GB995527A - Alloy-diffused transistor - Google Patents

Alloy-diffused transistor

Info

Publication number
GB995527A
GB995527A GB10546/64A GB1054664A GB995527A GB 995527 A GB995527 A GB 995527A GB 10546/64 A GB10546/64 A GB 10546/64A GB 1054664 A GB1054664 A GB 1054664A GB 995527 A GB995527 A GB 995527A
Authority
GB
United Kingdom
Prior art keywords
alloyed
layer
region
antimony
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10546/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB995527A publication Critical patent/GB995527A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/035Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
GB10546/64A 1963-03-22 1964-03-12 Alloy-diffused transistor Expired GB995527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US267220A US3309244A (en) 1963-03-22 1963-03-22 Alloy-diffused method for producing semiconductor devices

Publications (1)

Publication Number Publication Date
GB995527A true GB995527A (en) 1965-06-16

Family

ID=23017838

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10546/64A Expired GB995527A (en) 1963-03-22 1964-03-12 Alloy-diffused transistor

Country Status (9)

Country Link
US (1) US3309244A (US20070244113A1-20071018-C00087.png)
JP (1) JPS4911033B1 (US20070244113A1-20071018-C00087.png)
BE (1) BE645252A (US20070244113A1-20071018-C00087.png)
DE (1) DE1935088U (US20070244113A1-20071018-C00087.png)
DK (1) DK117363B (US20070244113A1-20071018-C00087.png)
FR (1) FR1397401A (US20070244113A1-20071018-C00087.png)
GB (1) GB995527A (US20070244113A1-20071018-C00087.png)
NL (1) NL6402683A (US20070244113A1-20071018-C00087.png)
NO (1) NO116431B (US20070244113A1-20071018-C00087.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3905844A (en) * 1971-06-15 1975-09-16 Matsushita Electric Ind Co Ltd Method of making a PN junction device by metal dot alloying and recrystallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2943006A (en) * 1957-05-06 1960-06-28 Westinghouse Electric Corp Diffused transistors and processes for making the same
NL257150A (US20070244113A1-20071018-C00087.png) * 1960-10-22 1900-01-01
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture

Also Published As

Publication number Publication date
BE645252A (US20070244113A1-20071018-C00087.png) 1964-07-16
NL6402683A (US20070244113A1-20071018-C00087.png) 1964-09-23
DE1935088U (de) 1966-03-24
US3309244A (en) 1967-03-14
DK117363B (da) 1970-04-20
JPS4911033B1 (US20070244113A1-20071018-C00087.png) 1974-03-14
NO116431B (US20070244113A1-20071018-C00087.png) 1969-03-24
FR1397401A (fr) 1965-04-30

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