GB9626916D0 - Memory cell array - Google Patents

Memory cell array

Info

Publication number
GB9626916D0
GB9626916D0 GBGB9626916.2A GB9626916A GB9626916D0 GB 9626916 D0 GB9626916 D0 GB 9626916D0 GB 9626916 A GB9626916 A GB 9626916A GB 9626916 D0 GB9626916 D0 GB 9626916D0
Authority
GB
United Kingdom
Prior art keywords
memory cell
cell array
array
memory
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9626916.2A
Other versions
GB2308908B (en
GB2308908A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9626916D0 publication Critical patent/GB9626916D0/en
Publication of GB2308908A publication Critical patent/GB2308908A/en
Application granted granted Critical
Publication of GB2308908B publication Critical patent/GB2308908B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
GB9626916A 1995-12-29 1996-12-24 Memory cell array Expired - Fee Related GB2308908B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065617A KR970051170A (en) 1995-12-29 1995-12-29 Memory cell array and program method using the same

Publications (3)

Publication Number Publication Date
GB9626916D0 true GB9626916D0 (en) 1997-02-12
GB2308908A GB2308908A (en) 1997-07-09
GB2308908B GB2308908B (en) 2000-07-05

Family

ID=19447098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9626916A Expired - Fee Related GB2308908B (en) 1995-12-29 1996-12-24 Memory cell array

Country Status (4)

Country Link
JP (1) JP2966363B2 (en)
KR (1) KR970051170A (en)
DE (1) DE19654561B4 (en)
GB (1) GB2308908B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100241523B1 (en) * 1996-12-28 2000-02-01 김영환 Flash memory device and its programming, erasing and reading method
KR100643481B1 (en) * 1998-12-08 2007-12-04 삼성전자주식회사 Nonvolatile Semiconductor Memory Device_
JP2003157682A (en) 2001-11-26 2003-05-30 Mitsubishi Electric Corp Nonvolatile semiconductor memory
KR100704039B1 (en) * 2006-01-20 2007-04-04 삼성전자주식회사 Semiconductor memory device having decoding signal bussed in wordline direction
US9997253B1 (en) * 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
US4651183A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation High density one device memory cell arrays
JPS61110459A (en) * 1984-11-02 1986-05-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory
KR910004166B1 (en) * 1988-12-27 1991-06-22 삼성전자주식회사 Eeprom having nand-cells
JP3032240B2 (en) * 1990-05-22 2000-04-10 富士通株式会社 Semiconductor storage device
JPH0567759A (en) * 1991-07-05 1993-03-19 Sony Corp Floating gate type nonvolatile semiconductor storage device and its manufacture
EP0562737B1 (en) * 1992-03-26 1998-06-17 Hitachi, Ltd. Flash memory
JPH05342892A (en) * 1992-06-09 1993-12-24 Fujitsu Ltd Nonvolatile semiconductor storage device
KR100299879B1 (en) * 1993-02-01 2001-10-22 클라크 3세 존 엠. Ultra-high density alternating metal virtual ground ROM

Also Published As

Publication number Publication date
JPH09191094A (en) 1997-07-22
KR970051170A (en) 1997-07-29
GB2308908B (en) 2000-07-05
JP2966363B2 (en) 1999-10-25
DE19654561A1 (en) 1997-07-03
GB2308908A (en) 1997-07-09
DE19654561B4 (en) 2005-06-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091224