GB986430A - Controlled semiconductor rectifier circuits - Google Patents

Controlled semiconductor rectifier circuits

Info

Publication number
GB986430A
GB986430A GB3367161A GB3367161A GB986430A GB 986430 A GB986430 A GB 986430A GB 3367161 A GB3367161 A GB 3367161A GB 3367161 A GB3367161 A GB 3367161A GB 986430 A GB986430 A GB 986430A
Authority
GB
United Kingdom
Prior art keywords
rectifiers
rectifier
resistor
diode
ignite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3367161A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB986430A publication Critical patent/GB986430A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/19—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only arranged for operation in series, e.g. for voltage multiplication
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Abstract

986,430. Controlled semi-conductor rectifier switching circuits. LICENTIA PATENTVERWALTUNGS-G.m.b.H. Sept. 20, 1961 [Sept. 28, 1960], No. 33671/61. Heading H3T. In a circuit comprising two controlled PNPN or NPNP semi-conductor rectifiers connected in series so that when one of the rectifiers is ignited the other consecutively ignites an R.C.- circuit chain is connected in parallel with the two rectifiers and a resistor is connected between the connecting point of the two rectifiers and the mid-point of the R.C.-circuit chain such that the voltage drop across the resistor when one of the rectifiers conducts causes a current to flow through a diode, Zener diode, capacitor or resistor connected between the mid-point of the R.C.-chain and the control electrode of the second rectifier and hence the latter rectifier to consecutively ignite. As shown in Fig. 2, two PNPN or NPNP controlled semiconductor rectifiers 1, 1<SP>1</SP> biased by resistors 2, 2<SP>1</SP>, are connected in series, and if rectifier 1 is caused to ignite by a control voltage applied to terminals 5, 6 the rising anode current of the ignited rectifier results in a potential drop across resistor 8 connected between the mid-point of R.C.-circuit chain 4, 4<SP>1</SP> and 3, 3<SP>1</SP> in parallel with the two rectifiers and the connecting point of the rectifiers. The resulting current flow through diode 7 to the control electrode of rectifier 1<SP>1</SP> causes the latter to ignite. Any mains over-voltages which occur do not cause rectifier 1<SP>1</SP> to ignite before rectifier 1 does because of the symmetrical arrangement of the resistors 2, 2<SP>1</SP> and the R.C.-circuit chain, there being no resulting voltage drop across resistor 8 and hence no current flow through diode 7. The diode 7 may be replaced by a Zener diode, capacitor or resistor.
GB3367161A 1960-09-28 1961-09-20 Controlled semiconductor rectifier circuits Expired GB986430A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0037128 1960-09-28

Publications (1)

Publication Number Publication Date
GB986430A true GB986430A (en) 1965-03-17

Family

ID=7267766

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3367161A Expired GB986430A (en) 1960-09-28 1961-09-20 Controlled semiconductor rectifier circuits

Country Status (3)

Country Link
CH (1) CH401244A (en)
GB (1) GB986430A (en)
NL (1) NL269555A (en)

Also Published As

Publication number Publication date
CH401244A (en) 1965-10-31
NL269555A (en)

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