GB969614A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB969614A
GB969614A GB26727/60A GB2672760A GB969614A GB 969614 A GB969614 A GB 969614A GB 26727/60 A GB26727/60 A GB 26727/60A GB 2672760 A GB2672760 A GB 2672760A GB 969614 A GB969614 A GB 969614A
Authority
GB
United Kingdom
Prior art keywords
electrode
electrodes
current
base
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26727/60A
Inventor
Jerzy Roman Czaczkowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL267818D priority Critical patent/NL267818A/xx
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB26727/60A priority patent/GB969614A/en
Priority to US128059A priority patent/US3113222A/en
Priority to FR869899A priority patent/FR1297431A/en
Priority to DEA38035A priority patent/DE1199859B/en
Publication of GB969614A publication Critical patent/GB969614A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

969,614. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. July 20, 1961 [Aug. 2, 1960], No. 26727/60. Heading H1K. A semi-conductor device, which produces a stepped current waveform in response to a continuously increasing voltage, comprises a base-plate 1 of semi-conductor material with main electrodes M spaced alternately on one side and the other so as to overlap, the spaces on each side of the base-plate between adjacent electrodes being subjected to the injection of carriers. The carriers are injected by means of the emitter electrodes E. The p-type electrodes are strips extending across the width of the high resistivity n-type base-plate 1 or may be sectors disposed in an arc as shown in Fig. 4. The emitters may be small electrodes placed in positions offset from the line of main electrodes; Fig. 3, not shown. The Provisional Specification refers to the injection of carriers by means of localized light beams. The main electrode M1 is connected to a potential negative with respect to a distant or central terminal F. As the potential difference increases, current drawn by terminal T1 stays at the saturation value corresponding to the size of the junction provided by electrode M1 until the voltage reaches the punch through valve from electrode M1 to electrode M2 and additional current is drawn by terminal T1 to the extent allowed by emitter El. When a further increase in voltage achieves the punch through valve from electrodes M2 to M3, the current is further increased by the amount contributed by emitter E2. The current is thereby increased step-wise as the base material punches through from electrode to electrode until M6, of Fig. 1, or M9, of Fig. 4, is reached.
GB26727/60A 1960-08-02 1960-08-02 Improvements in or relating to semiconductor devices Expired GB969614A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL267818D NL267818A (en) 1960-08-02
GB26727/60A GB969614A (en) 1960-08-02 1960-08-02 Improvements in or relating to semiconductor devices
US128059A US3113222A (en) 1960-08-02 1961-07-31 Semi-conductor to provide a step current function with plural emitters which inject minority carriers
FR869899A FR1297431A (en) 1960-08-02 1961-08-01 New semiconductor devices
DEA38035A DE1199859B (en) 1960-08-02 1961-08-01 Semiconductor device, e.g. B. Resistance or voltage-dependent switch, with a base body and several electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB26727/60A GB969614A (en) 1960-08-02 1960-08-02 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB969614A true GB969614A (en) 1964-09-09

Family

ID=10248286

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26727/60A Expired GB969614A (en) 1960-08-02 1960-08-02 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
US (1) US3113222A (en)
DE (1) DE1199859B (en)
GB (1) GB969614A (en)
NL (1) NL267818A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (en) * 1961-06-07 1969-05-08 Westinghouse Electric Corp High voltage rectifier and method of manufacture
US3213339A (en) * 1962-07-02 1965-10-19 Westinghouse Electric Corp Semiconductor device for controlling the continuity of multiple electric paths

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices
GB849477A (en) * 1957-09-23 1960-09-28 Nat Res Dev Improvements in or relating to semiconductor control devices

Also Published As

Publication number Publication date
US3113222A (en) 1963-12-03
NL267818A (en)
DE1199859B (en) 1965-09-02

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