inc. Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability
US6051865A (en) * 1998-11-09 2000-04-18 Advanced Micro Devices, Inc. Transistor having a barrier layer below a high permittivity gate dielectric
CN1947660B (zh) * 2005-10-14 2010-09-29 通用电气公司 用于多管芯背光照明二极管的系统、方法和模块组件
US7967775B2 (en) * 2007-01-09 2011-06-28 Alcon, Inc. Irrigation/aspiration tip

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273950A (en) * 1979-05-29 1981-06-16 Photowatt International, Inc. Solar cell and fabrication thereof using microwaves
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
GB2106709B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
JPS5928334A (ja) * 1982-08-10 1984-02-15 Toshiba Corp 半導体製造装置
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
JPS6285427A (ja) * 1985-10-09 1987-04-18 Fujitsu Ltd 半導体装置の熱処理方法

Also Published As

Publication number Publication date
EP0498055B1 (fr) 1997-02-12
JP2653304B2 (ja) 1997-09-17
FR2670950B1 (fr) 1993-04-16
JPH04314330A (ja) 1992-11-05
DE69124686T2 (de) 1997-08-14
EP0498055A1 (fr) 1992-08-12
FR2670950A1 (fr) 1992-06-26
US5284795A (en) 1994-02-08
DE69124686D1 (de) 1997-03-27

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20051128