NL288745A - - Google Patents

Info

Publication number
NL288745A
NL288745A NL288745DA NL288745A NL 288745 A NL288745 A NL 288745A NL 288745D A NL288745D A NL 288745DA NL 288745 A NL288745 A NL 288745A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL288745A publication Critical patent/NL288745A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P14/24
    • H10P14/2905
    • H10P14/3411
    • H10P14/3442
    • H10P14/3444
NL288745D 1962-02-19 NL288745A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17397062A 1962-02-19 1962-02-19

Publications (1)

Publication Number Publication Date
NL288745A true NL288745A (en:Method)

Family

ID=32092255

Family Applications (1)

Application Number Title Priority Date Filing Date
NL288745D NL288745A (en:Method) 1962-02-19

Country Status (5)

Country Link
BE (1) BE627499A (en:Method)
DE (1) DE1237693B (en:Method)
FR (1) FR1347395A (en:Method)
GB (1) GB997996A (en:Method)
NL (1) NL288745A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861C3 (de) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
USRE34821E (en) * 1986-11-17 1995-01-03 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
EP0268426A3 (en) * 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (en:Method) * 1951-03-07 1900-01-01
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
FR1293699A (fr) * 1960-05-02 1962-05-18 Westinghouse Electric Corp Dispositif semi-conducteur

Also Published As

Publication number Publication date
GB997996A (en) 1965-07-14
DE1237693B (de) 1967-03-30
BE627499A (en:Method) 1963-05-15
FR1347395A (fr) 1963-12-27

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