GB992671A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB992671A
GB992671A GB27733/62A GB2773362A GB992671A GB 992671 A GB992671 A GB 992671A GB 27733/62 A GB27733/62 A GB 27733/62A GB 2773362 A GB2773362 A GB 2773362A GB 992671 A GB992671 A GB 992671A
Authority
GB
United Kingdom
Prior art keywords
semi
layer
assembly
deposits
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27733/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB992671A publication Critical patent/GB992671A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
GB27733/62A 1961-08-16 1962-07-19 Improvements in or relating to semi-conductor devices Expired GB992671A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US131771A US3144366A (en) 1961-08-16 1961-08-16 Method of fabricating a plurality of pn junctions in a semiconductor body

Publications (1)

Publication Number Publication Date
GB992671A true GB992671A (en) 1965-05-19

Family

ID=22450959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27733/62A Expired GB992671A (en) 1961-08-16 1962-07-19 Improvements in or relating to semi-conductor devices

Country Status (6)

Country Link
US (1) US3144366A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE621451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH402194A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1266609B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB992671A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL281568A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377215A (en) * 1961-09-29 1968-04-09 Texas Instruments Inc Diode array
GB1052379A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-03-28 1900-01-01
US3291640A (en) * 1963-05-27 1966-12-13 Chemclean Corp Ultrasonic cleaning process
DE1290925B (de) * 1963-06-10 1969-03-20 Philips Nv Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper
NL136562C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-10-24
US3352726A (en) * 1964-04-13 1967-11-14 Philco Ford Corp Method of fabricating planar semiconductor devices
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3372071A (en) * 1965-06-30 1968-03-05 Texas Instruments Inc Method of forming a small area junction semiconductor
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
US3383251A (en) * 1965-12-10 1968-05-14 Rca Corp Method for forming of semiconductor devices by masking and diffusion
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
GB1130666A (en) * 1966-09-30 1968-10-16 Nippon Electric Co A semiconductor device
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
FR2252638B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
DE2415290A1 (de) * 1974-03-29 1975-10-09 Licentia Gmbh Maske zur bearbeitung einer halbleiteranordnung
US6087263A (en) * 1998-01-29 2000-07-11 Micron Technology, Inc. Methods of forming integrated circuitry and integrated circuitry structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE505362A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1950-09-06
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
DE1047911B (de) * 1955-06-07 1958-12-31 Dr Erwin Daniels Verfahren zur Herstellung temperaturempfindlicher Hochohmwiderstaende geringer Waermetraegheit, insbesondere zur Strahlungsmessung
US2995461A (en) * 1956-04-02 1961-08-08 Libbey Owens Ford Glass Co Protective coatings
DE1097039B (de) * 1958-07-02 1961-01-12 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleiteranordnungen
US2961354A (en) * 1958-10-28 1960-11-22 Bell Telephone Labor Inc Surface treatment of semiconductive devices
NL125412C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-04-15

Also Published As

Publication number Publication date
CH402194A (de) 1965-11-15
US3144366A (en) 1964-08-11
DE1266609B (de) 1968-04-18
BE621451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL281568A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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