GB9608273D0 - Method of producing a semiconductor device - Google Patents

Method of producing a semiconductor device

Info

Publication number
GB9608273D0
GB9608273D0 GBGB9608273.0A GB9608273A GB9608273D0 GB 9608273 D0 GB9608273 D0 GB 9608273D0 GB 9608273 A GB9608273 A GB 9608273A GB 9608273 D0 GB9608273 D0 GB 9608273D0
Authority
GB
United Kingdom
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9608273.0A
Other versions
GB2300303A (en
GB2300303B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9608273D0 publication Critical patent/GB9608273D0/en
Publication of GB2300303A publication Critical patent/GB2300303A/en
Application granted granted Critical
Publication of GB2300303B publication Critical patent/GB2300303B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
GB9608273A 1995-04-24 1996-04-22 Method of producing a semiconductor device Expired - Fee Related GB2300303B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7098331A JP2956524B2 (en) 1995-04-24 1995-04-24 Etching method

Publications (3)

Publication Number Publication Date
GB9608273D0 true GB9608273D0 (en) 1996-06-26
GB2300303A GB2300303A (en) 1996-10-30
GB2300303B GB2300303B (en) 1997-06-04

Family

ID=14216928

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9608273A Expired - Fee Related GB2300303B (en) 1995-04-24 1996-04-22 Method of producing a semiconductor device

Country Status (3)

Country Link
JP (1) JP2956524B2 (en)
KR (1) KR960039166A (en)
GB (1) GB2300303B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US20110143548A1 (en) * 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
JP6498022B2 (en) 2015-04-22 2019-04-10 東京エレクトロン株式会社 Etching method
US9997374B2 (en) 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6498152B2 (en) 2015-12-18 2019-04-10 東京エレクトロン株式会社 Etching method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028155A (en) * 1974-02-28 1977-06-07 Lfe Corporation Process and material for manufacturing thin film integrated circuits
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
US4324611A (en) * 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
JP3092185B2 (en) * 1990-07-30 2000-09-25 セイコーエプソン株式会社 Method for manufacturing semiconductor device
JPH04214625A (en) * 1990-12-13 1992-08-05 Fujitsu Ltd Etching method
JPH04239723A (en) * 1991-01-23 1992-08-27 Nec Corp Manufacture of semiconductor device
JP3106590B2 (en) * 1991-08-29 2000-11-06 ミツミ電機株式会社 Dry etching method
JP3215151B2 (en) * 1992-03-04 2001-10-02 株式会社東芝 Dry etching method

Also Published As

Publication number Publication date
KR960039166A (en) 1996-11-21
JPH08293487A (en) 1996-11-05
JP2956524B2 (en) 1999-10-04
GB2300303A (en) 1996-10-30
GB2300303B (en) 1997-06-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000422