GB951092A - Memory circuits using negative-resistance diodes - Google Patents
Memory circuits using negative-resistance diodesInfo
- Publication number
- GB951092A GB951092A GB27308/60A GB2730860A GB951092A GB 951092 A GB951092 A GB 951092A GB 27308/60 A GB27308/60 A GB 27308/60A GB 2730860 A GB2730860 A GB 2730860A GB 951092 A GB951092 A GB 951092A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- pulses
- circuit
- resonant circuit
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 abstract 9
- 239000004020 conductor Substances 0.000 abstract 3
- 238000013500 data storage Methods 0.000 abstract 1
- 230000003467 diminishing effect Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Radar Systems Or Details Thereof (AREA)
- Geophysics And Detection Of Objects (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US837210A US3339185A (en) | 1959-08-31 | 1959-08-31 | Memory circuits employing negative resistance elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB951092A true GB951092A (en) | 1964-03-04 |
Family
ID=25273823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27308/60A Expired GB951092A (en) | 1959-08-31 | 1960-08-05 | Memory circuits using negative-resistance diodes |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3339185A (en:Method) |
| DE (1) | DE1151281B (en:Method) |
| GB (1) | GB951092A (en:Method) |
| NL (2) | NL127924C (en:Method) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189878A (en) * | 1962-07-11 | 1965-06-15 | Ibm | Negative resistance memory circuit |
| US3680059A (en) * | 1969-09-19 | 1972-07-25 | Matsushita Electric Industrial Co Ltd | Memory device utilizing pulse generating diode |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB474388A (en) * | 1936-04-29 | 1937-10-29 | Marconi Wireless Telegraph Co | Improvements in or relating to electrical frequency dividing circuit arrangements |
| US2692947A (en) * | 1951-05-11 | 1954-10-26 | Sperry Corp | Locator of inflection points of a response curve |
| US2838687A (en) * | 1955-08-09 | 1958-06-10 | Bell Telephone Labor Inc | Nonlinear resonant circuit devices |
| US2877359A (en) * | 1956-04-20 | 1959-03-10 | Bell Telephone Labor Inc | Semiconductor signal storage device |
| US2975377A (en) * | 1956-08-07 | 1961-03-14 | Ibm | Two-terminal semiconductor high frequency oscillator |
| US2986724A (en) * | 1959-05-27 | 1961-05-30 | Bell Telephone Labor Inc | Negative resistance oscillator |
-
0
- NL NL255389D patent/NL255389A/xx unknown
- NL NL127924D patent/NL127924C/xx active
-
1959
- 1959-08-31 US US837210A patent/US3339185A/en not_active Expired - Lifetime
-
1960
- 1960-08-05 GB GB27308/60A patent/GB951092A/en not_active Expired
- 1960-08-10 DE DER28525A patent/DE1151281B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3339185A (en) | 1967-08-29 |
| NL127924C (en:Method) | |
| DE1151281B (de) | 1963-07-11 |
| NL255389A (en:Method) |
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