GB997996A - Field effect device and method of manufacturing the same - Google Patents
Field effect device and method of manufacturing the sameInfo
- Publication number
- GB997996A GB997996A GB1981/63A GB198163A GB997996A GB 997996 A GB997996 A GB 997996A GB 1981/63 A GB1981/63 A GB 1981/63A GB 198163 A GB198163 A GB 198163A GB 997996 A GB997996 A GB 997996A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- layers
- regions
- wafer
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 abstract 1
- 239000005052 trichlorosilane Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17397062A | 1962-02-19 | 1962-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB997996A true GB997996A (en) | 1965-07-14 |
Family
ID=32092255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1981/63A Expired GB997996A (en) | 1962-02-19 | 1963-01-16 | Field effect device and method of manufacturing the same |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE627499A (en:Method) |
| DE (1) | DE1237693B (en:Method) |
| FR (1) | FR1347395A (en:Method) |
| GB (1) | GB997996A (en:Method) |
| NL (1) | NL288745A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| USRE34821E (en) * | 1986-11-17 | 1995-01-03 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1614861C3 (de) * | 1967-09-01 | 1982-03-11 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE509317A (en:Method) * | 1951-03-07 | 1900-01-01 | ||
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| FR1293699A (fr) * | 1960-05-02 | 1962-05-18 | Westinghouse Electric Corp | Dispositif semi-conducteur |
-
0
- NL NL288745D patent/NL288745A/xx unknown
-
1963
- 1963-01-16 GB GB1981/63A patent/GB997996A/en not_active Expired
- 1963-01-22 FR FR922155A patent/FR1347395A/fr not_active Expired
- 1963-01-24 BE BE627499D patent/BE627499A/xx unknown
- 1963-02-18 DE DEM55822A patent/DE1237693B/de not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| US5012305A (en) * | 1986-11-17 | 1991-04-30 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| USRE34821E (en) * | 1986-11-17 | 1995-01-03 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1347395A (fr) | 1963-12-27 |
| BE627499A (en:Method) | 1963-05-15 |
| DE1237693B (de) | 1967-03-30 |
| NL288745A (en:Method) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3600651A (en) | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon | |
| US3525025A (en) | Electrically isolated semiconductor devices in integrated circuits | |
| US3293087A (en) | Method of making isolated epitaxial field-effect device | |
| GB1116209A (en) | Improvements in semiconductor structures | |
| US3440503A (en) | Integrated complementary mos-type transistor structure and method of making same | |
| GB959667A (en) | Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes | |
| GB1050478A (en:Method) | ||
| GB1059739A (en) | Semiconductor element and device and method fabricating the same | |
| GB1393123A (en) | Semiconductor device manufacture | |
| GB1155578A (en) | Field Effect Transistor | |
| GB1263127A (en) | Integrated circuits | |
| GB1012123A (en) | Improvements in or relating to semiconductor devices | |
| GB1024359A (en) | Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same | |
| GB1217472A (en) | Integrated circuits | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| GB1312510A (en) | Method of manufacturing a multi-layer semiconductor device | |
| GB997996A (en) | Field effect device and method of manufacturing the same | |
| ES359297A1 (es) | Un dispositivo semiconductor. | |
| GB1020097A (en) | Semiconductor switching device and method of manufacture | |
| GB1071294A (en) | Improvements in and relating to the manufacture of transistors | |
| US3409482A (en) | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter | |
| GB1279735A (en) | Semiconductor device and fabrication of same | |
| GB1340350A (en) | Surface controlled avalanche semiconductor device | |
| JPS54107270A (en) | Semiconductor device and its production | |
| GB1443479A (en) | Production of integrated circuits with field-effect transistors having different conductivity states |