GR3002061T3 - Reagent source for molecular beam epitaxy - Google Patents

Reagent source for molecular beam epitaxy

Info

Publication number
GR3002061T3
GR3002061T3 GR91400727T GR910400727T GR3002061T3 GR 3002061 T3 GR3002061 T3 GR 3002061T3 GR 91400727 T GR91400727 T GR 91400727T GR 910400727 T GR910400727 T GR 910400727T GR 3002061 T3 GR3002061 T3 GR 3002061T3
Authority
GR
Greece
Prior art keywords
metal organic
molecular beam
beam epitaxy
source
reagent source
Prior art date
Application number
GR91400727T
Other languages
Greek (el)
Inventor
Christopher George Tuppen
David Arthur Andrews
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Publication of GR3002061T3 publication Critical patent/GR3002061T3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Saccharide Compounds (AREA)
  • Steroid Compounds (AREA)
  • Luminescent Compositions (AREA)

Abstract

A source assembly adapted to provide one or more metal organic compounds into an MBE reaction chamber wherein the source assembly comprises a mixer manifold which has one or more inlet connectors for providing the metal organic compounds. Each inlet connector includes a resistance valve for defining a flow rate of vapour of the metal organic compound under a pre-set pressure gradient and an on/off valve for selecting the operational status of the source. Preferably the mixer manifold acts as a collimator which avoids the need to fit a rotating substrate.
GR91400727T 1987-04-08 1991-06-06 Reagent source for molecular beam epitaxy GR3002061T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878708436A GB8708436D0 (en) 1987-04-08 1987-04-08 Reagent source

Publications (1)

Publication Number Publication Date
GR3002061T3 true GR3002061T3 (en) 1992-12-30

Family

ID=10615480

Family Applications (1)

Application Number Title Priority Date Filing Date
GR91400727T GR3002061T3 (en) 1987-04-08 1991-06-06 Reagent source for molecular beam epitaxy

Country Status (9)

Country Link
US (1) US5122393A (en)
EP (1) EP0286274B1 (en)
JP (1) JPS63272026A (en)
AT (1) ATE64159T1 (en)
CA (1) CA1325371C (en)
DE (1) DE3863114D1 (en)
ES (1) ES2022614B3 (en)
GB (1) GB8708436D0 (en)
GR (1) GR3002061T3 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364654A (en) * 1990-06-14 1994-11-15 Idemitsu Kosan Co., Ltd. Process for production of a thin film electrode and an electroluminescence device
US5677927A (en) * 1994-09-20 1997-10-14 Pulson Communications Corporation Ultrawide-band communication system and method
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US20050109281A1 (en) * 2002-03-22 2005-05-26 Holger Jurgensen Process for coating a substrate, and apparatus for carrying out the process
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
TWI413149B (en) * 2008-01-22 2013-10-21 Semequip Inc Ion source gas reactor and method for converting a gaseous feed materital into a different molecular or atomic species
JP2009239082A (en) * 2008-03-27 2009-10-15 Tokyo Electron Ltd Gas feeding device, treating device, and treating method
EP2168643A1 (en) * 2008-09-29 2010-03-31 Applied Materials, Inc. Evaporator for organic materials
US20230399767A1 (en) * 2022-06-13 2023-12-14 Paul Colombo Systems and methods for pulsed beam deposition of epitaxial crystal layers

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393013A (en) * 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US4314837A (en) * 1979-03-01 1982-02-09 Corning Glass Works Reactant delivery system method
GB2062013B (en) * 1979-10-31 1984-07-04 Ni I Edxperimental Inst Avtomo Coating reflecting surfaces with organic layer by glow discharge
JPS57173933A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Growing method for molecular beam
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
JPS6042813A (en) * 1983-08-19 1985-03-07 Nippon Telegr & Teleph Corp <Ntt> Method and device for epitaxial crystal growth
GB2156857B (en) * 1983-11-30 1987-01-14 Philips Electronic Associated Method of manufacturing a semiconductor device
AU563417B2 (en) * 1984-02-07 1987-07-09 Nippon Telegraph & Telephone Public Corporation Optical fibre manufacture
FR2569207B1 (en) * 1984-08-14 1986-11-14 Mellet Robert PROCESS AND DEVICE FOR OBTAINING A GAS STREAM CONTAINING A VAPOR COMPOUND, IN PARTICULAR USABLE FOR INTRODUCING THIS COMPOUND INTO AN EPITAXY REACTOR
JPS6194319A (en) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd Evaporator of volatile matter
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
JPS61187226A (en) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd Vapor growth apparatus
JPS61187229A (en) * 1985-02-14 1986-08-20 Sumitomo Electric Ind Ltd Semiconductor manufacturing equipment by vapor growth
JPH0699230B2 (en) * 1985-03-26 1994-12-07 株式会社東芝 Metalorganic pyrolysis vapor phase growth equipment
US4699085A (en) * 1986-09-03 1987-10-13 Texas Instruments Incorporated Chemical beam epitaxy system
US4774416A (en) * 1986-09-24 1988-09-27 Plaser Corporation Large cross-sectional area molecular beam source for semiconductor processing

Also Published As

Publication number Publication date
JPS63272026A (en) 1988-11-09
US5122393A (en) 1992-06-16
ATE64159T1 (en) 1991-06-15
ES2022614B3 (en) 1991-12-01
GB8708436D0 (en) 1987-05-13
DE3863114D1 (en) 1991-07-11
CA1325371C (en) 1993-12-21
EP0286274B1 (en) 1991-06-05
EP0286274A1 (en) 1988-10-12

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