GB963799A - Method of epitaxially growing semiconductor material - Google Patents

Method of epitaxially growing semiconductor material

Info

Publication number
GB963799A
GB963799A GB48837/62A GB4883762A GB963799A GB 963799 A GB963799 A GB 963799A GB 48837/62 A GB48837/62 A GB 48837/62A GB 4883762 A GB4883762 A GB 4883762A GB 963799 A GB963799 A GB 963799A
Authority
GB
United Kingdom
Prior art keywords
substrate
via valve
germanium
gecl4
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48837/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB963799A publication Critical patent/GB963799A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/048—Energy beam assisted EPI growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

<PICT:0963799/C1/1> A semi-conductor is epitaxially deposited from the halide vapour phase on to selected areas of a substrate which is heated to a temperature below the thermal reaction temperature for epitaxial growth, by focusing electromagnetic radiation on to the selected areas to increase the activation energy sufficient for epitaxial growth to take place. The process is applicable to the deposition of germanium, silicon, compounds of Group III and Group V such as gallium arsenide, indium phosphide and aluminium antimonide and also p-type deposits such as boron and N-type deposits such as arsenic. As shown in Fig. 1 a germanium substrate 17 is placed on a quartz jig 16 in a reaction chamber 10 and positioned adjacent to a window 11. An optical system comprising light source 18 and light filter 20 for passing ultra-violet light, a condensing lens system 19, a mask 21 and a focusing lens system 22 focuses the apertures in the mask 21 on to the substrate 17 which is first heated to 700 DEG C. in a hydrogen atmosphere to reduce oxides and then reduced to 450 DEG C., i.e. 50 DEG C. below the reduction temperature of GeCl4. Hydrogen is introduced into the chamber via valve 24, GeCl4 via valve 25 and 1% of AsCl3 via valve 28. The substrate is activated in selected areas by the optical system and the epitaxial deposit 31, 32 formed. A neutral gas such as argon or helium may also be introduced into the chamber via valve 24. After the required thickness of N-type germanium is formed, the process is repeated with the same or a different mask and BCl3 is introduced to deposit P-type germanium. Several layers and different patterns may be produced (Fig. 2, not shown), and a final passivating film may be formed by forming an oxide film from an atmosph ere of O2 or H2O plus GeCl4 or SiO may be produced by the decomposition of silanes.ALSO:A semi-conductor is epitaxially deposited from the halide vapour phase on to selected areas of a substrate which is heated to a temperature below the thermal reaction temperature for epitaxial growth, by focusing electromagnetic radiation on to the selected areas to increase the activation energy sufficient for epitaxial growth to take place. The process is applicable to the deposition of germanium, silicon, compounds of Group III and Group V such as gallium arsenide, indium phosphide and aluminium antimonide and also P type dopants such as boron and N-type dopants such as arsenic. As shown in Fig. 1, a germanium substrate 17 is placed on a quartz jig 16 in a reaction chamber 10 and positioned adjacent a window 11. An optical system comprising light source 18 and light filter 20 for passing ultra-violet light, a condensing lens system 19, a mask 21 and a focusing lens system 22 focuses the apertures in the mask 21 on to the substrate 17 which is first heated to 700 DEG C. in a hydrogen atmosphere to reduce oxides and then reduced to 450 DEG C., i.e. 50 DEG C. below the reduction temperature of GeCl4. Hydrogen is introduced into the chamber via valve 24, GeCl4 via valve 25 and 1% of AsCl3 via valve 28. The substrate is activated in selected areas by the optical system and the epitaxial deposit 31, 32 is formed. A neutral gas such as argon or helium may also be introduced into the chamber via valve 24. After the required <PICT:0963799/C6-C7/1> thickness of N type germanium is formed, the process is repeated with the same or a different mask and BCl3 is introduced to deposit P type germanium. Several layers and different patterns may be produced, see Fig. 2 (not shown), and a final passivating film may be formed by forming an oxide film from an atmosphere of O2 or H2O plus GeCl4 or SiO may be produced by the decomposition of silanes.
GB48837/62A 1962-01-29 1962-12-28 Method of epitaxially growing semiconductor material Expired GB963799A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US169204A US3200018A (en) 1962-01-29 1962-01-29 Controlled epitaxial crystal growth by focusing electromagnetic radiation

Publications (1)

Publication Number Publication Date
GB963799A true GB963799A (en) 1964-07-15

Family

ID=22614620

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48837/62A Expired GB963799A (en) 1962-01-29 1962-12-28 Method of epitaxially growing semiconductor material

Country Status (2)

Country Link
US (1) US3200018A (en)
GB (1) GB963799A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US5849077A (en) * 1994-04-11 1998-12-15 Texas Instruments Incorporated Process for growing epitaxial silicon in the windows of an oxide-patterned wafer

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464305B2 (en) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Process for producing semiconductor components and components produced by this process
US3345209A (en) * 1964-04-02 1967-10-03 Ibm Growth control of disproportionation process
US3338760A (en) * 1964-06-03 1967-08-29 Massachusetts Inst Technology Method of making a heterojunction semiconductor device
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1544259A1 (en) * 1965-02-05 1970-07-09 Siemens Ag Process for the production of uniform epitaxial growth layers
US3511702A (en) * 1965-08-20 1970-05-12 Motorola Inc Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3459603A (en) * 1966-01-12 1969-08-05 Us Air Force Method for preparing electroluminescent light sources
US3490961A (en) * 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
US3533862A (en) * 1967-08-21 1970-10-13 Texas Instruments Inc Method of forming semiconductor regions in an epitaxial layer
GB1452076A (en) * 1972-11-29 1976-10-06 Applied Materials Inc Process and apparatus for preparing semiconductor wafers without crystallographic slip
JPS5814644B2 (en) * 1975-05-14 1983-03-22 松下電器産業株式会社 Hikaridensouronoseizouhouhou
US4421592A (en) * 1981-05-22 1983-12-20 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4435445A (en) 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
DE3375590D1 (en) * 1982-06-22 1988-03-10 Hughes Aircraft Co Low temperature process for depositing epitaxial layers
JPS5958819A (en) * 1982-09-29 1984-04-04 Hitachi Ltd Formation of thin film
DE3407089A1 (en) * 1984-02-27 1985-08-29 Siemens Ag METHOD AND DEVICE FOR LIGHT-INDUCED, PHOTOLYTIC DEPOSITION
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
US4731255A (en) * 1984-09-26 1988-03-15 Applied Materials Japan, Inc. Gas-phase growth process and an apparatus for the same
GB8428032D0 (en) * 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US5462767A (en) * 1985-09-21 1995-10-31 Semiconductor Energy Laboratory Co., Ltd. CVD of conformal coatings over a depression using alkylmetal precursors
JPS6269520A (en) * 1985-09-21 1987-03-30 Semiconductor Energy Lab Co Ltd Recess filling method by photo-cvd
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
WO2000004357A1 (en) * 1998-07-15 2000-01-27 Smithsonian Astrophysical Observatory Epitaxial germanium temperature sensor
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Family Cites Families (7)

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US1390445A (en) * 1918-04-16 1921-09-13 Jenkins Charles Francis Producing light-beams
US1364278A (en) * 1919-03-24 1921-01-04 H P Patents Light-regulator for projecting moving pictures
US2785997A (en) * 1954-03-18 1957-03-19 Ohio Commw Eng Co Gas plating process
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers
DE1056899B (en) * 1955-08-19 1959-05-06 Siemens Ag Process for the production of layers from semiconducting material
US2916400A (en) * 1957-02-25 1959-12-08 Union Carbide Corp Gas plating with tin
NL251614A (en) * 1959-05-28 1900-01-01

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US5849077A (en) * 1994-04-11 1998-12-15 Texas Instruments Incorporated Process for growing epitaxial silicon in the windows of an oxide-patterned wafer

Also Published As

Publication number Publication date
US3200018A (en) 1965-08-10

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