GB9701924D0 - Method of fabricating a semiconductor memory device having a capacitor - Google Patents

Method of fabricating a semiconductor memory device having a capacitor

Info

Publication number
GB9701924D0
GB9701924D0 GBGB9701924.4A GB9701924A GB9701924D0 GB 9701924 D0 GB9701924 D0 GB 9701924D0 GB 9701924 A GB9701924 A GB 9701924A GB 9701924 D0 GB9701924 D0 GB 9701924D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
capacitor
memory device
semiconductor memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9701924.4A
Other versions
GB2321772A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085110000A external-priority patent/TW312828B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9701924A priority Critical patent/GB2321772A/en
Publication of GB9701924D0 publication Critical patent/GB9701924D0/en
Priority to JP9077766A priority patent/JPH1079489A/en
Priority to FR9705120A priority patent/FR2752485B1/en
Priority to DE19720204A priority patent/DE19720204A1/en
Publication of GB2321772A publication Critical patent/GB2321772A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9701924A 1996-08-16 1997-01-30 A method of fabricating a semiconductor memory device Withdrawn GB2321772A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB9701924A GB2321772A (en) 1996-08-16 1997-01-30 A method of fabricating a semiconductor memory device
JP9077766A JPH1079489A (en) 1996-08-16 1997-03-28 Manufacture of semiconductor memory device having capacitor
FR9705120A FR2752485B1 (en) 1996-08-16 1997-04-25 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A CAPACITOR
DE19720204A DE19720204A1 (en) 1996-08-16 1997-05-14 Manufacturing method of semiconductor memory device with capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW085110000A TW312828B (en) 1996-08-16 1996-08-16 Manufacturing method of semiconductor memory device with capacitor(5)
GB9701924A GB2321772A (en) 1996-08-16 1997-01-30 A method of fabricating a semiconductor memory device

Publications (2)

Publication Number Publication Date
GB9701924D0 true GB9701924D0 (en) 1997-03-19
GB2321772A GB2321772A (en) 1998-08-05

Family

ID=26310895

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9701924A Withdrawn GB2321772A (en) 1996-08-16 1997-01-30 A method of fabricating a semiconductor memory device

Country Status (4)

Country Link
JP (1) JPH1079489A (en)
DE (1) DE19720204A1 (en)
FR (1) FR2752485B1 (en)
GB (1) GB2321772A (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
KR930002292B1 (en) * 1990-06-02 1993-03-29 삼성전자 주식회사 Semiconductor device and method for manufacturing thereof
JPH04276656A (en) * 1991-03-05 1992-10-01 Fujitsu Ltd Semiconductor device and its manufacture
US5254218A (en) * 1992-04-22 1993-10-19 Micron Technology, Inc. Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer
KR960006718B1 (en) * 1992-12-31 1996-05-22 현대전자산업주식회사 Memory capacitor in semiconductor device and the method for fabricating the same
KR960011652B1 (en) * 1993-04-14 1996-08-24 현대전자산업 주식회사 Stack capacitor and the method
JP3172321B2 (en) * 1993-04-26 2001-06-04 三洋電機株式会社 Method for manufacturing semiconductor memory device
US5543346A (en) * 1993-08-31 1996-08-06 Hyundai Electronics Industries Co., Ltd. Method of fabricating a dynamic random access memory stacked capacitor
US5449635A (en) * 1993-12-28 1995-09-12 Goldstar Electron Co., Ltd. Method of fabricating a semiconductor memory

Also Published As

Publication number Publication date
FR2752485B1 (en) 2001-05-25
DE19720204A1 (en) 1998-02-19
FR2752485A1 (en) 1998-02-20
GB2321772A (en) 1998-08-05
JPH1079489A (en) 1998-03-24

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GB9701924D0 (en) Method of fabricating a semiconductor memory device having a capacitor

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)