GB968785A - Method and apparatus for producing single crystals of refractory material - Google Patents

Method and apparatus for producing single crystals of refractory material

Info

Publication number
GB968785A
GB968785A GB4888662A GB4888662A GB968785A GB 968785 A GB968785 A GB 968785A GB 4888662 A GB4888662 A GB 4888662A GB 4888662 A GB4888662 A GB 4888662A GB 968785 A GB968785 A GB 968785A
Authority
GB
United Kingdom
Prior art keywords
single crystals
refractory material
dec
producing single
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4888662A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre dEtude de lEnergie Nucleaire CEN
Original Assignee
Centre dEtude de lEnergie Nucleaire CEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre dEtude de lEnergie Nucleaire CEN filed Critical Centre dEtude de lEnergie Nucleaire CEN
Publication of GB968785A publication Critical patent/GB968785A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB4888662A 1961-12-29 1962-12-28 Method and apparatus for producing single crystals of refractory material Expired GB968785A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL273065 1961-12-29
NL287927 1963-01-18

Publications (1)

Publication Number Publication Date
GB968785A true GB968785A (en) 1964-09-02

Family

ID=30772298

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4888662A Expired GB968785A (en) 1961-12-29 1962-12-28 Method and apparatus for producing single crystals of refractory material

Country Status (7)

Country Link
BE (1) BE641229A (enrdf_load_stackoverflow)
CH (1) CH410863A (enrdf_load_stackoverflow)
DE (2) DE1202758B (enrdf_load_stackoverflow)
GB (1) GB968785A (enrdf_load_stackoverflow)
IT (1) IT712544A (enrdf_load_stackoverflow)
LU (1) LU45075A1 (enrdf_load_stackoverflow)
NL (2) NL273065A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111394781A (zh) * 2020-04-06 2020-07-10 上海应用技术大学 一种利用硼酸盐助熔剂生长二氧化铀晶体的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111394781A (zh) * 2020-04-06 2020-07-10 上海应用技术大学 一种利用硼酸盐助熔剂生长二氧化铀晶体的方法
CN111394781B (zh) * 2020-04-06 2021-04-16 上海应用技术大学 一种利用硼酸盐助熔剂生长二氧化铀晶体的方法

Also Published As

Publication number Publication date
IT712544A (enrdf_load_stackoverflow)
CH410863A (fr) 1966-04-15
LU45075A1 (enrdf_load_stackoverflow) 1964-04-20
BE641229A (enrdf_load_stackoverflow) 1964-06-15
NL273065A (enrdf_load_stackoverflow)
DE1202758B (de) 1965-10-14
NL287927A (enrdf_load_stackoverflow)
DE1193917B (de) 1965-06-03

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