GB969413A - Mono crystalline metal oxide materials - Google Patents

Mono crystalline metal oxide materials

Info

Publication number
GB969413A
GB969413A GB3719662A GB3719662A GB969413A GB 969413 A GB969413 A GB 969413A GB 3719662 A GB3719662 A GB 3719662A GB 3719662 A GB3719662 A GB 3719662A GB 969413 A GB969413 A GB 969413A
Authority
GB
United Kingdom
Prior art keywords
oxide
erbium
gadolinium
boule
ytterbium oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3719662A
Other languages
English (en)
Inventor
Leon Merker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT LEAD CO
NL Industries Inc
Original Assignee
NAT LEAD CO
NL Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT LEAD CO, NL Industries Inc filed Critical NAT LEAD CO
Publication of GB969413A publication Critical patent/GB969413A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
GB3719662A 1961-10-04 1962-10-01 Mono crystalline metal oxide materials Expired GB969413A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14291261A 1961-10-04 1961-10-04
US14999761A 1961-11-03 1961-11-03

Publications (1)

Publication Number Publication Date
GB969413A true GB969413A (en) 1964-09-09

Family

ID=26840525

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3719662A Expired GB969413A (en) 1961-10-04 1962-10-01 Mono crystalline metal oxide materials
GB3746362A Expired GB968253A (en) 1961-10-04 1962-10-03 Monocrystalline metal oxide materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB3746362A Expired GB968253A (en) 1961-10-04 1962-10-03 Monocrystalline metal oxide materials

Country Status (3)

Country Link
CH (1) CH433205A (xx)
GB (2) GB969413A (xx)
NL (1) NL283979A (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479297A (en) * 1981-06-22 1984-10-30 Tokyo Shibaura Denki Kabushiki Kaisha Method of fabricating three-dimensional semiconductor devices utilizing CeO2 and ion-implantation.
US7616210B2 (en) 2005-08-23 2009-11-10 Canon Kabushiki Kaisha Memory apparatus and memory control method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7418098B2 (ja) * 2019-04-26 2024-01-19 キヤノン株式会社 光学多層膜の成膜方法および光学素子の製造方法
CN116283291B (zh) * 2023-03-20 2024-02-23 中国矿业大学(北京) 绝缘管制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479297A (en) * 1981-06-22 1984-10-30 Tokyo Shibaura Denki Kabushiki Kaisha Method of fabricating three-dimensional semiconductor devices utilizing CeO2 and ion-implantation.
US7616210B2 (en) 2005-08-23 2009-11-10 Canon Kabushiki Kaisha Memory apparatus and memory control method

Also Published As

Publication number Publication date
GB968253A (en) 1964-09-02
CH433205A (de) 1967-04-15
NL283979A (xx)

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