GB9707195D0 - Stacked capacitor type dram having an improved capacitor contact structure and method for manufacturing the same - Google Patents

Stacked capacitor type dram having an improved capacitor contact structure and method for manufacturing the same

Info

Publication number
GB9707195D0
GB9707195D0 GBGB9707195.5A GB9707195A GB9707195D0 GB 9707195 D0 GB9707195 D0 GB 9707195D0 GB 9707195 A GB9707195 A GB 9707195A GB 9707195 D0 GB9707195 D0 GB 9707195D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
same
contact structure
type dram
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9707195.5A
Other versions
GB2312094A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9707195D0 publication Critical patent/GB9707195D0/en
Publication of GB2312094A publication Critical patent/GB2312094A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/033Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9707195A 1996-04-09 1997-04-09 Stacked capacitor type DRAM Withdrawn GB2312094A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08687696A JP3147144B2 (en) 1996-04-09 1996-04-09 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
GB9707195D0 true GB9707195D0 (en) 1997-05-28
GB2312094A GB2312094A (en) 1997-10-15

Family

ID=13899043

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9707195A Withdrawn GB2312094A (en) 1996-04-09 1997-04-09 Stacked capacitor type DRAM

Country Status (2)

Country Link
JP (1) JP3147144B2 (en)
GB (1) GB2312094A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307287B1 (en) * 1998-11-20 2001-12-05 윤종용 Manufacturing method of pad of semiconductor device
JP3956572B2 (en) * 2000-03-13 2007-08-08 セイコーエプソン株式会社 Method for manufacturing substrate for liquid crystal device
KR100820620B1 (en) * 2005-08-05 2008-04-10 세이코 엡슨 가부시키가이샤 Method of manufacturing electro-optical device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115245A (en) * 1983-11-28 1985-06-21 Toshiba Corp Manufacture of semiconductor device
JP2602219B2 (en) * 1987-02-06 1997-04-23 株式会社日立製作所 Semiconductor storage device
JP2805765B2 (en) * 1988-09-13 1998-09-30 ソニー株式会社 Semiconductor memory device
KR920009748B1 (en) * 1990-05-31 1992-10-22 삼성전자 주식회사 Stacked capacitor cell and method for producing the same

Also Published As

Publication number Publication date
GB2312094A (en) 1997-10-15
JPH09283620A (en) 1997-10-31
JP3147144B2 (en) 2001-03-19

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)