GB995527A - Alloy-diffused transistor - Google Patents
Alloy-diffused transistorInfo
- Publication number
- GB995527A GB995527A GB10546/64A GB1054664A GB995527A GB 995527 A GB995527 A GB 995527A GB 10546/64 A GB10546/64 A GB 10546/64A GB 1054664 A GB1054664 A GB 1054664A GB 995527 A GB995527 A GB 995527A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloyed
- layer
- region
- antimony
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052787 antimony Inorganic materials 0.000 abstract 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052733 gallium Inorganic materials 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US267220A US3309244A (en) | 1963-03-22 | 1963-03-22 | Alloy-diffused method for producing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB995527A true GB995527A (en) | 1965-06-16 |
Family
ID=23017838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB10546/64A Expired GB995527A (en) | 1963-03-22 | 1964-03-12 | Alloy-diffused transistor |
Country Status (9)
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
US3905844A (en) * | 1971-06-15 | 1975-09-16 | Matsushita Electric Ind Co Ltd | Method of making a PN junction device by metal dot alloying and recrystallization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
NL257150A (US20070244113A1-20071018-C00087.png) * | 1960-10-22 | 1900-01-01 | ||
US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
-
1963
- 1963-03-22 US US267220A patent/US3309244A/en not_active Expired - Lifetime
-
1964
- 1964-03-12 GB GB10546/64A patent/GB995527A/en not_active Expired
- 1964-03-13 NL NL6402683A patent/NL6402683A/xx unknown
- 1964-03-16 BE BE645252D patent/BE645252A/xx unknown
- 1964-03-17 NO NO152483A patent/NO116431B/no unknown
- 1964-03-18 DK DK137664AA patent/DK117363B/da unknown
- 1964-03-18 FR FR967809A patent/FR1397401A/fr not_active Expired
- 1964-03-21 JP JP39015303A patent/JPS4911033B1/ja active Pending
- 1964-03-23 DE DEM47770U patent/DE1935088U/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE645252A (US20070244113A1-20071018-C00087.png) | 1964-07-16 |
NL6402683A (US20070244113A1-20071018-C00087.png) | 1964-09-23 |
DE1935088U (de) | 1966-03-24 |
US3309244A (en) | 1967-03-14 |
DK117363B (da) | 1970-04-20 |
JPS4911033B1 (US20070244113A1-20071018-C00087.png) | 1974-03-14 |
NO116431B (US20070244113A1-20071018-C00087.png) | 1969-03-24 |
FR1397401A (fr) | 1965-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB730123A (en) | Improved method of fabricating semi-conductive devices | |
GB1059739A (en) | Semiconductor element and device and method fabricating the same | |
GB1028782A (en) | Semiconductor light-producing device | |
GB959447A (en) | Semiconductor devices | |
GB972512A (en) | Methods of making semiconductor devices | |
GB1010192A (en) | Improvements in or relating to semi-conductor devices | |
GB836585A (en) | Improvements in or relating to semi-conductive devices | |
GB878792A (en) | Transistor and method of making same | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB856430A (en) | Improvements in and relating to semi-conductive devices | |
GB849477A (en) | Improvements in or relating to semiconductor control devices | |
GB1145121A (en) | Improvements in and relating to transistors | |
GB983266A (en) | Semiconductor switching devices | |
GB1110281A (en) | Semiconductor junction device for generating optical radiation | |
GB1073135A (en) | Semiconductor current limiter | |
GB995527A (en) | Alloy-diffused transistor | |
GB896717A (en) | Semiconductor diode | |
GB969592A (en) | A semi-conductor device | |
GB1080560A (en) | Semiconductor diode device | |
GB909476A (en) | Semiconductor devices | |
JPS5548958A (en) | Semiconductor device | |
GB968106A (en) | Improvements in or relating to semiconductor devices | |
GB1110321A (en) | Improvements in or relating to semiconductor devices | |
GB728940A (en) | Improvements in and relating to methods of making broad area semi-conductor devices | |
GB1007952A (en) | Improvements in and relating to semi-conductor devices |